TC1401N REV5_20070502 0.5 W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 0.5W Typical Power at 12 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 9 dB Typical at 12 GHz ! High Linearity: IP3 = 37 dBm Typical at 12 GHz ! High Power Added Efficiency (PAE): 40% ! No Via holes in the source pads ! Non-Via Hole Source for Self-Bias Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 1.2 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length characteristic enables the device to be used in a circuit up to 20GHz. All devices are 100% DC tested to assure consistent quality. Backside gold plating is compatible with standard AuSn die-attach. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain, f = 12GHz,VDS = 8 V, IDS = 120 mA TYP 26.5 27 dBm 9 dB 37 dBm = 12GHz,VDS = 8 V, IDS = 120 mA rd IP3 Intercept Point of the 3 -order Intermodulation, f = 12GHz,VDS = 8 V, IDS = 120 mA, PSCL = 14 dBm PAE Power Added Efficiency at 1dB Compression Power, f IDSS gm VP Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA = 12GHz MAX UNIT 40 % Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 300 mA Transconductance at VDS = 2 V, VGS = 0 V 200 mS BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA Rth MIN Thermal Resistance 15 -1.7* Volts 18 Volts 30 °C/W Note: * For the tight control of the pinch-off voltage . TC1401N’s are divided into 3 groups: (1)TC1401NP0710 : Vp = -1.5V to -1.9V (2) TC1401NP0811 : Vp = -1.6V to -2.0V (3)TC1401NP0912 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/5 TC1401N REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol Parameter Rating VDS Drain-Source Voltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current IDSS Pin RF Input Power, CW PT Continuous Dissipation 1.9 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C 26 dBm CHIP DIMENSIONS 380± 12 D Units: Micrometers Chip Thickness: 76 470± 12 Gate Pad: 59.5 x 76.0 Drain Pad: 86.0 x 76.0 Source Pad: 80 x 86 S G S TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/5 TC1401N REV5_20070502 45 60 30 15 0 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 75 2. 0 0.2 0.4 90 0.8 0. 4 0.2 Swp Max 18 GHz 5 13 0 3. 0 4. 0 . 5 S11 10.0 0 Mag Max 0.08 0 12 6 0. Swp Max 18GHz 105 1.0 TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 120 mA 15 165 0 -180 -105 1.0 0.8 Swp Max 18GHz 2. 0 0. 6 -1 20 -1 35 0. 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 10.0 0 0 0 3. 0 4. 0 5. S22 0.2 15 165 0.2 .0 -2 45 60 75 -1.0 90 -0.8 Swp Min 2 GHz 4 -0 .6 -3 .0 4 . -5. 0 0 5 13 30 15 0 -3 0 0 -6 Swp Max 18 GHz 0.02 Per Div -75 Swp Min 2GHz -90 105 0 12 Mag Max 8 S12 50 -1 5 -4 .4 -0 -15 -165 10.0 -10.0 2 -0. -180 -15 .4 Swp Min 2 GHz .0 -2 -1.0 .6 -0 -0 -105 -1 20 5 -4 -75 -90 2 Per Div 0 -6 -1 35 50 -1 2 -0. -0.8 -3 0 -3 .0 4 -5..0 0 S21 -10.0 -165 Swp Min 2GHz TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/5 TC1401N REV5_20070502 FREQUENCY (GHz) 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.99964 0.99882 0.99558 0.99043 0.9837 0.97577 0.96704 0.095787 0.94857 