MICROCHIP MCP1401T-E/OT

MCP1401/02
Tiny 500 mA, High-Speed Power MOSFET Driver
Features
General Description
• High Peak Output Current: 500 mA (typ.)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 470 pF in 19 ns (typ.)
- 1000 pF in 34 ns (typ.)
• Short Delay Times: 35 ns (typ.)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 850 mA (typ.)
- With Logic ‘0’ Input – 100 mA (typ.)
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Logic Input Will Withstand Negative Swing Up To 5V
• Space-saving 5L SOT-23 Package
The MCP1401/02 are high speed MOSFET drivers
capable of providing 500 mA of peak current. The
inverting or non-inverting single channel output is
directly controlled from either TTL or CMOS (3V to
18V). These devices also feature low shoot-through
current, matched rise/fall times and propagation delays
which make them ideal for high switching frequency
applications.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
The MCP1401/02 devices operate from a 4.5V to 18V
single power supply and can easily charge and discharge 470 pF gate capacitance in under 19 ns (typ).
They provide low enough impedances in both the on
and off states to ensure the MOSFETs intended state
will not be affected, even by large transients.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current being forced back into their
outputs. All terminals are fully protect against Electrostatic Discharge (ESD) up to 3 kV (HBM) and 400V
(MM).
Package Types
SOT-23-5
MCP1401 MCP1402
GND 1
5 OUT
OUT
4 GND
GND
VDD 2
IN 3
© 2007 Microchip Technology Inc.
DS22052A-page 1
MCP1401/02
Functional Block Diagram
Inverting
VDD
850 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 25 pF
(Each Input)
4.7V
MCP1401 Inverting
MCP1402 Non-inverting
GND
DS22052A-page 2
© 2007 Microchip Technology Inc.
MCP1401/02
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN>VDD)................................................50 mA
Package Power Dissipation (TA = 50oC)
5L SOT23 ..................................................................0.39W
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–1
—
1
µA
Input Voltage
VIN
-5
—
VDD+0.3
V
Conditions
Input
0V ≤ VIN ≤ VDD
Output
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
12
18
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
10
16
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
0.5
—
A
VDD = 18V (Note 2)
Latch-Up Protection Withstand Reverse Current
IREV
—
>0.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µs
Rise Time
tR
—
19
25
ns
Figure 4-1, Figure 4-2
CL = 470 pF
Fall Time
tF
—
15
20
ns
Figure 4-1, Figure 4-2
CL = 470 pF
Delay Time
tD1
—
35
40
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—
35
40
ns
Figure 4-1, Figure 4-2
VDD
4.5
—
18.0
V
IS
—
0.85
1.1
mA
VIN = 3V
IS
—
0.10
0.20
mA
VIN = 0V
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
© 2007 Microchip Technology Inc.
DS22052A-page 3
MCP1401/02
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Logic ‘1’, High Input Voltage
VIH
2.4
Logic ‘0’, Low Input Voltage
VIL
—
Input Current
IIN
–10
Input Voltage
VIN
-5
VOH
VDD – 0.025
Conditions
—
—
V
—
0.8
V
—
+10
µA
—
VDD+0.3
V
—
—
V
DC TEST
Input
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
12
18
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
10
16
Ω
IOUT = 10 mA, VDD = 18V
Rise Time
tR
—
20
30
ns
Figure 4-1, Figure 4-2
CL = 470 pF
Fall Time
tF
—
18
28
ns
Figure 4-1, Figure 4-2
CL = 470 pF
Delay Time
tD1
—
40
51
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—
40
51
ns
Figure 4-1, Figure 4-2
VDD
4.5
—
18.0
V
IS
—
—
0.90
0.11
1.10
0.20
mA
mA
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
VIN = 3V
VIN = 0V
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
–40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
θJA
—
256
—
°C/W
Package Thermal Resistances
Thermal Resistance, 5L-SOT23
DS22052A-page 4
© 2007 Microchip Technology Inc.
MCP1401/02
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
350
350
3300 pF
250
200
150
1000 pF
100
3300 pF
300
Fall Time (ns)
Rise TIme (ns)
300
470 pF
100 pF
50
250
200
150
100 pF
470 pF
100
1000 pF
50
0
0
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
FIGURE 2-1:
Voltage.
10
12
14
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
Fall Time vs. Supply
250
12V
12V
200
Fall Time (ns)
Rise Time (ns)
200
150
18V
100
50
150
1000
18V
100
50
5V
0
100
5V
0
100
10000
1000
Capacitive Load (pF)
Time (ns)
10000
Capacitve Load (pF)
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
Fall Time vs. Capacitive
44
CLOAD = 470 pF
VDD = 12V
tRISE
26
tFALL
22
18
14
10
Propagation Delay (ns)
FIGURE 2-2:
Load.
30
18
Supply Voltage (V)
250
34
16
VDD= 12V
43
tD1
42
41
40
39
tD2
38
37
36
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
Temperature (oC)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
© 2007 Microchip Technology Inc.
