IRF IRGP4660DPBF

IRGP4660DPbF
IRGP4660D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
IC = 60A, TC = 100°C
C
C
tSC 5μs, TJ(max) = 175°C
G
VCE(on) typ. = 1.60V @ IC = 48A
E
n-channel
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
Gate
GC
E
E
GC
TO-247AD
IRGP4660D-EP
TO-247AC
IRGP4660DPbF
C
Collector
Features
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Base part number
Package Type
IRGP4660DPbF
IRGP4660D-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4660DPbF
IRGP4660D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V
V CES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
100
IC @ TC = 100°C
ICM
Continuous Collector Current
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
100
IF @ TC = 100°C
Diode Continous Forward Current
60
IFM
Diode Maximum Forward Current
192
V GE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
330
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
TSTG
Storage Temperature Range
Pulse Collector Current, VGE = 15V
e
60
144
c
192
A
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (Diode)
Junction-to-Case (IGBT) f
Junction-to-Case (Diode) f
RCS
RJA
RJC (IGBT)
1
Min.
Typ.
Max.
Units
°C/W
–––
–––
0.45
–––
–––
0.92
Case-to-Sink (flat, greased surface)
–––
0.24
–––
Junction-to-Ambient (typical socket mount)
–––
–––
40
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Parameter
600
—
V(BR)CE S/T J
T emperature Coeff. of B reakdown Voltage
—
—
Max. Units
—
V
0.30
—
V/°C
1.60
1.90
—
Collector-to-Emitter Saturation Voltage
—
1.90
—
2.00
—
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
VGE (th)/T J
Threshold Voltage temp. coefficient
—
-21
—
gfe
Forward Transconductance
—
32
—
S
ICES
Collector-to-Emitter Leakage Current
—
1.0
150
μA
—
450
1000
2.91
Diode Forward Voltage Drop
—
1.95
—
1.45
—
IGES
Gate-to-Emitter Leakage Current
—
—
±100
d
VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
VCE(on)
VFM
Conditions
VGE = 0V, IC = 150μA
V
IC = 48A, VGE = 15V, TJ = 150°C
V
VCE = VGE , IC = 1.4mA
IC = 48A, VGE = 15V, TJ = 175°C
mV/°C VCE = VGE , IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 48A, PW = 80μs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, T J = 175°C
V
IF = 48A
nA
VGE = ±20V
IF = 48A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
95
Max. Units
140
Conditions
Q ge
Gate-to-Emitter Charge (turn-on)
—
28
42
Q gc
Gate-to-Collector Charge (turn-on)
—
35
53
Eon
Turn-On Switching Loss
—
625
1141
Eoff
Turn-Off Switching Loss
—
1275
1481
Etotal
Total Switching Loss
—
1900
2622
td(on)
Turn-On delay time
—
60
78
tr
Rise time
—
40
56
td(off)
Turn-Off delay time
—
145
176
tf
Fall time
—
35
46
Eon
Turn-On Switching Loss
—
1625
—
Eoff
Turn-Off Switching Loss
—
1585
—
Etotal
Total Switching Loss
—
3210
—
E nergy los s es include tail & diode revers e recovery
td(on)
Turn-On delay time
—
55
—
IC = 48A, VCC = 400V, VGE = 15V
tr
Rise time
—
45
—
td(off)
Turn-Off delay time
—
165
—
IC = 48A
nC
VGE = 15V
VCC = 400V
IC = 48A, VCC = 400V, VGE = 15V
μJ
RG = 10, L = 200μH, LS = 150nH, T J = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 48A, VCC = 400V, VGE = 15V
ns
RG = 10, L = 200μH, LS = 150nH, T J = 25°C
IC = 48A, VCC = 400V, VGE =15V
μJ
ns
RG=10, L=200μH, LS=150nH, TJ = 175°C
RG = 10, L = 200μH, LS = 150nH
TJ = 175°C
tf
Fall time
—
45
—
Cies
Input Capacitance
—
3025
—
Coes
Output Capacitance
—
245
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
90
—
f = 1.0Mhz
pF
VGE = 0V
TJ = 175°C, IC = 192A
RBSOA
Reverse Bias Safe Operating Area
VCC = 480V, Vp =600V
FULL SQUARE
Rg = 10, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
VCC = 400V, Vp =600V
Rg = 10, VGE = +15V to 0V
Erec
Reverse Recovery Energy of the Diode
—
845
—
μJ
TJ = 175°C
trr
Diode Reverse Recovery Time
—
115
—
ns
VCC = 400V, IF = 48A
Irr
Peak Reverse Recovery Current
—
40
—
A
VGE = 15V, Rg = 10, L =200μH, Ls = 150nH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.
‚ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ƒ Pulse width limited by max. junction temperature.
„ Ris measured at TJ of approximately 90°C.
2
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
100
350
300
80
250
200
Ptot (W)
IC (A)
60
40
150
100
20
50
0
0
25
50
75
100
125
150
175
25
50
75
100
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
150
175
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10μsec
100
IC (A)
100μsec
IC (A)
125
T C (°C)
1msec
10
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
200
180
180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
160
100
80
120
100
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
ICE (A)
140
ICE (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
160
1000
www.irf.com © 2012 International Rectifier
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
200
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
180
160
160
140
120
-40°c
25°C
175°C
120
IF (A)
ICE (A)
140
180
100
100
80
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
18
16
16
14
14
ICE = 24A
ICE = 48A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
10
ICE = 96A
8
12
ICE = 24A
ICE = 48A
10
ICE = 96A
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
18
180
16
160
14
140
ICE = 24A
ICE = 48A
ICE = 96A
8
ICE (A)
VCE (V)
200
10
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
12
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
T J = 25°C
T J = 175°C
120
100
80
6
60
4
40
2
20
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
4.0
VF (V)
VCE (V)
12
3.0
www.irf.com © 2012 International Rectifier
0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
6000
1000
5000
Swiching Time (ns)
EOFF
Energy (μJ)
4000
EON
3000
2000
tdOFF
100
tdON
tF
tR
1000
0
10
0
50
100
150
0
20
40
60
80
100
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
5000
1000
4500
tdOFF
EOFF
Swiching Time (ns)
Energy (μJ)
4000
EON
3500
3000
2500
tR
tdON
100
tF
2000
1500
1000
10
0
25
50
75
100
125
0
25
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
100
125
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
45
40
40
RG = 10
35
35
30
RG = 22
25
20
IRR (A)
IRR (A)
75
RG ()
Rg ()
RG = 47
15
RG = 100
10
30
25
20
15
5
0
10
0
20
40
60
80
100
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
50
www.irf.com © 2012 International Rectifier
0
25
50
75
100
125
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
45
4000
40
3500
96A
3000
QRR (nC)
IRR (A)
35
30
25
2500
100
22
47
2000
20
10
48A
24A
1500
15
1000
10
0
200
400
600
800
0
1000
500
diF /dt (A/μs)
1500
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
18
400
RG = 10
16
350
RG = 22
14
300
12
250
10
200
8
150
6
100
900
800
1000
diF /dt (A/μs)
500
400
RG = 47
300
RG = 100
200
100
0
50
4
0
20
40
60
80
100
8
10
12
IF (A)
16
18
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
14
VGE (V)
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
1000
Coes
100
Cres
10
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
0
20
40
60
80
100
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
Current (A)
Energy (μJ)
600
Time (μs)
700
www.irf.com © 2012 International Rectifier
0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
J
R1
R1
J
1
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
2
1
R3
R3
3
2
C