0.9394 0.93053 0.92209 0.91415 0.90675 0.89991 0.8936 0.88782 0.88252 0.87769 0.87327 0.86924 0.8443 0.8331 0.8275 0.8246 0.8230 0.8223 0.8219 0.8219 0.8221 0.8225 0.8230 0.8235 0.8241 0.8248 0.8255 0.8262 S21 ANG -4.2777 -8.5437 -16.995 -25.266 -33.283 -40.984 -48.326 -55.281 -61.834 -67.983 -73.736 -79.105 -84.111 -88.773 -93.114 -97.158 -100.93 -104.44 -107.72 -110.79 -113.65 -134.51 -146.95 -155.30 -161.41 -166.18 -170.09 -173.42 -176.33 -178.93 178.69 176.50 174.44 172.50 170.66 168.89 167.19 MAG 13.028 12.996 12.869 12.667 12.398 12.077 11.716 11.328 10.925 10.516 10.109 9.7093 9.3213 8.9478 8.5905 8.2502 7.9273 7.6216 7.3328 7.06 6.8027 4.9090 3.7809 3.0502 2.5422 2.1696 1.8850 1.6608 1.4797 1.3306 1.2058 1.0998 1.0089 0.9300 0.8610 0.8000 0.7459 ANG 177.44 174.88 169.82 164.88 160.1 155.53 151.17 147.06 143.19 139.57 136.17 133.01 130.05 127.28 124.7 122.27 120 117.87 115.85 113.96 112.16 95.78 85.19 76.63 69.22 62.57 56.46 50.77 45.43 40.38 35.60 31.06 26.72 22.59 18.64 14.85 11.22 S12 MAG 0.0022273 0.0044437 0.0088014 0.012995 0.016962 0.020656 0.024051 0.027136 0.029916 0.032405 0.034622 0.036592 0.038338 0.039885 0.041256 0.042472 0.043552 0.044514 0.045372 0.046139 0.046827 0.0510 0.0529 0.0540 0.0548 0.0555 0.0563 0.0570 0.0579 0.0589 0.0599 0.0611 0.0624 0.0637 0.0652 0.0668 0.0684 S22 ANG 87.743 85.527 81.129 76.844 72.722 68.799 65.101 61.642 58.429 55.458 52.721 50.207 47.901 45.79 43.857 42.088 40.468 38.984 37.624 36.377 35.232 27.71 24.33 22.90 22.52 22.76 23.40 24.28 25.32 26.46 27.64 28.84 30.02 31.16 32.25 33.29 34.26 MAG 0.50265 0.50175 0.49822 0.49259 0.48518 0.47639 0.46664 0.45632 0.44577 0.43528 0.42507 0.41531 0.40611 0.39753 0.38962 0.38239 0.37583 0.36992 0.36464 0.35995 0.35582 0.3300 0.3361 0.3547 0.3792 0.4062 0.4341 0.4616 0.4883 0.5138 0.5378 0.5603 0.5813 0.6009 0.6190 0.6358 0.6513 ANG -2.2399 -4.4726 -8.888 -13.194 -17.345 -21.308 -25.059 -28.587 -31.888 -34.967 -37.833 -40.499 -42.979 -45.289 -47.444 -49.46 -51.35 -53.128 -54.805 -56.392 -57.898 -69.91 -78.66 -85.87 -92.09 -97.60 -102.55 -107.05 -111.17 -114.97 -118.49 -121.76 -124.81 -127.67 -130.34 -132.86 -135.23 * The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/5 TC1401N REV5_20070502 SMALL SIGNAL MODEL, VDS = 8 V, IDS = 120 mA SCHEMATI Lg PARAMETERS Cgd Rg Rd Lg Gm Cgs Cds Ri Ld Rds Rg 1.27 Ohm Cgs Ri T Rs 0.071 nH Rs Ls 0.013 nH 2.36 pF Cds 0.297 pF 2.01 Ohm Rds 103.7 Ohm 1.75 Ohm Cgd 0.069 pF Rd Gm 253 mS Ld T 1.68 Ohm 0.013 nH 3.9 psec Ls LARGE SIGNAL MODEL, VDS = 8 V, IDS = 120 mA SCHEMATI Lg Rg TOM2 MODEL PARAMETERS Cgd Rd Rid Cgs Rdb Id Ris Cds Cbs Rs Ls Ld VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA -1.812 14.13 0.354 0.0228 0.1565 0.88 0.1 0.01 3.9 1.2733 1.32 1.675 1E-11 1 1 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB ps CBS Ohm TNOM Ohm LS Ohm LG mA LD AFAC V NFING V 0.5 0.0691 3.9867 0.278 2.005 0.0001 15 119.667 4.7433 25 0.0131 0.0715 0.013 1 1 V pF pF pF Ohm Ohm V Ohm pF °C nH nH nH CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5/5