TC1501N REV4_20070502 1W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 40 dBm Typical at 6 GHz ! High Power Added Efficiency: Nominal PAE of 43% at 6 GHz ! Non-Via Hole Source for Self-Bias Application ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 2.4 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1501N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed without via-holes for self-bias applications. The short gate length characteristic enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain, f MIN = 6 GHz VDS = 8 V, IDS = 240 mA UNIT 30 dBm 12 dB rd 40 dBm Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 240 mA,*PSCL = 17 dBm PAE Power Added Efficiency at 1dB Compression Power, f IDSS gm VP Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA = 6 GHz 43 % Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 600 mA Transconductance at VDS = 2 V, VGS = 0 V 400 mS -1.7** Volts 18 Volts 15 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =1.2 mA Rth MAX = 6 GHz VDS = 8 V, IDS = 240 mA IP3 29.5 TYP 15 Thermal Resistance Note: * PSCL: Output Power of Single Carrier Level. * For the tight control of the pinch-off voltage . TC1501N’s are divided into 3 groups: (1)TC1501NP1519 : Vp = -1.5V to -1.9V (2) TC1501NP1620 : Vp = -1.6V to -2.0V (3)TC1501NP1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 TC1501N REV4_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol Parameter Rating VDS VGS IDS Pin PT TCH TSTG Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature 12 V -5 V IDSS 28 dBm 3.8 W 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 600± 12 D Units: Micrometers D Chip Thickness: 50 Gate Pad: 79 x 59.5 470± 12 Drain Pad: 86.0 x 76.0 Source Pad: 80 x 86 S G S G S CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 240 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/4 TC1501N 75 45 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 60 2. 0 0.2 0.4 90 0.8 6 0. 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 0 12 Mag Max 0.1 Swp Max 18GHz 105 1.0 REV4_20070502 0 -180 -15 -10.0 -105 -1 20 1.0 0 Swp Max 18GHz 2. 6 0. Swp Min 2 GHz 3. S22 0.2 15 0 0 4. 0 5. 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.2 0 0 0.6 10.0 165 0.4 60 75 45 4 0 0.8 -1 35 .0 -2 -1.0 -0.8 -0 .6 0 5 30 0. 90 Swp Max 18 GHz 13 15 -3 0 0 -6 0.01 Per Div -75 Swp Min 2GHz -90 105 12 Mag Max 6 S12 50 -1 5 -4 .4 -0 -165 -3 . -4 0 -5..0 0 2 -0. -180 -15 S21 ANG -147.25 -158.90 -165.26 -169.41 -172.46 -174.86 -176.88 -178.64 179.77 178.31 176.94 175.63 174.38 173.18 172.00 170.86 169.74 MAG 5.2262 3.5426 2.6620 2.1223 1.7577 1.4947 1.2959 1.1403 1.0153 0.9127 0.8269 0.7542 0.6918 0.6377 0.5903 0.5485 0.5113 .0 -2 .6 Swp Min 2 GHz S11 MAG 0.8590 0.8534 0.8524 0.8529 0.8541 0.8558 0.8577 0.8597 0.8618 0.8638 0.8658 0.8677 0.8695 0.8712 0.8728 0.8743 0.8757 .4 -0 -105 0 -1 20 -1 5 35 -4 -0 -6 -75 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -90 2 Per Div 2 -1.0 50 -0. 0 -0.8 -3 Swp Min 2GHz S12 ANG 94.57 84.03 76.08 69.32 63.27 57.72 52.59 47.83 43.40 39.29 35.47 31.93 28.67 25.67 22.91 20.39 18.11 MAG 0.0559 0.0568 0.0569 0.0570 0.0571 0.0575 0.0583 0.0595 0.0613 0.0636 0.0663 0.0696 0.0733 0.0773 0.0817 0.0864 0.0912 -3 .0 -4 -5..0 0 -1 S21 -10.0 -165 S22 ANG 21.04 18.84 19.35 21.16 23.76 26.90 30.37 34.03 37.71 41.27 44.62 47.68 50.41 52.81 54.89 56.65 58.13 MAG 0.3393 0.3577 0.3819 0.4095 0.4390 0.4691 0.4988 0.5276 0.5550 0.5809 0.6050 0.6275 0.6483 0.6674 0.6850 0.7012 0.7161 ANG -135.53 -141.51 -143.44 -144.26 -144.88 -145.59 -146.47 -147.50 -148.66 -149.92 -151.24 -152.59 -153.96 -155.33 -156.69 -158.02 -159.34 * The data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, VDS = 8 V, IDS = 240 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/4 TC1501N REV4_20070502 SCHEMATI Lg PARAMETERS Cgd Rg Rd Lg Ld 0.0377 nH Rs 0.965 Ohm Rg 0.69 Ohm Ls 0.0254 nH Cgs 3.6 pF Cds 0.439 pF Ri 1.18 Ohm Rds 73.1 Ohm Gm Cgs Cds Ri Rds T Rs Cgd 0.213 pF Rd 0.937 Ohm Gm 407.7 mS Ld 0.008 nH T 3.9 psec Ls LARGE SIGNAL MODEL, VDS = 8 V, IDS = 240 mA SCHEMATI Lg Rg TOM2 MODEL PARAMETERS Cgd Rid Rd Cgs Rdb Id Ris Cds Cbs Rs Ld VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA -2.364 10.67 0.543 0.0195 0.0848 0.83 0.1 0.01 3.9 1.071 0.92 0.965 1E-11 1 1 V VMAX CGD CGS CDS RIS RID VBR RDB ps CBS Ohm TNOM Ohm LS Ohm LG mA LD AFAC V NFING 0.5 0.213 6.712 0.444 1.288 0.0001 15 54.633 14.433 25 0.0254 0.0377 0.0078 1 1 V pF pF pF Ohm Ohm V Ohm pF °C nH nH nH 0.2 V Ls TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/4