Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS840 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS840 features a 25mV offset and 20-µV/°C drift.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military and harsh environment
(See Packaging Information).
LS840 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated SingleEnded Input Amps
High-Speed Comparators
Impedance Converters and vibrations
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVGSS Breakdown Voltage 60 BVGGO Gate‐To‐Gate Breakdown 60 TRANSCONDUCTANCE YfSS Full Conduction 1000 YfS Typical Operation 500 |YFS1‐2 / Y FS| Mismatch ‐‐ DRAIN CURRENT IDSS Full Conduction 0.5 |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ GATE VOLTAGE VGS(off) or Vp Pinchoff voltage 1 VGS(on) Operating Range 0.5 GATE CURRENT ‐IGmax. Operating ‐‐ ‐IGmax. High Temperature ‐‐ ‐IGmax. Reduced VDG ‐‐ ‐IGSSmax. At Full Conduction ‐‐ OUTPUT CONDUCTANCE YOSS Full Conduction ‐‐ YOS Operating ‐‐ |YOS1‐2| Differential ‐‐ COMMON MODE REJECTION CMR ‐20 log | V GS1‐2/ V DS| ‐‐ ‐20 log | V GS1‐2/ V DS| ‐‐ NOISE NF Figure ‐‐ en Voltage ‐‐ ‐‐ CAPACITANCE CISS Input ‐‐ CRSS Reverse Transfer ‐‐ CDD Drain‐to‐Drain ‐‐ FEATURES LOW DRIFT | V GS1‐2 / T| ≤5µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2|= 2mV TYP. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 5 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 5 mV VDG=20V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 2 1 2 ‐‐ 10 ‐‐ 5 ‐‐ ‐‐ 0.1 0.01 100 75 ‐‐ ‐‐ ‐‐ 4 1.2 0.1 MAX. ‐‐ ‐‐ 4000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 10 1 0.1 ‐‐ ‐‐ 0.5 10 15 10 UNITS V V µmho µmho % mA % V V pA nA pA pA µmho µmho µmho dB CONDITIONS VDS = 0 ID=1nA I G= 1nA ID= 0 IS= 0 VDG= 20V VGS= 0V f = 1kHz VDG= 20V ID= 200µA VDG= 20V VGS= 0V VDS= 20V ID= 1nA VDS=20V ID=200µA VDG= 20V ID= 200µA TA= +125°C
VDG = 10V ID= 200µA VDG= 20V , VDS =0 VDG= 20V VGS= 0V VDG= 20V ID= 200µA Click To Buy
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
dB nV/√Hz 5 ‐‐ pF ∆VDS = 10 to 20V ID=200µA ∆VDS = 5 to 10V ID=200µA VDS= 20V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz VDS=20V ID=200µA f=1KHz NBW=1Hz VDS=20V ID=200µA f=10Hz NBW=1Hz VDS= 20V, ID=200µA TO-71 & TO-78 (Top View)
Available Packages:
LS840 / LS840 in TO-78 & TO-71
LS840 / LS840 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.