FDT86244 N-Channel Power Trench® MOSFET 150 V, 2.8 A, 128 mΩ Features General Description Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications Fast switching speed Load Switch 100% UIL Tested Primary Switch RoHS Compliant D D S D SOT-223 G G D S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2.8 12 Single Pulse Avalanche Energy EAS Ratings 150 (Note 3) 12 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 12 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86244 Device FDT86244 ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET May 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 104 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2.8 A 106 128 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.4 A 127 178 VGS = 10 V, ID = 2.8 A, TJ = 125 °C 196 237 VDS = 10 V, ID = 2.8 A 12 gFS Forward Transconductance 2.0 3.1 -10 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 295 395 pF 33 45 pF 2.4 5 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 5.3 11 1.3 10 ns 9.8 20 ns 2.4 10 ns 4.9 7 nC VDD = 75 V, ID = 2.8 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 2.8 4 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 2.8 A ns nC 1.4 nC 1.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.8 A IF = 2.8 A, di/dt = 100 A/μs (Note 2) 0.82 1.3 V 48 77 ns 44 70 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 2 www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 12 VGS = 6 V VGS = 10 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 9 VGS = 5.5 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V VGS = 5.5 V 3 VGS = 6 V 2 1 0 5 0 3 Figure 1. On Region Characteristics 9 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 500 ID = 2.8 A VGS = 10 V 2.2 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 SOURCE ON-RESISTANCE (mΩ) 2.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 400 300 200 TJ = 125 oC 100 TJ = 25 oC 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 9 TJ = 150 oC 6 TJ = 25 oC 3 TJ = -55 oC 0 3 4 5 6 6 7 8 9 20 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 7 VGS = 0 V 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 5 VGS, GATE TO SOURCE VOLTAGE (V) 12 2 ID = 2.8 A 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 1.2 www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 2.8 A VDD = 50 V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 4 5 1 8 6 6 5 = 25 oC TJ = 100 oC 2 TJ = 125 oC VGS = 10 V 4 VGS = 6 V 3 2 o RθJC = 12 C/W 1 1 0.01 0.1 0 25 1 50 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature Figure 9. Unclamped Inductive Switching Capability 500 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us 1 1 ms 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Figure 7. Gate Charge Characteristics TJ 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 4 Crss 1 0.1 THIS AREA IS LIMITED BY rDS(on) 0.01 0.005 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 118 oC/W 10 s TA = 25 oC 1 DC 10 100 10 SINGLE PULSE RθJA = 118 oC/W TA = 25 oC 1 -4 500 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 118 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 5 www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 ©2011 Fairchild Semiconductor Corporation FDT86244 Rev.C 6 www.fairchildsemi.com FDT86244 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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