VISHAY SIP32459

SiP32458, SiP32459
Vishay Siliconix
20 m, Slew Rate Controlled Load Switch in WCSP6
DESCRIPTION
FEATURES
SiP32458 and SiP32459 are slew rate controlled integrated
high side load switches that operate in the input voltage
range from 1.5 V to 5.5 V.
SiP32458 and SiP32459 are of P-channel MOSFET
switching element with integrated gate pump that provides
20 m switch on resistance over a wide input voltage range.
These devices have low voltage logic control threshold that
can interface with low voltage control I/O directly without
extra level shift or driver. A 2.8 M pull-down resistor is
integrated at logic control EN pin.
The slow slew rate of SiP32458 and SiP32459 in the range
of 3 ms limits the in-rush current and minimized the switching
noise.
The SiP32458 features a reverse current blocking capability
while the SiP32459 features an integrated output discharge
switch.
Both SIP32458 and SiP32459 are available in compact wafer
level WCSP package, WCSP6 1 mm x 1.5 mm with 0.5 mm
pitch.
•
•
•
•
•
•
•
•
•
Low input voltage, 1.5 V to 5.5 V
Low RON, 20 m typical at 5 V
Slew rate control
Low logic control
Reverse current blocking when disabled
(SiP32458, without output discharge switch)
Integrated output discharge switch (SiP32459 only)
Integrated pull down resistor at EN pin
6 bumps WCSP package
Material categorization: For definitions of compliance
please see www.vishay.com/doc?9991
APPLICATIONS
•
•
•
•
•
•
•
•
Battery operated devices
Smart phones
GPS and PMP
Computer
Medical and healthcare equipment
Industrial and instrument
Cellular phones and portable media players
Game console
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
IN
VOUT
OUT
SiP32458, SiP32459
CIN
COUT
EN
EN
GND
GND
GND
Figure 1 - SiP32458 and SiP32459 Typical Application Circuit
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
- 40 °C to 85 °C
Package
Marking
Part Number
WCSP: 6 Bumps
(2 x 3, 0.5 mm pitch,
250 µm bump height,
1.5 mm x 1 mm die size)
AA
SiP32458DB-T2-GE1
AB
SiP32459DB-T2-GE1
Note:
GE1 denotes halogen-free and RoHS compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VIN)
Unit
- 0.3 to 6
Enable Input Voltage (VEN)
- 0.3 to 6
Output Voltage (VOUT)
- 0.3 to 6
Maximum Continuous Switch Current (Imax.)
3
Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle)
6
ESD Rating (HBM)
V
A
4000
V
Junction Temperature (TJ)
- 40 to 150
°C
Thermal Resistance (JA)a
110
°C/W
500
mW
Power Dissipation (PD
)a
Notes:
a. Device mounted with all bumps soldered to PC board.
b. Derate 9.1 mW/°C above TA = 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Input Voltage Range (VIN)
Operating Junction Temperature Range
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2
Unit
1.5 to 5.5
V
- 40 to 125
°C
For technical questions, contact: [email protected]
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
SPECIFICATIONS
Parameter
Test Conditions Unless Specified
VIN = 1.5 V to 5.5 V, TA = - 40 °C to 85 °C
(Typical values are at VIN = 4.5 V, TA = 25 °C)
Symbol
Operating Voltagec
VIN
Quiescent Current
IQ
Limits
Unit
Min.a
Typ.b
Max.a
1.5
-
5.5
-
4.2
9.5
-
-
1
-
-
10
VEN = VIN, OUT = open
SiP32458
Off Supply Current
IQ(off)
Off Switch Current
IDS(off)
EN = GND, OUT = 0 V
-
-
10
IRB
VOUT = 2.5 V, VIN = 0.75 V, VEN = 0 V
(SiP32458 only)
-
-
10
VIN = 1.5 V, IL = 500 mA, TA = 25 °C
-
30
36
VIN = 1.8 V, IL = 500 mA, TA = 25 °C
-
26
32
VIN = 3.3 V, IL = 500 mA, TA = 25 °C
-
20
26
Reverse Blocking Current
RDS(on)
On-Resistance
EN = GND, OUT = open
SiP32459
VIN = 5 V, IL = 1 A, TA = 25 °C
On-Resistance Temp.-Coefficient
TCRDS
20
26
2820
-
ppm/°C
-
70
-

RPD
EN Input Low Voltagec
VIL
VIN = 1.5 V
-
-
0.4
c
EN Input High Voltage
VIH
VIN = 5.5 V
1
-
-
EN Input Leakage
IEN
VIN = 5.5 V, VEN = 0 V
-
-
1
VIN = 5.5 V, VEN = 1.2 V
-
0.44
1
REN
td(on)
Output Turn-On Rise Time
tr
Output Turn-Off Delay Time
td(off)
VIN = 5.5 V, VEN = 1.2 V
VIN = 4.5 V, RLOAD = 5 ,
CL = 100 µF, TA = 25 °C
m
-
Output Pulldown Resistance
Output Turn-On Delay Time
µA
VIN = 3.3 V, IOUT = 5 mA, VEN = 0 V
(SiP32459 only)
EN Pull Down Resistor
V
-
2.8
-
-
0.5
-
-
3
-
-
18
-
V
µA
M
ms
µs
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
PIN CONFIGURATION
1
OUT
A
OUT
B
GND
C
2
W
AA
Backside
IN
IN
A2
A1
OUT
