FORMOSA FMBT3906_11

Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Switching time equivalent test circuits................................................ 4
Rating and characteristic curves........................................................ 4~6
Pinning information........................................................................... 7
Marking........................................................................................... 7
Suggested solder pad layout............................................................. 7
Packing information.......................................................................... 8
Reel packing.................................................................................... 9
Suggested thermal profiles for soldering processes............................. 9
High reliability test capabilities.......................................................... 10
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
200mA Silicon PNP Epitaxial Planar
Transistor
Package outline
.084(2.10)
.068(1.70)
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.051 (1.30)
0.003 (0.09)
Mechanical data
(B)
0.007 (0.18)
•
0.110 (2.80)
•
•
0.120 (3.04)
•
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
As complementary type, the NPN transistor FMBT3904 is
recommended
Capable of 225mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" dinicates Halogen-free part, ex.FMBT3906-H.
0.012 (0.30)
(BV CEO = -40V@I C=-1.0mA)
• Small load switch transistor with high gain and low
0.020 (0.50)
0.045 (1.15)
• High collector-emitterbreakdien voltage.
0.034 (0.85)
SOT-23
Features
0.035 (0.89)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX. UNIT
Collector-Base voltage
V CBO
-40
V
Collector-Emitter voltage
V CEO
-40
V
Emitter-Base voltage
V EBO
-5.0
V
IC
-200
mA
T = 25 C
Total device dissipation FR-5 board A
(1)
Derate above 25 OC
PD
225
mW
PD
1.8
mW/ OC
Thermal resistance
R θJA
556
PD
300
mW
Derate above 25 C
PD
2.4
mW/ OC
Junction to ambient
R θJA
417
Collector current
O
Junction to ambient
O
Total device dissipation alumina
substrate(2)
Thermal resistance
T A = 25 C
O
Operating temperature
Storage temperature
TJ
-55
+150
T STG
-65
+150
O
O
C/W
C/W
o
C
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 2
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
Characteristics (AT T =25 C unless otherwise noted)
o
A
Off characteristics
PARAMETER
Symbol
MIN.
Collector-Base breakdown voltage
I C = -10uA, I E = 0
CONDITIONS
V (BR)CBO
-40
TYP.
MAX. UNIT
V
Collector-Emitter breakdown voltage(3)
I C = -1mA, I B = 0
V (BR)CEO
-40
V
Emitter-Base breakdown voltage
I E = -10uA, I C = 0
V (BR)EBO
-5.0
V
Base cutoff current
V CE = -30V, V EB = -3.0V
I BL
-50
Collector cutoff current
V CE = -30V, V EB = -3.0V
I CEX
-50
nA
On characteristics(3)
PARAMETER
CONDITIONS
Symbol
I c = -10mA, V CE = -1.0V
Collector-Emitter saturation voltage(3)
h FE
100
I c = -50mA, V CE = -1.0V
60
I c = -100mA, V CE = -1.0V
30
I c = -10mA, I B = -1.0mA
TYP.
300
-0.25
V CE(sat)
I c = -10mA, I B = -1.0mA
-
V
-0.40
I c = -50mA, I B = -5.0mA
Base-Emitter saturation voltage(3)
MAX. UNIT
80
I c = -1.0mA, V CE = -1.0V
DC current gain
MIN.
60
I c = -0.1mA, V CE = -1.0V
V BE(sat)
-0.65
-0.85
V
-0.95
I c = -50mA, I B = -5.0mA
3.Pulse test : pukse width < 300us, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Current-gain-bandwidth product
I C = -10mA, V CE = -20V, f = 100MHz
Output capacitance
V CB = -5.0V, I E = 0, f = 1.0MHz
Input capacitance
Symbol
MIN.
fT
250
TYP.
MAX. UNIT
MHz
C obo
4.5
Vdc
pF
V EB = -0.5V, I C = 0, f = 1.0MHz
C ibo
1.0
pF
Input impedance
V CE = -10V, I C = -1.0mA, f = 1.0KHz
h ie
2.0
12
Vdc
kohms
Voltage feeback radio
V CE = -10V, I C = -1.0mA, f = 1.0KHz
h re
0.1
10.0
X 10 -4
Small-signal current gain
V CE = -10V, I C = -1.0mA, f = 1.0KHz
h fe
100
400
-
3.0
60
μmhos
Output admittance
V CE = -10V, I C = -1.0mA, f = 1.0KHz
h oe
Noise figure
V CE = -5.0V, I C = -100uA, Rs = 1.0K ohms, f = 1.0KHZ
NF
4.0
dB
Switching characteristics
PARAMETER
CONDITIONS
Delay time
Rise time
V CC = -3.0V, V BE = 0.5V, I C = -10mA, I B1 = -1.0mA
Storage time
Fall time
V CC = -3.0V, I C =-10mA, I B1 = I B2 = -1.0mA
Symbol
MIN.
TYP.
MAX. UNIT
td
35
tr
35
ts
225
tf
75
ns
5. Pulse Test: Pulse Width <=300µs, Duty cycle <= 2.0%
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 3
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Switching time equivalent test circuits
+0.5V
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 4
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
NF, NOISE FIGURE ( dB )
NF, NOISE FIGURE ( dB )
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TEL:886-2-22696661
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Document ID
Page 5
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 6
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
Pinning information
Pin
Simplified outline
Symbol
C
PinB
PinC
PinE
C
Base
Collector
Emitter
B
E
B
E
Marking
Type number
Marking code
2A
FMBT3906
M•F
K3N
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 7
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 8
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
Reel packing
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3,000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
382*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 9
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10
Formosa MS
PNP Epitaxial Planar Transistor
FMBT3906
High reliability test capabilities
Item Test
Conditions
1. Steady State Operating Life
P D=225mW Test Duration:1000hrs
2. High Temperature Reverse Bias
Tj= 150℃,V CE=80% related volage, 1000hrs
3. Temperature Cycle
4. Autoclave
-55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle
P=2atm Ta=121℃ RH=100% Test Duration:96hrs
5. High Temperature Storage Life
Ta=150℃ Test Duration:1000hrs
6. Solderability
245℃,5sec
7. High Temperature High Humidity Reverse
Bias
Ta=85℃, 85%RH, V CE= 80% related volage,1000hrs
8. Resistance to Soldering Heat
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260℃,10sec
Document ID
Page 10
DS-231113
Issued Date
Revised Date
Revision
2008/02/10
2011/07/21
E
Page.
10