TRANSCOM TC1401N

TC1401N
REV5_20070502
0.5 W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 0.5W Typical Power at 12 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: GL = 9 dB Typical at 12 GHz
! High Linearity: IP3 = 37 dBm Typical at 12 GHz
! High Power Added Efficiency (PAE): 40%
! No Via holes in the source pads
! Non-Via Hole Source for Self-Bias Application
! Breakdown Voltage: BVDGO ≥ 15 V
! Lg = 0.35 µm, Wg = 1.2 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity
and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length
characteristic enables the device to be used in a circuit up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Backside gold plating is compatible with standard AuSn die-attach.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
P1dB
Output Power at 1dB Gain Compression Point , f
GL
Linear Power Gain, f
= 12GHz,VDS = 8 V, IDS = 120 mA
TYP
26.5
27
dBm
9
dB
37
dBm
= 12GHz,VDS = 8 V, IDS = 120 mA
rd
IP3
Intercept Point of the 3 -order Intermodulation, f = 12GHz,VDS = 8 V, IDS = 120 mA, PSCL = 14 dBm
PAE
Power Added Efficiency at 1dB Compression Power, f
IDSS
gm
VP
Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA
= 12GHz
MAX
UNIT
40
%
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
300
mA
Transconductance at VDS = 2 V, VGS = 0 V
200
mS
BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA
Rth
MIN
Thermal Resistance
15
-1.7*
Volts
18
Volts
30
°C/W
Note: * For the tight control of the pinch-off voltage . TC1401N’s are divided into 3 groups:
(1)TC1401NP0710 : Vp = -1.5V to -1.9V (2) TC1401NP0811 : Vp = -1.6V to -2.0V
(3)TC1401NP0912 : Vp = -1.7V to -2.1V
In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/5
TC1401N
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
PT
Continuous Dissipation
1.9 W
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
26 dBm
CHIP DIMENSIONS
380± 12
D
Units: Micrometers
Chip Thickness: 76
470± 12
Gate Pad: 59.5 x 76.0
Drain Pad: 86.0 x 76.0
Source Pad: 80 x 86
S
G
S
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/5
TC1401N
REV5_20070502
45
60
30
15
0
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
75
2.
0
0.2
0.4
90
0.8
0.
4
0.2
Swp Max
18 GHz
5
13
0
3.
0
4. 0
.
5
S11
10.0
0
Mag Max
0.08
0
12
6
0.
Swp Max
18GHz
105
1.0
TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 120 mA
15
165
0
-180
-105
1.0
0.8
Swp Max
18GHz
2.
0
0.
6
-1
20
-1
35
0.
3.0
4.0
5.0
2.0
0.8
1.0
0.6
0.4
10.0
0
0
0
3.
0
4. 0
5.
S22
0.2
15
165
0.2
.0
-2
45
60
75
-1.0
90
-0.8
Swp Min
2 GHz
4
-0
.6
-3
.0
4
.
-5. 0
0
5
13
30
15
0
-3
0
0
-6
Swp Max
18 GHz
0.02
Per Div
-75
Swp Min
2GHz
-90
105
0
12
Mag Max
8
S12
50
-1
5
-4
.4
-0
-15
-165
10.0
-10.0
2
-0.
-180
-15
.4
Swp Min
2 GHz
.0
-2
-1.0
.6
-0
-0
-105
-1
20
5
-4
-75
-90
2
Per Div
0
-6
-1
35
50
-1
2
-0.