5
6
7
8
9
10
Input Amplitude (V)
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
DS22052A-page 5
MCP1401/02
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
1.2
Quiescent Current (mA)
Propagation Delay (ns)
80
70
tD1
60
50
tD2
40
VDD = 18V
1.0
Input = 1
0.8
0.6
0.4
0.2
Input = 0
0.0
30
4
6
8
10
12
14
16
-40 -25 -10
18
5
Temperature (oC)
Supply Voltage (V)
FIGURE 2-7:
Supply Voltage.
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
VDD = 12V
55
Input Threshold (V)
Propagation Delay (ns)
Quiescent Current vs.
2.2
60
tD1
50
45
tD2
40
35
30
2.1
VHI
2
1.9
1.8
1.7
VLO
1.6
1.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
6
8
Temperature (oC)
FIGURE 2-8:
Temperature.
10
12
Propagation Delay Time vs.
FIGURE 2-11:
Voltage.
16
18
Input Threshold vs. Supply
2.4
VDD = 12V
2.3
Input Threshold (V)
1.0
Input = 1
0.8
0.6
0.4
Input = 0
0.2
14
Supply Voltage (V)
1.2
Quiescent Current (mA)
20 35 50 65 80 95 110 125
2.2
2.1
VHI
2
1.9
1.8
VLO
1.7
1.6
0.0
4
6
8
10
12
14
16
18
-40 -25 -10
Supply Voltage (V)
FIGURE 2-9:
Supply Voltage.
DS22052A-page 6
Quiescent Current vs.
5
20 35 50 65 80 95 110 125
Temperature (oC)
FIGURE 2-12:
Temperature.
Input Threshold vs.
© 2007 Microchip Technology Inc.
MCP1401/02
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
VDD = 18V
80
2 MHz
125
100
100 kHz
1 MHz
75
200 kHz
50
50 kHz
25
0
100
Supply Current (mA)
Supply Current (mA)
150
70
VDD = 18V
6,800 pF
60
3,300 pF
50
100 pF
40
30
10
0
1000
10000
10
100
Capacitive Load (pF)
FIGURE 2-13:
Capacitive Load.
60
Supply Current vs.
FIGURE 2-16:
Frequency.
50
VDD = 12V
2 MHz
1 MHz
50
50 kHz
40
100 kHz
30
200 kHz
20
10
0
100
VDD = 12V
470 pF
30
100 pF
20
1,000 pF
10
10
10000
Supply Current vs.
FIGURE 2-17:
Frequency.
25
VDD = 6V
2 MHz
25
100 kHz
1 MHz
20
50 kHz
200 kHz
10
5
0
100
1000
Supply Current vs.
VDD = 6V
6,800 pF
20
3,300 pF
15
470 pF
100 pF
10
1,000 pF
5
0
1000
10000
10
Capacitive Load (pF)
FIGURE 2-15:
Capacitive Load.
100
Frequency (kHz)
Supply Current (mA)
Supply Current (mA)
6,800 pF
3,300 pF
0
1000
FIGURE 2-14:
Capacitive Load.
15
Supply Current vs.
40
Capacitive Load (pF)
30
1000
Frequency (kHz)
Supply Voltage (V)
Supply Current (mA)
70
1,000 pF
470 pF
20
Supply Current vs.
© 2007 Microchip Technology Inc.
100
1000
Frequency (kHz)
FIGURE 2-18:
Frequency.
Supply Current vs.
DS22052A-page 7
MCP1401/02
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
1E-7
60
R OUT-HI (mΩ)
50
Crossover Energy (A*sec)
VIN = 0V (MCP1401)
VIN = 5V (MCP1402)
TJ = +125oC
40
30
20
TJ = +25oC
10
0
4
6
8
10
12
14
16
18
1E-8
1E-9
1E-10
4
Supply Voltage (V)
10
12
14
16
18
FIGURE 2-21:
Supply Voltage
Crossover Energy vs.
VIN = 5V (MCP1401)
VIN = 0V (MCP1402)
45
40
ROUT-LO (mΩ)
8
Supply Voltage (V)
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
50
6
TJ = +125oC
35
30
25
20
TJ = +25oC
15
10
5
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage
DS22052A-page 8
© 2007 Microchip Technology Inc.
MCP1401/02
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE (1)
SOT-23-5
Symbol
1
GND
2
VDD
Supply Input
3
IN
Control Input
4
GND
Ground
5
OUT
Output
Note 1:
3.1
Description
Ground
Duplicate pins must be connected for proper operation.
Supply Input (VDD)
3.3
Ground (GND)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are to be provided to the load.
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.2
3.4
Control Input (IN)
The MOSFET driver input is a high-impedance, TTL/
CMOS-compatible input. The input also has hysteresis
between the high and low input levels, allowing them to
be driven from slow rising and falling signals, and to
provide noise immunity.
© 2007 Microchip Technology Inc.
