Transistors IC SMD Type Complementary 20-V (D-S) Low-Threshold MOSFET KI1563DH SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 TrenchFET Power MOSFETs +0.1 1.25-0.1 0.525 Features 0.36 Fast Switching +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range V V 1.13 -1 -0.88 A 0.92 0.81 -0.72 -0.63 A 0.61 0.48 -0.61 -0.48 A 0.74 0.57 0.3 0.57 W 0.38 0.3 0.16 0.3 W 4 IS TA = 25 -20 1.28 IDM Maximum Power Dissipation* Unit Steady State 8 TA = 85 Continuous Source Current (Diode Conduction)* 5 secs 20 ID Pulsed Drain Current P-Channel Steady State -3 A -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 130 170 170 220 80 100 Unit /W *Surface Mounted on 1" X1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1563DH Electrical Characteristics TJ= 25 Parameter Testconditons Symbol VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage ID(on) On State Drain Current* Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 IDSS www.kexin.com.cn Typ Max N-Ch 0.45 1 VDS = VGS, ID = -100 P-Ch -0.45 1 A VDS = 0 V VGS = 8V VDS = 16V, VGS = 0 V Zero Gate Voltage Drain Current Min VDS = VGS, ID = 100 A N-Ch 100 P-Ch 100 N-Ch 1 -1 VDS = -16V, VGS = 0 V P-Ch VDS = 16 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -16V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 2 VDS -5 V, VGS = -4.5 V P-Ch -2 VGS = 4.5 V, ID = 1.13A N-Ch 0.220 0.280 P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99A N-Ch 0.281 0.360 VGS = -2.5 V, ID = -0.71A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.2A N-Ch 0.344 0.450 VGS = -1.8 V, ID = -0.20A P-Ch 0.850 VDS = 10 V, ID = 1.13A N-Ch 2.6 VDS = -10 V, ID = -0.88A P-Ch 1.5 IS = 0.48A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.48A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 1.25 2 VDS = 10 V, VGS = 4.5V, ID = 1.13A P-Ch 1.2 1.8 N-Ch 0.21 P-Channel P-Ch 0.3 VDS = -10 V, VGS = -4.5 V, ID = -0.88A N-Ch 0.3 P-Ch 0.21 N-Ch 15 25 VDD = 10 V, RL = 20 P-Ch 18 30 ID= 0.5 A, VGEN = 4.5V, Rg = 6 N-Ch 22 35 P-Ch 25 40 P-Channel N-Ch 25 40 VDD = -10 V, RL = 20 P-Ch 15 25 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 N-Ch 12 20 P-Ch 12 20 IF = 0.48 A, di/dt = 100 A/ 300 s, duty cycle 2%. s V nA A A VGS = -4.5 V, ID = -0.88A N Channel Unit 1.10 mS V pC N-Ch 30 60 P-Ch 30 60 ns