IN
IN
B2
B1
OUT
EN
EN
C2
C1
GND
Bumpside
Figure 2 - WCSP 2 x 3 Package
PIN DESCRIPTION
Pin Number
Name
Function
A1, B1
OUT
These are the output pins of the switch
C1
GND
Ground connection
A2, B2
IN
These are input pins of the switch
C2
EN
Enable input
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
BLOCK DIAGRAM
Figure 3 - Functional Block Diagram
7
7
6
6
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
5
4
3
2
VIN = 5.5 V
5
VIN = 4.5 V
4
VIN = 3.6 V
3
VIN = 2.5 V
2
VIN = 1.2 V
1
1
0
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
VIN - Input Voltage (V)
Figure 4 - Quiescent Current vs. Input Voltage
Figure 6 - Quiescent Current vs. Temperature
18
1000
SiP32458
16
100
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
SiP32458
14
12
10
8
6
4
VIN = 5.5 V
10
VIN = 4.5 V
1
VIN = 3.6 V
0.1
0.01
2
VIN = 2.5 V
VIN = 1.2 V
0
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN - Inport Voltage (V)
Figure 5 - Off Supply Current vs. Input Voltage
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4
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 7 - Off Supply Current vs. Temperature
For technical questions, contact: [email protected]
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
700
10000
1000
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
600
500
400
300
200
100
VIN = 4.5 V
100
VIN = 3.6 V
10
VIN = 2.5 V
1
0.1
0
VIN = 1.2 V
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 40
- 20
0
20
VIN - Input Voltage (V)
60
80
100
Figure 11 - Off Supply Current vs. Temperature
700
10000
IDS(off) - Off Switch Current (nA)
600
IDS(off) - Off Switch Current (nA)
40
Temperature (°C)
Figure 8 - Off Supply Current vs. Input Voltage
500
400
300
200
VIN = 5.5 V
1000
VIN = 4.5 V
100
VIN = 3.6 V
10
1
VIN = 2.5 V
0.1
100
VIN = 1.2 V
0
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 40
- 20
0
20
40
60
80
100
VIN - Input Voltage (V)
Temperature (°C)
Figure 9 - Off Switch Current vs. Input Voltage
Figure 12 - Off Switch Current vs. Temperature
40
25
38
24
36
IO = 0.5 A
VIN = 4.5 V
23
34
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
VIN = 5.5 V
SiP32459
SiP32459
32
30
IO = 3.0 A
28
IO = 2.0 A
26
IO = 1.0 A
24
22
22
21
20
19
18
17
20
IO = 0.1 A
18
16
IO = 0.5 A
16
1.0
1.5
2.0
2.5
3.0
15
3.5
4.0
4.5
5.0
VIN - Input Voltage (V)
Figure 10 - RDS(on) vs. Input Voltage
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
5.5
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 13 - RDS(on) vs. Temperature
For technical questions, contact: [email protected]
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0
0.9
0.85
- 20
0.8
EN Threshold Voltage (V)
IIN - Input Current (nA)
SiP32458
- 40
VIN = 0.75V
- 60
- 80
- 100
VIH
0.75
VIL
0.7
0.65
0.6
0.55
0.5
- 120
0.45
- 140
0.4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VOUT - Output Voltage (V)
VIN - Input Voltage(V)
Figure 14 - Reverse Blocking Current vs. Output Voltage
Figure 17 - EN Threshold Voltage vs. Input Voltage
50
1
SiP32458
VIN = 4.5 V
CL = 100 μF
RL = 5 Ω
td(on) - Turn-On Delay Time (ms)
IIN - Input Current (nA)
0
VOUT = 2.5 A
VIN = 0.75 V
-50
-100
-150
-200
-250
-300
0.8
0.6
0.4
0.2
0
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
Temperature (°C)
40
60
80
100
Temperature (°C)
Figure 15 - Reverse Blocking Current vs. Temperature
Figure 18 - Turn-On Delay Time vs. Temperature
85
4.00
SiP32459
VIN = 4.5 V
CL = 100 μF
RL = 5 Ω
3.75
80
VIN = 3.3 V
IOUT = 5 mA
3.50
75
tr - Rise Time (ms)
RPD - Output Pulldown Resistance (Ω)
20
70
65
60
3.25
3.00
2.75
2.50
2.25
2.00
55
- 40
- 20
0
20
40
60
80
100
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 16 - Output Pulldown Resistance vs. Temperature
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- 40
Figure 19 - Rise Time vs. Temperature
For technical questions, contact: [email protected]
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
2.00
24.00
VIN = 4.5 V
CL = 100 μF
RL = 5 Ω
td(off) - Turn-Off Delay Time (ms)
td(off) - Turn-Off Delay Time (μs)
22.00
VIN = 4.5 V
CL = 100 μF
RL = 150 Ω
1.80
20.00
18.00
16.00
14.00
12.00
1.60
SiP32458
1.40
1.20
1.00
SiP32459
0.80
0.60
0.40
0.20
0.00
10.00
- 40
- 20
0
20
40
60
80
100
- 40
- 20
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 20 - Turn-Off Delay Time vs. Temperature
