STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP60NF06 STP60NF06FP ■ ■ ■ ■ VDSS RDS(on) ID 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 1 TO-220 DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. 3 2 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP60NF06 VDS VDGR VGS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit STP60NF06FP 60 V 60 V ± 20 V ID Drain Current (continuos) at TC = 25°C 60 37 A ID Drain Current (continuos) at TC = 100°C 42 26 A Drain Current (pulsed) 240 148 A Total Dissipation at TC = 25°C 110 42 W Derating Factor 0.73 0.28 W/°C IDM (l) PTOT dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area January 2002 4 -- V/ns 2500 –65 to 175 V °C (1) I SD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX 1/9 STP60NF06 - STP60NF06FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-220 TO-220FP 1.36 3.57 °C/W 62.5 °C/W 300 °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) 360 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 60 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Max. Unit 4 V 0.014 0.016 Ω Typ. Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 30 A Min. Typ. 2 DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS =15V , ID = 30 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 20 S 1810 pF 360 pF 125 pF STP60NF06 - STP60NF06FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit 16 ns Rise Time VDD = 30 V, ID = 30 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 108 ns Qg Total Gate Charge VDD = 48V, ID =60A,VGS = 10V 49 Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 14 nC td(on) tr Turn-on Delay Time 66 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 30 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 43 20 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =48V, ID = 60 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 40 12 21 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. Max. Unit 60 A 240 A 1.3 V 73 182 5 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP60NF06 - STP60NF06FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP60NF06 - STP60NF06FP Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP60NF06 - STP60NF06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP60NF06 - STP60NF06FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STP60NF06 - STP60NF06FP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 8/9 L5 1 2 3 L4 STP60NF06 - STP60NF06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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