-0.8
-3
0
-3
.0
4
-5..0
0
S21
-10.0
-165
Swp Min
2GHz
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
3/5
TC1401N
REV5_20070502
FREQUENCY
(GHz)
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S11
MAG
0.99964
0.99882
0.99558
0.99043
0.9837
0.97577
0.96704
0.095787
0.94857
0.9394
0.93053
0.92209
0.91415
0.90675
0.89991
0.8936
0.88782
0.88252
0.87769
0.87327
0.86924
0.8443
0.8331
0.8275
0.8246
0.8230
0.8223
0.8219
0.8219
0.8221
0.8225
0.8230
0.8235
0.8241
0.8248
0.8255
0.8262
S21
ANG
-4.2777
-8.5437
-16.995
-25.266
-33.283
-40.984
-48.326
-55.281
-61.834
-67.983
-73.736
-79.105
-84.111
-88.773
-93.114
-97.158
-100.93
-104.44
-107.72
-110.79
-113.65
-134.51
-146.95
-155.30
-161.41
-166.18
-170.09
-173.42
-176.33
-178.93
178.69
176.50
174.44
172.50
170.66
168.89
167.19
MAG
13.028
12.996
12.869
12.667
12.398
12.077
11.716
11.328
10.925
10.516
10.109
9.7093
9.3213
8.9478
8.5905
8.2502
7.9273
7.6216
7.3328
7.06
6.8027
4.9090
3.7809
3.0502
2.5422
2.1696
1.8850
1.6608
1.4797
1.3306
1.2058
1.0998
1.0089
0.9300
0.8610
0.8000
0.7459
ANG
177.44
174.88
169.82
164.88
160.1
155.53
151.17
147.06
143.19
139.57
136.17
133.01
130.05
127.28
124.7
122.27
120
117.87
115.85
113.96
112.16
95.78
85.19
76.63
69.22
62.57
56.46
50.77
45.43
40.38
35.60
31.06
26.72
22.59
18.64
14.85
11.22
S12
MAG
0.0022273
0.0044437
0.0088014
0.012995
0.016962
0.020656
0.024051
0.027136
0.029916
0.032405
0.034622
0.036592
0.038338
0.039885
0.041256
0.042472
0.043552
0.044514
0.045372
0.046139
0.046827
0.0510
0.0529
0.0540
0.0548
0.0555
0.0563
0.0570
0.0579
0.0589
0.0599
0.0611
0.0624
0.0637
0.0652
0.0668
0.0684
S22
ANG
87.743
85.527
81.129
76.844
72.722
68.799
65.101
61.642
58.429
55.458
52.721
50.207
47.901
45.79
43.857
42.088
40.468
38.984
37.624
36.377
35.232
27.71
24.33
22.90
22.52
22.76
23.40
24.28
25.32
26.46
27.64
28.84
30.02
31.16
32.25
33.29
34.26
MAG
0.50265
0.50175
0.49822
0.49259
0.48518
0.47639
0.46664
0.45632
0.44577
0.43528
0.42507
0.41531
0.40611
0.39753
0.38962
0.38239
0.37583
0.36992
0.36464
0.35995
0.35582
0.3300
0.3361
0.3547
0.3792
0.4062
0.4341
0.4616
0.4883
0.5138
0.5378
0.5603
0.5813
0.6009
0.6190
0.6358
0.6513
ANG
-2.2399
-4.4726
-8.888
-13.194
-17.345
-21.308
-25.059
-28.587
-31.888
-34.967
-37.833
-40.499
-42.979
-45.289
-47.444
-49.46
-51.35
-53.128
-54.805
-56.392
-57.898
-69.91
-78.66
-85.87
-92.09
-97.60
-102.55
-107.05
-111.17
-114.97
-118.49
-121.76
-124.81
-127.67
-130.34
-132.86
-135.23
* The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
4/5
TC1401N
REV5_20070502
SMALL SIGNAL MODEL, VDS = 8 V, IDS = 120 mA
SCHEMATI
Lg
PARAMETERS
Cgd
Rg
Rd
Lg
Gm
Cgs
Cds
Ri
Ld
Rds
Rg
1.27 Ohm
Cgs
Ri
T
Rs
0.071 nH
Rs
Ls
0.013 nH
2.36 pF
Cds
0.297 pF
2.01 Ohm
Rds
103.7 Ohm
1.75 Ohm
Cgd
0.069 pF
Rd
Gm
253 mS
Ld
T
1.68 Ohm
0.013 nH
3.9 psec
Ls
LARGE SIGNAL MODEL, VDS = 8 V, IDS = 120 mA
SCHEMATI
Lg
Rg
TOM2 MODEL PARAMETERS
Cgd
Rd
Rid
Cgs
Rdb
Id
Ris
Cds
Cbs
Rs
Ls
Ld
VTO
ALPHA
BETA
GAMMA
DELTA
Q
NG
ND
TAU
RG
RD
RS
IS
N
VBI
VDELTA
-1.812
14.13
0.354
0.0228
0.1565
0.88
0.1
0.01
3.9
1.2733
1.32
1.675
1E-11
1
1
0.2
V
VMAX
CGD
CGS
CDS
RIS
RID
VBR
RDB
ps
CBS
Ohm TNOM
Ohm LS
Ohm LG
mA LD
AFAC
V
NFING
V
0.5
0.0691
3.9867
0.278
2.005
0.0001
15
119.667
4.7433
25
0.0131
0.0715
0.013
1
1
V
pF
pF
pF
Ohm
Ohm
V
Ohm
pF
°C
nH
nH
nH
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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