STU7NB90 STU7NB90I N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET ■ ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STU7NB90 900 V < 1.45 Ω 7.3 A STU7NB90I 900 V < 1.45 Ω 7.3 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 2 3 Max220 Max220I INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STU7NB90 VDS VDGR VGS Unit STU7NB90I Drain-source Voltage (VGS = 0) 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 7.3 7.3 (*) A ID Drain Current (continuos) at TC = 100°C 4.6 4.6 (*) A Drain Current (pulsed) 29.2 29.2 (*) A Total Dissipation at TC = 25°C 170 60 W Derating Factor 1.36 0.47 W/°C IDM (●) PTOT dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2001 4 - V/ns 2500 V –65 to 150 °C 150 °C (1) I SD ≤7.3 A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Current Limited by Package 1/9 STU7NB90 - STU7NB90I THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Max220 Max220I 0.734 2.1 °C/W Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 7.3 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 600 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 900 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 4 A Min. Typ. Max. Unit 2 3 4 V 1.1 1.45 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 8 S 2120 pF Ciss Input Capacitance Coss Output Capacitance 225 pF Crss Reverse Transfer Capacitance 23 pF STU7NB90 - STU7NB90I ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 450 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 720V, ID = 7.4A, VGS = 10V Typ. Max. Unit 25 ns 12 ns 51 72 nC 12.5 nC 23.5 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 720V, ID = 7.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 22 ns 15 ns 31 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 7.3 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 7.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 7.3 A 29.2 A 1.6 V 700 ns 6.3 µC 18 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for Max220 Safe Operating Area for Max220I 3/9 STU7NB90 - STU7NB90I Thermal Impedence for Max220 Output Characteristics Transconductance 4/9 Thermal Impedence for Max220I Transfer Characteristics Static Drain-source On Resistance STU7NB90 - STU7NB90I Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STU7NB90 - STU7NB90I Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STU7NB90 - STU7NB90I Max220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.3 TYP. 4.6 0.169 TYP. MAX. 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 0.626 0.641 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 7/9 STU7NB90 - STU7NB90I I-Max220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.6 2.75 0.102 0.108 A2 1.95 2.15 0.077 0.084 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.017 0.023 D 15.9 16.3 0.626 0.641 D1 12.5 12.9 0.492 0.508 D2 0.6 1 0.023 0.039 D3 1.75 2.15 0.069 0.084 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 P011S 8/9 STU7NB90 - STU7NB90I Information furnished is believed to be accurate and reliable. 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