3
Ri (°C/W) i (sec)
0.0872 0.000114
0.1599 0.001520
0.2020
Ci= iRi
Ci iRi
0.020330
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
J
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
R1
R1
J
1
1
R2
R2
2
R3
R3
3
2
Ci= iRi
Ci iRi
C

3
Ri (°C/W) i (sec)
0.2774 0.000908
0.3896
0.2540
0.003869
0.030195
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
DUT
C sense
VCC
Rg
22K
G force
DUT
0.0075μF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
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Fig.C.T.6 - BVCES Filter Circuit
January 8, 2013
140
700
140
600
120
600
120
500
100
500
400
80
400
60
90% ICE
200
40
tr
TEST
CURRENT
300
20
5% ICE
0
EOFF Loss
-100
-0.40
0.10
0.60
200
40
100
20
0
0
EON
-20
1.10
-100
6.20
6.40
6.60
6.80
-20
7.00
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
600
60
50
600
500
500
40
QRR
30
VCE (V)
10
0
-10
10%
Peak
IRR
Peak
IRR
-20
ICE
VCE
400
tRR
20
IRR (A)
5% V CE
10% test
current
Time(µs)
400
300
300
200
200
100
100
0
-30
-40
-0.15
-0.05
0.05
0.15
0.25
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
60
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ICE (A)
0
80
90% test
5% V CE
100
100
ICE (A)
tf
300
VCE (V)
700
I CE (A)
VCE (V)
IRGP4660DPbF/IRGP4660D-EPbF
0
-100
-5.00
0.00
5.00
-100
10.00
time (µS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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LQGLFDWHV/HDG)UHH
,17(51$7,21$/
5(&7,),(5
/2*2
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+
$66(0%/<
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'$7(&2'(
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
Qualification Information†
Industrial
Qualification Level
(per International Rectifier’s internal guidelines)
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
N/A
††
ESD
Class 2 (+/- 4000V )
Human Body Model
(per JEDEC JESD22-A114)
Charged Device Model
RoHS Compliant
Class IV (+/- 1125V )††
(per JEDEC JESD22-C101)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Highest passing voltage.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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