Transistors IC IC SMD Type Product specification KI5515DC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Maximum Power Dissipation* TA = 25 IS PD TA = 85 Operating Junction and Storage Temperature Range 5 secs 20 Unit Steady State -20 V 8 V 5.9 4.4 -4.1 -3 A 4.2 3.1 -2.9 -2.2 A 1.8 0.9 -1.8 -0.9 A 2.1 1.1 2.1 1.1 W 1.1 0.6 1.1 0.6 W 20 IDM Continuous Source Current (Diode Conduction)* P-Channel Steady State -15 A -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Symbol t Maximum Junction-to-Ambient* 5 sec RthJA Steady State Maximum Junction-to-Case (Drain) Steady State RthJF Typ Max 50 60 90 110 30 40 Unit /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC Transistors IC SMD Type Product specification KI5515DC Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage Gate Body Leakage IGSS Zero Gate Voltage Drain Current On State Drain Currenta IDSS ID(on) Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) tr Rise Time td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width Testconditons Symbol Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.4 1.0 VDS = VGS, ID = -250 P-Ch -0.4 -1.0 A VDS = 0 V VGS = 8 V N-Ch 100 VDS = 0 V VGS = 8V P-Ch 100 VDS = 20V, VGS = 0 V N-Ch 1 -1 VDS = -20V, VGS = 0 V P-Ch VDS = 20 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -20V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 20 VDS -5 V, VGS = -4.5 V P-Ch -15 N-Ch 0.032 0.040 VGS = -4.5 V, ID = -3.0A P-Ch 0.069 0.086 VGS = 2.5 V, ID = 4.1A N-Ch 0.036 0.045 0.097 0.121 VGS = -2.5 V, ID = -2.5A P-Ch VGS = 1.8 V, ID = 1.9A N-Ch 0.042 0.052 VGS = -1.8 V, ID = -0.6A P-Ch 0.137 0.171 VDS = 10 V, ID = 4.4A N-Ch 22 VDS = -10 V, ID = -3A P-Ch 8 IS = 0.9A, VGS = 0 V N-Ch 0.8 1.2 P-Ch -0.8 -1.2 N-Channel N-Ch 5 7.5 VDS = 10V, VGS = 4.5V, ID = 4.4A P-Ch 5.5 8.5 N-Ch 0.85 P-Channel P-Ch 0.91 VDS = -10 V, VGS = -4.5 V, ID = -3A N-Ch 1 P-Ch 1.6 N-Ch 20 30 VDD = 10 V, RL = 10 P-Ch 18 30 ID= 1A, VGEN = 4.5V, Rg = 6 N-Ch 36 55 P-Ch 32 50 N-Ch 30 45 VDD = -10 V, RL = 10 P-Ch 42 65 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 12 20 P-Ch 26 40 IF = -0.9 A, di/dt = 100 A/ s A V nC P-Channel s nA S IS = -0.9A, VGS = 0 V IF =0.9 A, di/dt = 100 A/ V A VGS = 4.5 V, ID = 4.4A N Channel Unit N-Ch 45 90 P-Ch 30 60 ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2