STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2Ω - 4A TO-220/TO-220FP PowerMesh II MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 Ω 4A STP4NC50FP 500 V < 2.7 Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 1 2 3 3 1 2 TO-220FP TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP4NC50 VDS VDGR VGS Unit STP4NC50FP Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 4 4(*) A ID Drain Current (continuos) at TC = 100°C 2.5 2.5(*) A Drain Current (pulsed) 12 16(*) A Total Dissipation at TC = 25°C 80 40 W 0.32 W/°C IDM (●) PTOT Derating Factor dv/dt (1) VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2000 0.64 Peak Diode Recovery voltage slope 3.5 - V/ns 2000 V –65 to 150 °C 150 °C (1)ISD ≤4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/9 STP4NC50/FP THERMAL DATA TO-220 TO-220FP 1.56 3.12 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 110 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA Max. Unit V(BR)DSS 500 V ON (1) Symbol Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A ID(on) On State Drain Current VGS(th) VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 4 V 2.2 2.7 Ω 4 A DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 3 S 315 pF 52 pF 7.7 pF STP4NC50/FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 300 V, ID = 2 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Typ. Unit 10 ns 13 ns 12.5 VDD = 400V, I D = 4 A, VGS = 10V Max. 17 nC 2.7 nC 6.1 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Condit ions Min. VDD = 400V, ID = 4 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 15 ns 13 ns 20 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 4 A, VGS = 0 ISD =4 A, di/dt = 100A/µs VDD = 100V, T j = 150°C (see test circuit, Figure 5) Max. Unit 4 A 16 A 1.6 V 400 ns 1.64 µC 8.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP4NC50/FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP4NC50/FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP4NC50/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP4NC50/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 E 0.050 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 7/9 L4 P011C STP4NC50/FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 8/9 L4 STP4NC50/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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