WILLAS FM120-M SE2305 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER SOT-23 Plastic-Encapsulate MOSFETS RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. P-Channel• High 8-V(D-S) MOSFET surge capability. • Guardring for overvoltage protection. FEATURE• Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. TrenchFET Power MOSFET • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 1. GATE Halogen free product for packing code suffix "H" Mechanical data APPLICATIONS 2. SOURCE z z 0.040(1.0) 0.024(0.6) 3. DRAIN Epoxy : for UL94-V0 ratedDevices flame retardant Load •Switch Portable : Molded plastic, SOD-123H • Case DC/DC Converter , • Terminals :Plated terminals, solderable per MIL-STD-750 z 0.031(0.8) Typ. Pb-Free package is available Method 2026 RoHS product for packing code • Polarity : Indicated by cathode band suffix ”G” 0.031(0.8) Typ. Dimensions in inches and (millimeters) : Any • Mounting Halogen free Position product for packing code suffix “H” • Weight : Approximated 0.011 gram MARKING: S5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 Maximum a=25℃ unless otherwise Maximum ratings DC Blocking(T Voltage 20 VDCnoted) IO Maximum Average Forward Rectified Current Parameter Peak Forward Surge Current 8.3 ms single half sine-wave Drain-Source superimposed Voltage on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Gate-Source Voltage IFSM RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Continuous Drain Current Continuous Source-Drain Storage Temperature RangeDiode Current TSTG Maximum Power Dissipation CHARACTERISTICS Junction Temperature Maximum Average Reverse Current at @T A=25℃ Storage Temperature @T A=125℃ Rated DC Blocking Voltage VDS VGS ID IS Value -8 40 120 ±8 -55 to +125 PD -4.1 -0.8 - 65 to +175 Unit V -55 to +150 A W 0.35 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Thermal Resistance from Junction to Ambient(t≤10s) Maximum Forward Voltage at 1.0A DC Symbol 1.0 30 VF IR RθJA TJ TSTG 0.50 357 0.70 0.85 150 0.5 -50 ~+150 10 ℃/W 0.9 ℃ 0.92 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2305 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Electrical characteristics (Ta=25℃ otherwise noted) better reverse leakage currentunless and thermal resistance. • Low profile surface mounted application in order to optimize board space. Parameter Symbol SOD-123H Test Condition Min • Low power loss, high efficiency. Static • High current capability, low forward voltage drop. surge capability. • High Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA • Guardring for overvoltage protection. Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA high-speed switching. • Ultra epitaxial planar chip, metal silicon • Silicon Gate-source leakage IGSS junction. VDS =0V, VGS =±8V • Lead-free parts meet environmental standards of Zero gate voltage drain current MIL-STD-19500 /228 IDSS Halogen free product for packing code suffix "H" Drain-source on-state resistance Mechanical data RDS(on) Method 2026 -8 -0.5 -0.9 ±100 VGS =-2.5V, ID = -3A 0.060 0.090 0.031(0.8) Typ. 6 S 740 Dimensions in inches and (millimeters) VDS =-4V,VGS =0V,f =1MHz ID =-4.1A Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. VDS =-4V,VGS =-2.5V, b derate current by 20% load, Gate-source charge Q For capacitive gs Gate-drain charge Marking Code pF 290 190 Qg RATINGS Ω 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS b nA µA 0.045 VDS =-4V,VGS =-4.5V, Total gate charge V 0.071(1.8) 0.056(1.4) -1 Ciss • Polarity : Indicated by cathode band b,c Output capacitance Coss • Mounting Position : Any b,c Reverse transfer capacitance • Weight : Approximated 0.011 gram Crss b Units 0.012(0.3) Typ. VGS =-4.5V, ID = -3.5A VGS =-1.8V,ID= -2.0A • Epoxy : UL94-V0 rated flame retardant a Case : Molded plastic, SOD-123H • Forward transconductance gfs VDS =-5V, ID =-4.1A , • Terminals :Plated terminals, solderable per MIL-STD-750 Dynamic Input capacitanceb,c Max VDS =-8V, VGS =0V • RoHS product for packing code suffix "G" a Typ 0.146(3.7) 0.130(3.3) 7.8 15 4.5 9 nC 1.2 ID =-4.1A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Qgd b,c Gate resistance Maximum Recurrent Peak Reverse Voltage b,c Maximum RMS Voltage Turn-on delay time 12 RgVRRM = f 1MHz 20 VRMS td(on) RiseMaximum timeb,c DC Blocking Voltage tr VDC IO b,c Surge Current 8.3 ms single half sine-wave