Output (OUT)
The output is a CMOS push-pull output that is capable
of sourcing and sinking 0.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. This output also has
a reverse current latch-up rating of 0.5A.
DS22052A-page 9
MCP1401/02
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
1 µF
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A MOSFET driver like the MCP1401/02 family can be used to
provide additional source/sink current capability.
4.2
Input
0.1 µF
Ceramic
Output
CL = 470 pF
MCP1402
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). The MCP1401/02 family of drivers
can typically charge and discharge a 470 pF load
capacitance in 19 ns along with a typical matched
propagation delay of 35 ns. Figure 4-1 and Figure 4-2
show the test circuit and timing waveform used to verify
the MCP1401/02 timing.
VDD = 18V
1 µF
+5V
Input
0V
18V
0.1 µF
Ceramic
MCP1401
90%
Input
0V 10%
18V
tD1
tF
tD2
tR
90%
90%
Output
0V
FIGURE 4-1:
Waveform.
10%
tD190%
10%
Inverting Driver Timing
tR
tD2
10%
0V
FIGURE 4-2:
Waveform.
Output
CL = 470 pF
+5V
10%
Output
4.3
Input
90%
90%
tF
10%
Non-Inverting Driver Timing
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, approximately
550 mA are needed to charge a 470 pF load with 18V
in 15 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver VDD and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 2 and 1 should be used. These
capacitors should be placed close to the driver to
minimized circuit board parasitics and provide a local
source for the required current.
4.4
PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP1401/02 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
DS22052A-page 10
© 2007 Microchip Technology Inc.
MCP1401/02
4.5
Power Dissipation
4.5.2
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
P T = P L + P Q + P CC
Where:
PT
=
Total power dissipation
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
PCC
=
Operating power dissipation
4.5.1
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1401/02 devices have a quiescent current
draw when the input is high of 850 mA (typ) and
100 mA (typ) when the input is low. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
P Q = ( I QH × D + I QL × ( 1 – D ) ) × V DD
Where:
EQUATION 4-2:
P L = f × C T × V DD
2
IQH
=
Quiescent current in the high
state
D
=
Duty cycle
IQL
=
Quiescent current in the low
state
VDD
=
MOSFET driver supply voltage
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is shown in Equation 4-2.
QUIESCENT POWER DISSIPATION
4.5.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation described in Equation 4-4.
Where:
f
=
Switching frequency
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
EQUATION 4-4:
P CC = CC × f × V DD
Where:
CC
© 2007 Microchip Technology Inc.
=
Cross-conduction constant
(A*sec)
f
=
Switching frequency
VDD
=
MOSFET driver supply voltage
DS22052A-page 11
MCP1401/02
5.0
PACKAGING INFORMATION
5.1
Package Marking Information (Not to Scale)
Example:
5-Lead SOT-23
Standard Markings for SOT-23
Part Number
XXNN
MCP1401T-E/OT
MCP1402T-E/OT
Code
GYNN
GYNN
GZNN
1
1
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS22052A-page 12
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2007 Microchip Technology Inc.
MCP1401/02
5-Lead Plastic Small Outline Transistor (OT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
5
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
1.90 BSC
1.45
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-091B
© 2007 Microchip Technology Inc.
DS22052A-page 13
MCP1401/02
NOTES:
DS22052A-page 14
© 2007 Microchip Technology Inc.
MCP1401/02
APPENDIX A:
REVISION HISTORY
Revision A (June 2007)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS22052A-page 15
MCP1401/02
NOTES:
DS22052A-page 16
© 2007 Microchip Technology Inc.
MCP1401/02
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
X
Device
Tape & Reel
Range
XX
Temperature Package
Range
Device:
MCP1401: 500 mA MOSFET Driver, Inverting
MCP1402: 500 mA MOSFET Driver, Non-Inverting
Tape and Reel
T = Tape and Reel
Temperature Range:
E
Package: *
=
Examples:
a)
MCP1401T-E/OT: 500 mA Inverting
MOSFET Driver,
5LD SOT-23 package.
a)
MCP1402T-E/OT
500 mA Non-Inverting,
MOSFET Driver,
5LD SOT-23 package,
-40°C to +125°C
OT = Plastic Thin Small Outline Transistor (OT) , 5-Lead
* All package offerings are Pb Free (Lead Free)
© 2007 Microchip Technology Inc.
DS22052A-page 17
MCP1401/02
NOTES:
DS22052A-page 18
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The
Embedded Control Solutions Company are registered
trademarks of Microchip Technology Incorporated in the
U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select
Mode, Smart Serial, SmartTel, Total Endurance, UNI/O,
WiperLock and ZENA are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS22052A-page 19
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Technical Support:
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Web Address:
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Tel: 886-7-536-4818
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Tel: 86-757-2839-5507
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Taiwan - Taipei
Tel: 886-2-2500-6610
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Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
06/25/07
DS22052A-page 20
© 2007 Microchip Technology Inc.