TI CSD16414Q5

CSD16414Q5
www.ti.com
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16414Q5
FEATURES
1
•
•
•
•
•
•
•
2
PRODUCT SUMMARY
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm × 6mm Plastic Package
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
•
V
nC
4.4
RDS(on)
Drain to Source On Resistance
VGS(th)
Threshold Voltage
nC
VGS = 4.5V
2.1
mΩ
VGS = 10V
1.5
mΩ
1.6
V
ORDERING INFORMATION
Device
Package
Media
CSD16414Q5
SON 5 × 6 Plastic
Package
13-inch
reel
APPLICATIONS
•
25
16.6
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
+16 / –12
V
Continuous Drain Current, TC = 25°C
100
A
Continuous Drain Current(1)
34
A
IDM
Pulsed Drain Current, TA = 25°C(2)
213
A
PD
Power Dissipation(1)
3.2
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, single pulse
ID = 100A, L = 0.1mH, RG = 25Ω
500
mJ
ID
(1) RqJA = 39°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%"
D
P0094-01
RDS(ON) vs VGS
Gate Charge
12
ID = 30A
VDS = 12.5V
ID = 30A
5
10
4
VG − Gate Voltage − V
RDS(on) − On-State Resistance − mΩ
6
TC = 125°C
3
2
1
8
6
4
2
TC = 25°C
0
0
0
2
4
6
8
VGS − Gate to Source Voltage − V
10
12
G006
0
5
10
15
20
25
30
35
40
Qg − Gate Charge − nC
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD16414Q5
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16/–12V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
25
V
1
mA
100
nA
1.6
2
V
VGS = 4.5V, ID = 30A
2.1
2.6
mΩ
VGS = 10V, ID = 30A
1.5
1.9
mΩ
VDS = 15V, ID = 30A
138
1.3
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
140
180
Rg
Series Gate Resistance
1.4
2.8
Ω
Qg
Gate Charge Total (4.5V)
16.6
21
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = 12.5V, f = 1MHz
VDS = 12.5V, ID = 30A
VDS = 13.5V, VGS = 0V
VDS = 12.5V, VGS = 4.5V, ID = 30A
RG = 2Ω
2810 3650
pF
2040 2650
pF
pF
4.4
nC
7.3
nC
4.5
nC
40
nC
15
ns
24
ns
18.4
ns
11.1
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 30A, VGS = 0V
Qrr
Reverse Recovery Charge
Vdd = 13.5V, IF = 30A, di/dt = 300A/ms
0.81
44
1
nC
V
trr
Reverse Recovery Time
Vdd = 13.5V, IF = 30A, di/dt = 300A/ms
35
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJC
Thermal Resistance Junction to Case (1)
R qJA
Thermal Resistance Junction to Ambient (1)
(1)
(2)
2
(2)
MIN
TYP
MAX
UNIT
1.1
°C/W
50
°C/W
R qJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R qJC is
specified by design while R qJA is determined by the user’s board design.
Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16414Q5
CSD16414Q5
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SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
GATE
GATE
Source
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RqJA = 50°C/W
when mounted on
1inch2 of 2 oz. Cu.
Max RqJA = 122°C/W
when mounted on
minimum pad area of 2
oz. Cu.
