FDMS8622 N-Channel Power Trench® MOSFET 100 V, 16.5 A, 56 mΩ Features General Description Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested POE Protection Switch Termination is Lead-free and RoHS Compliant DC-DC Switch Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 16.5 17 (Note 1a) -Pulsed 4.8 A 30 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 12 31 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 4 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8622 Device FDMS8622 ©2011 Fairchild Semiconductor Corporation FDMS8622 Rev.C Package Power56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8622 N-Channel PowerTrench® MOSFET July 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 4.8 A 45 56 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 3.9 A 62 88 VGS = 10 V, ID = 4.8 A, TJ = 125 °C 78 97 VDD = 5 V, ID = 4.8 A 9 gFS Forward Transconductance 2 3 -8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 301 400 pF 70 95 pF 3.6 5 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 4.8 A, VGS = 10 V, RGEN = 6 Ω VDD = 50 V, ID = 4.8 A 5.7 11 1.7 10 ns ns 10.2 18 ns 2.1 10 ns 5 7 nC 2.8 4 nC 1.4 2.8 nC 1.3 2.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.8 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 1.9 A (Note 2) 0.8 1.2 IF = 4.8 A, di/dt = 100 A/μs V 38 60 ns 30 48 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3.Starting TJ = 25 °C; N-ch: L = 0.1 mH, IAS = 16 A, VDD = 90 V, VGS = 10 V. FDMS8622 Rev.C 2 www.fairchildsemi.com FDMS8622 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 30 4 VGS = 7 V VGS = 8 V 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 20 VGS = 6 V 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 5 VGS = 5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 V 3 VGS = 7 V 2 VGS = 8 V 1 0 3.5 0 5 10 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 250 ID = 4.8 A VGS = 10 V -25 35 ID = 4.8 A TJ = 125 oC 100 50 TJ = 25 oC 0 100 125 150 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 150 Figure 3. Normalized On Resistance vs Junction Temperature 25 25 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 200 TJ, JUNCTION TEMPERATURE (oC) 30 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 -50 15 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 0.6 -75 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 VGS = 6 V VDS = 5 V 20 15 TJ = 150 oC 10 TJ = 25 oC 5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC TJ = -55 oC 0 2 3 4 5 6 7 8 0.001 0.2 9 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS8622 Rev.C 3 1.2 www.fairchildsemi.com FDMS8622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 ID = 4.8 A VDD = 25 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Ciss 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 1 Figure 7. Gate Charge Characteristics 5 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 8 6 TJ = 25 oC 4 TJ = 100 oC 2 4 3 VGS = 6 V 2 1 o RθJA = 50 C/W TJ = 125 oC 1 0.01 0.1 1 0 25 10 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 100 us THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 100 ms 10 ms 1s RθJA = 125 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 500 SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.1 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS8622 Rev.C 100 Figure 8. Capacitance vs Drain to Source Voltage 10 0.1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 Crss 1 0.1 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS8622 Rev.C 5 www.fairchildsemi.com FDMS8622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS8622 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS8622 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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