CSD17501Q5A www.ti.com SLPS303 – DECEMBER 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17501Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 TA = 25°C unless otherwise stated Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems Optimized for Synchronous FET Applications 3.5 nC 3 mΩ VGS = 10V 2.4 mΩ 1.3 Package Media CSD17501Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel TA = 25°C unless otherwise stated V Qty Ship 2500 Tape and Reel VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage 20 / –12 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 28 A IDM Pulsed Drain Current, TA = 25°C(2) 187 A PD Power Dissipation(1) 3.2 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 90A, L = 0.1mH, RG = 25Ω 405 mJ Top View ID 8 1 7 2 S nC Text Added For Spacing ABSOLUTE MAXIMUM RATINGS The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. S V 13.2 VGS = 4.5V Device DESCRIPTION S UNIT 30 Text Added For Spacing ORDERING INFORMATION APPLICATIONS • TYPICAL VALUE VDS 6 3 D D D D G 5 4 (1) Typical RqJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% D P0093-01 TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING RDS(on) vs VGS TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING GATE CHARGE 12 ID = 25A 9 8 7 6 5 4 3 2 TC = 25°C TC = 125ºC 1 0 0 1 2 3 4 5 6 7 VGS - Gate-to- Source Voltage - V 8 9 10 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance - mΩ 10 ID = 25A VDD = 15V 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg - Gate Charge - nC (nC) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CSD17501Q5A SLPS303 – DECEMBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20/-12V VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 30 1 V 1 mA 100 nA 1.3 1.8 V VGS = 4.5V, IDS = 25A 3 3.7 mΩ VGS = 10V, IDS = 25A 2.4 2.9 mΩ VDS = 15V, IDS = 25A 110 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (4.5V) 13.2 Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, IDS = 25A VDS = 13.7V, VGS = 0V VDS = 15V, VGS = 4.5V, IDS = 25A,RG = 2Ω 2040 2630 pF 1350 1700 pF 66 85 pF 1.3 2.6 Ω 17 nC 3.5 nC 5.4 nC 2.9 nC 35 nC 10.4 ns 17 ns 18 ns 7.9 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 25A, VGS = 0V 0.8 VDD= 13.7V, IF = 25A, di/dt = 300A/ms 1 V 46 nC 32 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RqJC Thermal Resistance Junction to Case RqJA Thermal Resistance Junction to Ambient (1) (2) (1) (2) 2 MIN (1) 2 TYP MAX UNIT 1 °C/W 49 °C/W 2 RqJC is determined with the device mounted on a 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A CSD17501Q5A www.ti.com SLPS303 – DECEMBER 2010 GATE GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RqJA = 49°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Source Max RqJA = 114°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0137-02 M0137-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA - Normalized Thermal Impedance 10 1 0.5 0.3 0.1 0.05 0.1 0.01 Duty Cycle = t1/t2 0.02 0.01 P t1 Single Pulse t2 Typical RqJA = 91°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA 0.001 0.001 0.01 0.1 1 tp - Pulse Duration - s 10 100 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A 3 CSD17501Q5A SLPS303 – DECEMBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 80 100 60 50 40 30 VGS = 4.5V VGS = 6.0V VGS = 8.0V VGS = 10V 20 10 0 0 0.05 0.1 0.15 0.2 0.25 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A VDS = 5V 70 10 1 0.1 0.01 0.001 0.3 TC = 125°C TC = 25°C TC = −55°C 0 0.5 1 VDS - Drain-to-Source Voltage - V Figure 2. Saturation Characteristics TEXT ADDED FOR SPACING 3 3.5 4 TEXT ADDED FOR SPACING Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 25A VDD = 15V 10 C − Capacitance − nF VGS - Gate-to-Source Voltage (V) 2.5 100 10 8 6 4 1 0.1 2 0 0 5 10 15 20 25 30 0.01 35 0 5 10 Qg - Gate Charge - nC (nC) 15 20 25 30 VDS - Drain-to-Source Voltage - V Figure 4. Gate Charge Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 2 10 RDS(on) - On-State Resistance - mΩ ID = 250µA VGS(th) - Threshold Voltage - V 2 Figure 3. Transfer Characteristics 12 1.5 1 0.5 0 −75 −25 25 75 125 175 ID = 25A 9 8 7 6 5 4 3 2 TC = 25°C TC = 125ºC 1 0 0 1 Figure 6. Threshold Voltage vs. Temperature 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC - Case Temperature - ºC 4 1.5 VGS - Gate-to-Source Voltage - V Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A CSD17501Q5A www.ti.com SLPS303 – DECEMBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1.8 ID = 25A VGS = 4.5V ISD − Source-to-Drain Current - A Normalized On-State Resistance 1.6 100 1.4 1.2 1 0.8 0.6 0.4 0.2 −75 −25 25 75 125 1 0.1 0.01 0.001 0.0001 175 TC = 25°C TC = 125°C 10 0 0.2 Figure 8. Normalized On-State Resistance vs. Temperature 0.6 0.8 1 Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1000 I(AV) - Peak Avalanche Current - A 200 100 IDS - Drain-to-Source Current - A 0.4 VSD − Source-to-Drain Voltage - V TC - Case Temperature - ºC 10 1 1ms 10ms 100ms 1s DC 0.1 0.01 Single Pulse, Min Cu Area Typical RthJA = 91ºC/W 0.001 0.001 0.01 0.1 1 10 TC = 125°C TC = 25°C 100 10 1 0.01 100 0.1 1 10 t(AV) - Time in Avalanche - ms VDS - Drain-to-Source Voltage - V Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING IDS - Drain- to- Source Current - A 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature - ºC Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A 5 CSD17501Q5A SLPS303 – DECEMBER 2010 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L K H 2 7 8 8 2 7 1 1 q 3 5 4 6 3 4 D2 6 D1 5 e b L1 Top View Bottom View Side View q A c E1 E Front View M0135-01 DIM 6 MILLIMETERS MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 q 0° Submit Documentation Feedback 12° Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A CSD17501Q5A www.ti.com SLPS303 – DECEMBER 2010 Recommended PCB Pattern 4.900 (0.193) 0.605 (0.024) 5 4 0.630 (0.025) 0.620 (0.024) 1.270 (0.050) 4.460 (0.176) 8 1 0.650 (0.026) 3.102 (0.122) 0.700 (0.028) 1.798 (0.071) M0139-01 NOTE: Dimensions are in mm (inches). TEXT ADDED FOR SPACING Stencil Recommendation 0.500 (0.020) 1.235 (0.049) 0.500 (0.020) 1.585 (0.062) 4 5 0.450 (0.018) 1.570 (0.062) 0.620 (0.024) 1.270 (0.050) 1.570 (0.062) 4.260 (0.168) 8 1 PCB Pattern 0.632 (0.025) 3.037 (0.120) 1.088 (0.043) Stencil Opening M0209-01 NOTE: Dimensions are in mm (inches). TEXT ADDED FOR SPACING For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A 7 CSD17501Q5A SLPS303 – DECEMBER 2010 www.ti.com Q5A Tape and Reel Information K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 +0.10 2.00 ±0.05 Ø 1.50 –0.00 1.75 ±0.10 5.50 ±0.05 12.00 ±0.30 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN R 0.30 TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket 8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17501Q5A PACKAGE MATERIALS INFORMATION www.ti.com 17-Jun-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD17501Q5A Package Package Pins Type Drawing SON DQJ 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.2 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.3 1.4 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 17-Jun-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD17501Q5A SON DQJ 8 2500 347.0 342.0 55.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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