KEXIN KI1563DH

Transistors
IC
SMD Type
Complementary 20-V (D-S) Low-Threshold MOSFET
KI1563DH
SOT-363
1.3
Unit: mm
+0.1
-0.1
0.65
+0.15
2.3-0.15
TrenchFET Power MOSFETs
+0.1
1.25-0.1
0.525
Features
0.36
Fast Switching
+0.05
0.1-0.02
+0.05
0.95-0.05
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
5 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
V
V
1.13
-1
-0.88
A
0.92
0.81
-0.72
-0.63
A
0.61
0.48
-0.61
-0.48
A
0.74
0.57
0.3
0.57
W
0.38
0.3
0.16
0.3
W
4
IS
TA = 25
-20
1.28
IDM
Maximum Power Dissipation*
Unit
Steady State
8
TA = 85
Continuous Source Current (Diode Conduction)*
5 secs
20
ID
Pulsed Drain Current
P-Channel
Steady State
-3
A
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Symbol
t
5 sec
RthJA
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Typical
Maximum
130
170
170
220
80
100
Unit
/W
*Surface Mounted on 1" X1" FR4 Board.
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1
Transistors
IC
SMD Type
KI1563DH
Electrical Characteristics TJ= 25
Parameter
Testconditons
Symbol
VGS( th)
Gate Threshold Voltage
IGSS
Gate Body Leakage
ID(on)
On State Drain Current*
Drain Source On State Resistance*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
Rise Time
tr
td( off)
Turn Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
* Pulse test; pulse width
2
IDSS
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Typ
Max
N-Ch
0.45
1
VDS = VGS, ID = -100
P-Ch
-0.45
1
A
VDS = 0 V VGS = 8V
VDS = 16V, VGS = 0 V
Zero Gate Voltage Drain Current
Min
VDS = VGS, ID = 100 A
N-Ch
100
P-Ch
100
N-Ch
1
-1
VDS = -16V, VGS = 0 V
P-Ch
VDS = 16 V, VGS = 0 V, TJ = 85
N-Ch
5
VDS = -16V, VGS = 0 V, TJ = 85
P-Ch
-5
VDS
5 V, VGS = 4.5 V
N-Ch
2
VDS
-5 V, VGS = -4.5 V
P-Ch
-2
VGS = 4.5 V, ID = 1.13A
N-Ch
0.220 0.280
P-Ch
0.400 0.490
VGS = 2.5 V, ID = 0.99A
N-Ch
0.281 0.360
VGS = -2.5 V, ID = -0.71A
P-Ch
0.610 0.750
VGS = 1.8 V, ID = 0.2A
N-Ch
0.344 0.450
VGS = -1.8 V, ID = -0.20A
P-Ch
0.850
VDS = 10 V, ID = 1.13A
N-Ch
2.6
VDS = -10 V, ID = -0.88A
P-Ch
1.5
IS = 0.48A, VGS = 0 V
N-Ch
0.8
1.2
IS = -0.48A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Channel
N-Ch
1.25
2
VDS = 10 V, VGS = 4.5V, ID = 1.13A
P-Ch
1.2
1.8
N-Ch
0.21
P-Channel
P-Ch
0.3
VDS = -10 V, VGS = -4.5 V, ID = -0.88A
N-Ch
0.3
P-Ch
0.21
N-Ch
15
25
VDD = 10 V, RL = 20
P-Ch
18
30
ID= 0.5 A, VGEN = 4.5V, Rg = 6
N-Ch
22
35
P-Ch
25
40
P-Channel
N-Ch
25
40
VDD = -10 V, RL = 20
P-Ch
15
25
ID= -0.5 A, VGEN = -4.5 V, Rg = 6
N-Ch
12
20
P-Ch
12
20
IF = 0.48 A, di/dt = 100 A/
300 s, duty cycle 2%.
s
V
nA
A
A
VGS = -4.5 V, ID = -0.88A
N Channel
Unit
1.10
mS
V
pC
N-Ch
30
60
P-Ch
30
60
ns