Datasheet

AOL1444
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1444 uses advanced trench technology to
provide excellent R DS(ON), shoot-through immunity and
body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion.
VDS (V) = 30V
ID = 85A (V GS = 10V)
RDS(ON) < 4.3mΩ (VGS = 10V)
RDS(ON) < 6.3mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8TM Top View
D
D
S
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C
G
TC=100°C
B
Repetitive avalanche energy L=0.1mH
TC=25°C
B
Power Dissipation
A
Maximum
30
Units
V
±20
V
85
ID
IDM
Pulsed Drain Current
Continuous Drain
TA=25°C
Current G
TA=70°C
C
Avalanche Current
Power Dissipation
S
G
TC=100°C
TA=25°C
TA=70°C
17
C
A
IDSM
IAR
14
30
A
EAR
45
mJ
100
PD
W
50
2.1
PDSM
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case C
Alpha & Omega Semiconductor, Ltd.
A
73
200
W
1.3
-55 to 175
Symbol
RθJA
RθJC
Typ
19.6
48
1
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
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AOL1444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
0.005
1
30
VDS=24V, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.45
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
100
nA
3
V
3.2
4.3
4.3
5.2
4.9
6.3
mΩ
1
V
85
A
7000
pF
A
Forward Transconductance
VDS=5V, ID=20A
85
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
6070
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
1.8
gFS
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
V
TJ=55°C
IGSS
RDS(ON)
Typ
mΩ
S
638
pF
375
pF
0.45
0.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
96.4
115
nC
Qg(4.5V) Total Gate Charge
46.4
55
nC
VGS=4.5V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
13.6
nC
15.6
nC
15.7
21
ns
14.2
21
ns
55.5
75
ns
14
21
ns
31
38
24
29
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. Rev1. July 2008
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Revision 2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
VDS=5V
10V
50
50
4.5V
40
3.5V
30
ID(A)
ID(A)
40
VGS=3V
20
125°C
30
20
25°C
10
10
0
0
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
5
1
6.0
2
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
4
1.8
5.5
Normalized On-Resistance
VGS=4.5V
5.0
RDS(ON) (mΩ )
1.5
4.5
4.0
VGS=10V
3.5
3.0
2.5
2.0
ID=20A
1.6
1.4
VGS=4.5V
VGS=10V
1.2
1
0.8
0
20
40
60
80
100
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
14
ID=20A
1.0E+01
12
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ )
10
TC=100°C
8
TA=25°C
125°C
1.0E-01
1.0E-02
25°C
6
1.0E-03
25°C
-55 to 175
4
1.0E-04
1.0E-05
2
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=15V
ID=20A
Ciss
7000
Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
5000
4000
3000
Coss
2000
Crss
1000
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
10µs
TJ(Max)=175°C
TC=25°C
800
100
RDS(ON)
limited
10
Power (W)
ID (Amps)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
1
400
200
0.1
0.1
600
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
0
0.00001
80
60
40
20
0
0.0001
0.001
0.01
0
25
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
100
80
80
60
Power (W)
Current rating ID(A)
50
40
20
60
40
20
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.01
175
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOL1444
c
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
L
Isd
+
VDC
Ig
Alpha & Omega Semiconductor, Ltd.
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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