Formosa MS PNP Epitaxial Planar Transistor FMBT3906 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Switching time equivalent test circuits................................................ 4 Rating and characteristic curves........................................................ 4~6 Pinning information........................................................................... 7 Marking........................................................................................... 7 Suggested solder pad layout............................................................. 7 Packing information.......................................................................... 8 Reel packing.................................................................................... 9 Suggested thermal profiles for soldering processes............................. 9 High reliability test capabilities.......................................................... 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 200mA Silicon PNP Epitaxial Planar Transistor Package outline .084(2.10) .068(1.70) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.051 (1.30) 0.003 (0.09) Mechanical data (B) 0.007 (0.18) • 0.110 (2.80) • • 0.120 (3.04) • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. As complementary type, the NPN transistor FMBT3904 is recommended Capable of 225mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" dinicates Halogen-free part, ex.FMBT3906-H. 0.012 (0.30) (BV CEO = -40V@I C=-1.0mA) • Small load switch transistor with high gain and low 0.020 (0.50) 0.045 (1.15) • High collector-emitterbreakdien voltage. 0.034 (0.85) SOT-23 Features 0.035 (0.89) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5.0 V IC -200 mA T = 25 C Total device dissipation FR-5 board A (1) Derate above 25 OC PD 225 mW PD 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW Derate above 25 C PD 2.4 mW/ OC Junction to ambient R θJA 417 Collector current O Junction to ambient O Total device dissipation alumina substrate(2) Thermal resistance T A = 25 C O Operating temperature Storage temperature TJ -55 +150 T STG -65 +150 O O C/W C/W o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 Characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Symbol MIN. Collector-Base breakdown voltage I C = -10uA, I E = 0 CONDITIONS V (BR)CBO -40 TYP. MAX. UNIT V Collector-Emitter breakdown voltage(3) I C = -1mA, I B = 0 V (BR)CEO -40 V Emitter-Base breakdown voltage I E = -10uA, I C = 0 V (BR)EBO -5.0 V Base cutoff current V CE = -30V, V EB = -3.0V I BL -50 Collector cutoff current V CE = -30V, V EB = -3.0V I CEX -50 nA On characteristics(3) PARAMETER CONDITIONS Symbol I c = -10mA, V CE = -1.0V Collector-Emitter saturation voltage(3) h FE 100 I c = -50mA, V CE = -1.0V 60 I c = -100mA, V CE = -1.0V 30 I c = -10mA, I B = -1.0mA TYP. 300 -0.25 V CE(sat) I c = -10mA, I B = -1.0mA - V -0.40 I c = -50mA, I B = -5.0mA Base-Emitter saturation voltage(3) MAX. UNIT 80 I c = -1.0mA, V CE = -1.0V DC current gain MIN. 60 I c = -0.1mA, V CE = -1.0V V BE(sat) -0.65 -0.85 V -0.95 I c = -50mA, I B = -5.0mA 3.Pulse test : pukse width < 300us, duty cycle < 2.0%. Small-signal characteristics PARAMETER CONDITIONS Current-gain-bandwidth product I C = -10mA, V CE = -20V, f = 100MHz Output capacitance V CB = -5.0V, I E = 0, f = 1.0MHz Input capacitance Symbol MIN. fT 250 TYP. MAX. UNIT MHz C obo 4.5 Vdc pF V EB = -0.5V, I C = 0, f = 1.0MHz C ibo 1.0 pF Input impedance V CE = -10V, I C = -1.0mA, f = 1.0KHz h ie 2.0 12 Vdc kohms Voltage feeback radio V CE = -10V, I C = -1.0mA, f = 1.0KHz h re 0.1 10.0 X 10 -4 Small-signal current gain V CE = -10V, I C = -1.0mA, f = 1.0KHz h fe 100 400 - 3.0 60 μmhos Output admittance V CE = -10V, I C = -1.0mA, f = 1.0KHz h oe Noise figure V CE = -5.0V, I C = -100uA, Rs = 1.0K ohms, f = 1.0KHZ NF 4.0 dB Switching characteristics PARAMETER CONDITIONS Delay time Rise time V CC = -3.0V, V BE = 0.5V, I C = -10mA, I B1 = -1.0mA Storage time Fall time V CC = -3.0V, I C =-10mA, I B1 = I B2 = -1.0mA Symbol MIN. TYP. MAX. UNIT td 35 tr 35 ts 225 tf 75 ns 5. Pulse Test: Pulse Width <=300µs, Duty cycle <= 2.0% http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Switching time equivalent test circuits +0.5V http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 NF, NOISE FIGURE ( dB ) NF, NOISE FIGURE ( dB ) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 5 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code 2A FMBT3906 M•F K3N Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 Reel packing PACKAGE SOT-23 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 9 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10 Formosa MS PNP Epitaxial Planar Transistor FMBT3906 High reliability test capabilities Item Test Conditions 1. Steady State Operating Life P D=225mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj= 150℃,V CE=80% related volage, 1000hrs 3. Temperature Cycle 4. Autoclave -55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs 5. High Temperature Storage Life Ta=150℃ Test Duration:1000hrs 6. Solderability 245℃,5sec 7. High Temperature High Humidity Reverse Bias Ta=85℃, 85%RH, V CE= 80% related volage,1000hrs 8. Resistance to Soldering Heat http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 260℃,10sec Document ID Page 10 DS-231113 Issued Date Revised Date Revision 2008/02/10 2011/07/21 E Page. 10