FallPeak timeForward tf IFSM Maximum Average Forward Rectified Current Turn-off Delay timeb,c superimposed on rated load (JEDEC method) Turn-on delay timeb,c Typical Thermal Resistance (Note 2) Junction Capacitance (Note 1) RiseTypical timeb,c td(off) td(on)RΘJA tr CJ TJ Operating Temperature Range b,c 14 VDD20 =-4V, 13 30 14 40 15 50 18 10 7 80 14100 Ω 150 115 120 200 21 28 35 42 13 56 20 70 105 140 30 40 50 60 35 80 53100 150 200 RL=1.2Ω, ID ≈-3.3A, 1.0 32 30 10 VGEN=-4.5V,Rg=1Ω VDD=-4V, 1.6 16 1.460 5 40 120 11 RL=1.2Ω,-55 ID to ≈-3.3A, +125 VGEN=-8V,Rg=1Ω - 65 to +175 20 10 ns 17 -55 to +150 Turn-off delay time td(off) b,c Fall time tf Drain-source body CHARACTERISTICS diode characteristics SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Storage Temperature Range Maximum Forward Voltage at 1.0A DC Continuous source-drain diode current Maximum Average Reverse Current at @T A=25℃ Pulse diode forwardVoltage current Rated DC Blocking a TSTG IS VF @T A=125℃ ISM Body ciode voltage NOTES: IR VSD TC=25℃ 0.50 22 48 16 0.70 24 0.9 0.85 -1.4 0.5 -10 10 IF=-3.3A 33 -0.8 -1.2 A 0.92 V Note1-: Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2305 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers -8 -4 Ta=25℃ Pulsed VDS (A) -1 0.040(1.0) 0.024(0.6) -0 -0.0 0.031(0.8) -0.5 Typ. -1.0 (V) 0.031(0.8) -2.0 Typ. -1.5 GATE TO SOURCE VOLTAGE • Polarity : Indicated by cathode band : Any • Mounting Position RDS(ON) —— ID •TWeight : Approximated 0.011 gram =25℃ 300 0.071(1.8) 0.056(1.4) -2 • Epoxy : UL94-V0 rated flame retardant -0 • Case : Molded plastic, SOD-123H -0 -1 -2 -3 -4 , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. -3 Mechanical data DRAIN TO SOURCE VOLTAGE 0.146(3.7) 0.130(3.3) -4 ID (A) DRAIN CURRENT ID -12 Transfer Characteristics SOD-123H -5 DRAIN CURRENT Output Characteristics better reverse leakage current and thermal resistance. VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V =25℃profile surface mounted application in order to •TLow a Pulsed optimize board space. VGS=-2.0V • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" =-1.5V Halogen free product for packing code suffixVGS"H" -16 VGS (V) Dimensions in inches and (millimeters) RDS(ON) —— 500 VGS Ta=25℃ a Pulsed Pulsed VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage 60 VGS=-2.5V VDC 20 Maximum Average Forward Rectified Current IO VGS=-4.5V VGS=-1.8V Peak Forward Surge Current 8.3 ms single half sine-wave 0 -0 -3 -6 -9 superimposed on rated load (JEDEC method) DRAIN CURRENT ID Typical Thermal Resistance (Note 2) (A) IFSM Operating Temperature Range Storage Temperature Range IS —— -20 Ta=25℃ -10 IS (A) SOURCE CURRENT (mΩ) 28 35 30100 40 50 0 -0 16 60 18 80 42 60 ID=-3.3A 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 -4 -2 GATE TO SOURCE VOLTAGE 40 120 -55 to +125 -6 VGS -8 (V) -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.85 0.9 0.5 IR @T A=125℃ Rated-3DC Blocking Voltage 21 TSTG Maximum Forward Voltage at 1.0A DC 15 50 TJ CHARACTERISTICS Pulsed 14 40 CJ VSD 13 200 30 -12 RΘJA Typical Junction Capacitance (Note 1) 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage 120 RDS(ON) RDS(ON) RATINGS Marking Code ON-RESISTANCE (mΩ) 240 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For 180 capacitive load, derate current by 20% ON-RESISTANCE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 400 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -1 2- Thermal Resistance From Junction to Ambient -0.3 -0.1 -0.2 2012-06 2012-10 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE VSD (V) -1.2 -1.4 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2305 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .063(1.60) .047(1.20) Mechanical data • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. , 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) • Case : Molded plastic, SOD-123H 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 .080(2.04) .070(1.78) Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 16 60 18 10 .008(0.20) 100 115 150 120 200 35 42 56 70 .003(0.08) 105 140 50 60 150 200 15 50 80 40 120 -55 to +125 100 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 80 1.0 30 TSTG .004(0.10)MAX. Rated DC Blocking Voltage 14 40 IO IFSM RΘJA Typical Thermal Resistance (Note 2) .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP.