CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16414Q5 FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5mm × 6mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain • V nC 4.4 RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC VGS = 4.5V 2.1 mΩ VGS = 10V 1.5 mΩ 1.6 V ORDERING INFORMATION Device Package Media CSD16414Q5 SON 5 × 6 Plastic Package 13-inch reel APPLICATIONS • 25 16.6 Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S 1 8 D S 2 7 D S 3 6 D G 4 5 D Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 34 A IDM Pulsed Drain Current, TA = 25°C(2) 213 A PD Power Dissipation(1) 3.2 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 100A, L = 0.1mH, RG = 25Ω 500 mJ ID (1) RqJA = 39°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2%" D P0094-01 RDS(ON) vs VGS Gate Charge 12 ID = 30A VDS = 12.5V ID = 30A 5 10 4 VG − Gate Voltage − V RDS(on) − On-State Resistance − mΩ 6 TC = 125°C 3 2 1 8 6 4 2 TC = 25°C 0 0 0 2 4 6 8 VGS − Gate to Source Voltage − V 10 12 G006 0 5 10 15 20 25 30 35 40 Qg − Gate Charge − nC G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD16414Q5 SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 www.ti.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +16/–12V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 25 V 1 mA 100 nA 1.6 2 V VGS = 4.5V, ID = 30A 2.1 2.6 mΩ VGS = 10V, ID = 30A 1.5 1.9 mΩ VDS = 15V, ID = 30A 138 1.3 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 140 180 Rg Series Gate Resistance 1.4 2.8 Ω Qg Gate Charge Total (4.5V) 16.6 21 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 12.5V, f = 1MHz VDS = 12.5V, ID = 30A VDS = 13.5V, VGS = 0V VDS = 12.5V, VGS = 4.5V, ID = 30A RG = 2Ω 2810 3650 pF 2040 2650 pF pF 4.4 nC 7.3 nC 4.5 nC 40 nC 15 ns 24 ns 18.4 ns 11.1 ns Diode Characteristics VSD Diode Forward Voltage IS = 30A, VGS = 0V Qrr Reverse Recovery Charge Vdd = 13.5V, IF = 30A, di/dt = 300A/ms 0.81 44 1 nC V trr Reverse Recovery Time Vdd = 13.5V, IF = 30A, di/dt = 300A/ms 35 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJC Thermal Resistance Junction to Case (1) R qJA Thermal Resistance Junction to Ambient (1) (1) (2) 2 (2) MIN TYP MAX UNIT 1.1 °C/W 50 °C/W R qJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R qJC is specified by design while R qJA is determined by the user’s board design. Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu. Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 GATE GATE Source Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RqJA = 50°C/W when mounted on 1inch2 of 2 oz. Cu. Max RqJA = 122°C/W when mounted on minimum pad area of 2 oz. Cu. DRAIN DRAIN M0137-02 M0137-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – Normalized Thermal Impedance 10 1 0.5 0.3 0.1 0.01 0.1 0.05 Duty Cycle = t1/t2 0.02 0.01 P t1 Single Pulse t2 0.001 0.0001 0.001 RqJA = 96°C/W (max Cu) TJ = P ´ ZqJA ´ RqJA 0.01 0.1 1 10 100 1000 10k tp – Pulse Duration – s Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 3 CSD16414Q5 SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 100 100 90 80 ID − Drain Current − A 80 ID − Drain Current − A VDS = 5V 90 VGS = 10V VGS = 4.5V 70 60 50 VGS = 3V VGS = 3.5V 40 30 VGS = 2.5V 20 70 60 TC = 125°C 50 40 TC = 25°C 30 20 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain to Source Voltage − V TC = −55°C 0 1.5 2.0 G001 Figure 2. Saturation Characteristics G002 f = 1MHz VGS = 0V 6 C − Capacitance − nF VG − Gate Voltage − V 3.5 7 ID = 30A VDS = 12.5V 10 8 6 4 2 5 COSS = CDS + CGD 4 CISS = CGD + CGS 3 2 CRSS = CGD 1 0 0 0 5 10 15 20 25 30 35 40 Qg − Gate Charge − nC 0 5 G003 15 20 25 G004 Figure 5. Capacitance 2.0 RDS(on) − On-State Resistance − mΩ 6 ID = 250µA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 10 VDS − Drain to Source Voltage − V Figure 4. Gate Charge VGS(th) − Threshold