CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17304Q3 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3-mm × 3.3-mm Plastic Package The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View 8 D S 2 7 D S D G 5 4 5.1 nC Qgd Gate Charge Gate to Drain Drain to Source On Resistance 1.1 nC VGS = 3V 9.8 mΩ VGS = 4.5V 6.9 mΩ VGS = 8V 5.9 mΩ Threshold Voltage 1.3 V Device Package Media CSD17304Q3 SON 3.3-mm × 3.3-mm Plastic Package 13-Inch Reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 56 A Continuous Drain Current(1) 15 A IDM Pulsed Drain Current, TA = 25°C(2) 88 A PD Power Dissipation(1) 2.7 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 42A, L = 0.1mH, RG = 25Ω 88 mJ ID (1) Typical RqJA = 46°C/W on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% D 6 3 V Gate Charge Total (4.5V) ORDERING INFORMATION DESCRIPTION 1 30 Qg VGS(th) Notebook Point of Load Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems S Drain to Source Voltage RDS(on) APPLICATIONS • • VDS D P0095-01 Text 4 Spacing RDS(on) vs VGS Text 4 Spacing GATE CHARGE 8 ID = 17A 18 VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 20 16 14 T C = 125°C 12 10 8 6 4 T C = 25°C 2 ID = 17A VDS = 15V 7 6 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 0 2 4 6 Qg - Gate Charge - nC 8 10 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CSD17304Q3 SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10 / –8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 30 0.9 V 1 mA 100 nA 1.3 1.8 V VGS = 3V, ID = 17A 9.8 12.6 mΩ VGS = 4.5V, ID = 17A 6.9 8.8 mΩ VGS = 8V, ID = 17A 5.9 7.5 mΩ VDS = 15V, ID = 17A 48 S Dynamic Characteristics CISS Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz 735 955 pF COSS Output Capacitance 390 505 pF CRSS Reverse Transfer Capacitance 29 38 pF Rg Series Gate Resistance 1.1 2.2 Ω Qg Gate Charge Total (4.5V) 5.1 6.6 nC Qgd Gate Charge Gate to Drain 1.1 nC Qgs Gate Charge Gate to Source 1.8 nC Qg(th) Gate Charge at Vth 0.9 nC QOSS Output Charge 9.9 nC td(on) Turn On Delay Time 5.1 ns tr Rise Time 9.1 ns td(off) Turn Off Delay Time 10.4 ns tf Fall Time 3.1 ns VDS = 15V, ID = 17A VDS = 13V, VGS = 0V VDS = 15V, VGS = 4.5V, ID = 17A , RG = 2Ω Diode Characteristics VSD Diode Forward Voltage IDS = 17A, VGS = 0V 0.85 Qrr Reverse Recovery Charge 14.5 nC trr Reverse Recovery Time VDD = 13V, IF = 17A, di/dt = 300A/ms 1 V 17.3 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RqJC Thermal Resistance Junction to Case (1) PARAMETER 3.9 °C/W RqJA Thermal Resistance Junction to Ambient (1) (2) 57 °C/W (1) (2) 2 MIN TYP RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 GATE GATE Source Source Max RqJA = 57°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Max RqJA = 158°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0161-02 M0161-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA - Normalized Thermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.01 0.02 0.01 t1 t2 Single Pulse 0.001 0.001 0.01 Typical RqJA = 126°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA 0.1 1 tp - Pulse Duration - s 10 100 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 3 CSD17304Q3 SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 50 45 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A 50 VGS = 2.5V 40 VGS = 8V 35 30 25 VGS = 4.5V 20 VGS = 3.5V 15 10 VGS = 3V VDS = 5V 45 40 35 30 T C = 125°C 25 20 T C = 25°C 15 T C = -55°C 10 5 5 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage - V 0 2 0.5 Figure 2. Saturation Characteristics 7 G002 f = 1MHz VGS = 0V 1.8 1.6 C - Capacitance - nF 6 5 4 3 2 1.4 Coss = Cds + Cgd 1.2 Ciss = Cgd + Cgs 1 0.8 0.6 0.4 1 Crss = Cgd 0.2 0 0 2 4 6 Qg - Gate Charge - nC 8 10 0 5 10 15 20 VDS - Drain-to-Source Voltage - V G003 Figure 4. Gate Charge 30 G004 20 RDS(on) - On-State Resistance - mΩ ID = 250µA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -75 25 Figure 5. Capacitance 1.6 VGS(th) - Threshold Voltage - V 3.5 2 ID = 17A VDS = 15V 0 ID = 17A 18 16 14 T C = 125°C 12 10 8 6 4 T C = 25°C 2 0 -25 25 75 T C - Case Temperature - °C 125 175 0 1 G005 Figure 6. Threshold Voltage vs. Temperature 4 3 Figure 3. Transfer Characteristics 8 VGS - Gate-to-Source Voltage - V 1 1.5 2 2.5 VGS - Gate-to-Source Voltage - V G001 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 100 ID = 17A VGS = 8V 1.4 ISD - Source-to-Drain Current - A Normalized On-State Resistance 1.6 1.2 1 0.8 0.6 0.4 0.2 -75 10 1 T C = 125°C 0.1 T C = 25°C 0.01 0.001 0.0001 -25 25 75 T C - Case Temperature - °C 125 0 175 Figure 8. Normalized On-State Resistance vs. Temperature I(AV) - Peak Avalanche Current - A IDS - Drain-to-Source Current - A 1 1.2 G008 1k 100 1ms 10 10ms 1 11110 100ms Area Limited by RDS(on) 0.01 0.01 0.4 0.6 0.8 VSD - Source-to-Drain Voltage - V Figure 9. Typical Diode Forward Voltage 1k 0.1 0.2 G007 1s Single Pulse Typical R θJA = 126°C/W (min Cu) DC 0.1 1 10 VDS - Drain-to-Source Voltage - V 100 100 T C = 25°C 10 T C = 125°C 1 0.01 0.1 1 10 t(AV) - Time in Avalanche - ms G009 Figure 10. Maximum Safe Operating Area 100 G010 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current - A 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 T C - Case Temperature - °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 5 CSD17304Q3 SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA Q3 Package Dimensions D2 D H L 1 2 7 3 6 4 5 5 4 3 b E2 E 6 e E 7 2 8 8 1 q L1 Top View A1 Bottom View A Side View c D Front View M0142-01 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D1 – – – – – – D2 1.650 1.750 1.800 0.065 0.069 0.071 E 3.200 3.300 3.400 0.126 0.130 0.134 E1 – – – – – – E2 2.350 2.450 2.550 0.093 0.096 0.100 e 6 INCHES 0.650 TYP 0.026 H 0.35 0.450 0.550 0.014 0.018 0.022 L 0.35 0.450 0.550 0.014 0.018 0.022 L1 – – – – – – q – – – – – – Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 2.31 1 8 8 1 0.65 Typ. 2.45 5 4 5 3.50 0.56 0.41 4 0.50 Typ. Recommended PCB Pattern 0.63 M0143-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 1.75 ±0.10 Q3 Tape and Reel Information 4.00 ±0.10 (See Note 1) 2.00 ±0.05 Ø 1.50 +0.10 –0.00 3.60 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 M0144-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and convection) PbF reflow compatible Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 7 CSD17304Q3 SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (February 2010) to Revision A • 8 Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17304Q3 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD17304Q3 Package Package Pins Type Drawing SON DQG 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 3.6 B0 (mm) K0 (mm) P1 (mm) 3.6 1.2 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD17304Q3 SON DQG 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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