DRAIN
DRAIN
M0137-02
M0137-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – Normalized Thermal Impedance
10
1
0.5
0.3
0.1
0.01
0.1
0.05
Duty Cycle = t1/t2
0.02
0.01
P
t1
Single Pulse
t2
0.001
0.0001
0.001
RqJA = 96°C/W (max Cu)
TJ = P ´ ZqJA ´ RqJA
0.01
0.1
1
10
100
1000
10k
tp – Pulse Duration – s
Figure 1. Transient Thermal Impedance
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3
CSD16414Q5
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
100
100
90
80
ID − Drain Current − A
80
ID − Drain Current − A
VDS = 5V
90
VGS = 10V
VGS = 4.5V
70
60
50
VGS = 3V
VGS = 3.5V
40
30
VGS = 2.5V
20
70
60
TC = 125°C
50
40
TC = 25°C
30
20
10
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS − Drain to Source Voltage − V
TC = −55°C
0
1.5
2.0
G001
Figure 2. Saturation Characteristics
G002
f = 1MHz
VGS = 0V
6
C − Capacitance − nF
VG − Gate Voltage − V
3.5
7
ID = 30A
VDS = 12.5V
10
8
6
4
2
5
COSS = CDS + CGD
4
CISS = CGD + CGS
3
2
CRSS = CGD
1
0
0
0
5
10
15
20
25
30
35
40
Qg − Gate Charge − nC
0
5
G003
15
20
25
G004
Figure 5. Capacitance
2.0
RDS(on) − On-State Resistance − mΩ
6
ID = 250µA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
10
VDS − Drain to Source Voltage − V
Figure 4. Gate Charge
VGS(th) − Threshold Voltage − V
3.0
Figure 3. Transfer Characteristics
12
ID = 30A
5
4
TC = 125°C
3
2
1
TC = 25°C
0
−25
25
75
125
175
TC − Case Temperature − °C
0
2
4
6
8
10
VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
2.5
VGS − Gate to Source Voltage − V
12
G006
Figure 7. On Resistance vs. Gate Voltage
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Product Folder Link(s): CSD16414Q5
CSD16414Q5
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SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
100
1.4
ID = 30A
VGS = 10V
ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
10
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
0.0001
−25
25
75
125
175
TC − Case Temperature − °C
0.0
G007
0.8
1.0
G008
1k
I(AV) − Peak Avalanche Current − A
ID − Drain Current − A
0.6
Figure 9. Typical Diode Forward Voltage
1k
100
1ms
10
10ms
100ms
Area Limited
by RDS(on)
1s
0.1
0.01
0.01
0.4
VSD − Source to Drain Voltage − V
Figure 8. On Resistance vs. Temperature
1
0.2
Single Pulse
o
RqJA = 96 C/W (min Cu)
0.1
DC
1
10
TC = 125°C
10
1
0.01
100
VDS − Drain To Source Voltage − V
TC = 25°C
100
0.1
1
10
100
t(AV) − Time in Avalanche − ms
G009
Figure 10. Maximum Safe Operating Area
G010
Figure 11. Single Pulse Unclamped Inductive Switching
120
ID − Drain Current − A
100
80
60
40
20
0
−50
−25
0
25
50
75
100
125
TC − Case Temperature − °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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5
CSD16414Q5
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
www.ti.com
MECHANICAL DATA
Q5 Package Dimensions
K
L
L
c1
E1
E2
b
D2
4
4
5
5
e
3
6
3
6
E
D1
7
7
2
2
8
8
1
1
q
Top View
Bottom View
Side View
c
E1
A
q
Front View
M0140-01
DIM
MILLIMETERS
MAX
MIN
MAX
A
0.950
1.050
0.037
0.039
b
0.360
0.460
0.014
0.018
c
0.150
0.250
0.006
0.010
c1
0.150
0.250
0.006
0.010
D1
4.900
5.100
0.193
0.201
D2
4.320
4.520
0.170
0.178
E
4.900
5.100
0.193
0.201
E1
5.900
6.100
0.232
0.240
E2
3.920
4.12
0.154
e
6
INCHES
MIN
1.27 TYP
K
0.760
L
0.510
q
0.00
0.162
0.050
0.030
0.710
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0.020
0.028
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16414Q5
CSD16414Q5
www.ti.com
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
DIM
Recommended PCB Pattern
F1
F7
F3
8
1
F2
F11
F5
F9
5
4
F6
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.460
4.560
0.176
0.180
F3
4.460
4.560
0.176
0.180
F4
0.650
0.700
0.026
0.028
F5
0.620
0.670
0.024
0.026
F6
0.630
0.680
0.025
0.027
F7
0.700
0.800
0.028
0.031
F8
0.650
0.700
0.026
0.028
F9
0.620
0.670
0.024
0.026
F10
4.900
5.000
0.193
0.197
F11
4.460
4.560
0.176
0.180
F8
F4
F10
M0139-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Q5 Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm
3. Material:black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and Convection) PbF Reflow Compatible
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CSD16414Q5
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD16414Q5
Package Package Pins
Type Drawing
SON
DQH
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.8
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.3
1.4
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD16414Q5
SON
DQH
8
2500
335.0
335.0
32.0
Pack Materials-Page 2
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