Voltage − V 3.0 Figure 3. Transfer Characteristics 12 ID = 30A 5 4 TC = 125°C 3 2 1 TC = 25°C 0 −25 25 75 125 175 TC − Case Temperature − °C 0 2 4 6 8 10 VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 2.5 VGS − Gate to Source Voltage − V 12 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 100 1.4 ID = 30A VGS = 10V ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 10 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 175 TC − Case Temperature − °C 0.0 G007 0.8 1.0 G008 1k I(AV) − Peak Avalanche Current − A ID − Drain Current − A 0.6 Figure 9. Typical Diode Forward Voltage 1k 100 1ms 10 10ms 100ms Area Limited by RDS(on) 1s 0.1 0.01 0.01 0.4 VSD − Source to Drain Voltage − V Figure 8. On Resistance vs. Temperature 1 0.2 Single Pulse o RqJA = 96 C/W (min Cu) 0.1 DC 1 10 TC = 125°C 10 1 0.01 100 VDS − Drain To Source Voltage − V TC = 25°C 100 0.1 1 10 100 t(AV) − Time in Avalanche − ms G009 Figure 10. Maximum Safe Operating Area G010 Figure 11. Single Pulse Unclamped Inductive Switching 120 ID − Drain Current − A 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 TC − Case Temperature − °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 5 CSD16414Q5 SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 www.ti.com MECHANICAL DATA Q5 Package Dimensions K L L c1 E1 E2 b D2 4 4 5 5 e 3 6 3 6 E D1 7 7 2 2 8 8 1 1 q Top View Bottom View Side View c E1 A q Front View M0140-01 DIM MILLIMETERS MAX MIN MAX A 0.950 1.050 0.037 0.039 b 0.360 0.460 0.014 0.018 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 D1 4.900 5.100 0.193 0.201 D2 4.320 4.520 0.170 0.178 E 4.900 5.100 0.193 0.201 E1 5.900 6.100 0.232 0.240 E2 3.920 4.12 0.154 e 6 INCHES MIN 1.27 TYP K 0.760 L 0.510 q 0.00 0.162 0.050 0.030 0.710 Submit Documentation Feedback 0.020 0.028 Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 DIM Recommended PCB Pattern F1 F7 F3 8 1 F2 F11 F5 F9 5 4 F6 MILLIMETERS INCHES MIN MAX MIN MAX F1 6.205 6.305 0.244 0.248 F2 4.460 4.560 0.176 0.180 F3 4.460 4.560 0.176 0.180 F4 0.650 0.700 0.026 0.028 F5 0.620 0.670 0.024 0.026 F6 0.630 0.680 0.025 0.027 F7 0.700 0.800 0.028 0.031 F8 0.650 0.700 0.026 0.028 F9 0.620 0.670 0.024 0.026 F10 4.900 5.000 0.193 0.197 F11 4.460 4.560 0.176 0.180 F8 F4 F10 M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 Q5 Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm 3. Material:black static dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and Convection) PbF Reflow Compatible Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 7 CSD16414Q5 SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A • 8 Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16414Q5 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD16414Q5 Package Package Pins Type Drawing SON DQH 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.3 1.4 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD16414Q5 SON DQH 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Audio www.ti.com/audio Communications and Telecom www.ti.com/communications Amplifiers amplifier.ti.com Computers and Peripherals www.ti.com/computers Data Converters dataconverter.ti.com Consumer Electronics www.ti.com/consumer-apps DLP® Products www.dlp.com Energy and Lighting www.ti.com/energy DSP dsp.ti.com Industrial www.ti.com/industrial Clocks and Timers www.ti.com/clocks Medical www.ti.com/medical Interface interface.ti.com Security www.ti.com/security Logic logic.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Power Mgmt power.ti.com Transportation and Automotive www.ti.com/automotive Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com Wireless www.ti.com/wireless-apps RF/IF and ZigBee® Solutions www.ti.com/lprf TI E2E Community Home Page e2e.ti.com Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2011, Texas Instruments Incorporated