0
Figure 21 - Turn-Off Delay Time vs. Temperature
TYPICAL WAVEFORMS
Figure 22 - Turn-On Time
(VIN = 4.5 V, RL = 5 , CL = 100 µF)
Figure 24 - Turn-On Time
(VIN = 4.5 V, RL = 150 , CL = 100 µF)
Figure 23 - Turn-Off Time
(VIN = 4.5 V, RL = 5 , CL = 100 µF)
Figure 25 - Turn-Off Time, SiP32458
(VIN = 4.5 V, RL = 150 , CL = 100 µF)
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
Protection Against Reverse Voltage Condition
The SiP32458 contains the reverse blocking circuit to keep
the output current from flowing back to the input in case the
output voltage is higher than the input voltage.
Figure 26 - Turn-Off Time, SiP32459
(VIN = 4.5 V, RL = 150 , CL = 100 µF)
DETAILED DESCRIPTION
P (max.)
SiP32458 and SiP32459 are P-channel power MOSFET
designed as high side load switches. They incorporate a
negative charge pump at the gate to keep the gate to source
voltage high when turned on therefore keep the on
resistance low at lower input voltage range. SiP32458 and
SiP32459 are designed with slow slew rate to minimize the
inrush current during turn on. The SiP32458 has a reverse
blocking circuit to prevent the current from going back to the
input in case the output voltage is higher than the input
voltage. The SiP32459 has an output pulldown resistor to
discharge the output capacitance when the device is off.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required,
a 4.7 µF or larger capacitor for CIN is recommended in almost
all applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective in
minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the inrush
current depends on the output capacitor, the bigger the COUT
the higher the inrush current. There are no ESR or capacitor
type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 0.4 V or below to fully shut down the device
and 1 V or above to fully turn on the device. There is a
2.8 M resistor connected between EN pin and GND pin.
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Thermal Considerations
These devices are designed to maintain a constant output
load current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 3 A as
stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package. To
obtain the highest power dissipation (and a thermal
resistance of 110 °C/W) the device should be connected to a
heat sink on the printed circuit board.
The maximum power dissipation in any application
is dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance,
J-A = 110 °C/W, and the ambient temperature, TA, which
may be formulaically expressed as:
=
T J (max.) - T A
θJ- A
=
125 - TA
110
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
500 mW.
So long as the load current is below the 3 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C is
36 m at VIN = 1.5 V. The RDS(ON) at 70 °C can be
extrapolated from this data using the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T)
Where TC is 2820 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 36 m x (1 + 0.00282 x (70 °C - 25 °C))
= 40.5 m
The maximum current limit is then determined by
P (max.)
I LOAD (max.) <
R DS(ON )
which in this case is 3.5 A. Under the stated input voltage
condition, if the 3.5 A current limit is exceeded the internal die
temperature will rise and eventually, possibly damage the
device.
To avoid possible permanent damage to the device and keep
a reasonable design margin, it is recommended to operate
the device maximum up to 3 A only as listed in the Absolute
Maximum Ratings table.
For technical questions, contact: [email protected]
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32458, SiP32459
Vishay Siliconix
PACKAGE OUTLINE
WCSP: 6 Bumps (2 x 3, 0.5 mm Pitch, 250 µm Bump Height, 1 mm x 1.5 mm Die Size)
Dimension
MILLIMETERS
INCHES
Min.
Nom.
MAX.
Min.
Nom.
MAX.
A
0.540
0.580
0.620
0.0212
0.0228
0.0244
A1
0.225
0.250
0.275
0.0088
0.0098
0.0108
b
0.280
0.300
0.320
0.0110
0.0118
0.0126
s
0.230
0.250
0.270
0.0090
0.0098
0.0106
D
0.920
0.960
1.000
0.0362
0.0378
0.0394
E
1.420
1.460
1.500
0.0559
0.0575
0.0591
e
0.500
0.0197
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63999
Document Number: 63999
S12-2709-Rev. A, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000