TYSEMI KQS4900

Transistors
IC
IC
SMD Type
Product specification
KQS4900
Features
N-Channel
1.3 A, 60 V
RDS(ON) = 0.55
RDS(ON) = 0.65
@ VGS = 10 V
@ VGS =5V
P-Channel
-0.3 A, -300V RDS(ON) = 15.5
RDS(ON) = 16
@ VGS =- 10V
@ VGS =-5V
Low gate charge ( typical N-Channel 1.6 nC)
( typical P-Channel 3.6 nC)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings Ta = 25
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
Parameter
VDSS
60
-300
V
Gate to Source Voltage
VGS
1.3
-0.3
-0.19
IDM
5.2
-1.2
A
dv/dt
7
4.5
V/ns
ID
Ta = 70
*1
Peak Diode Recovery dv/dt
Power Dissipation for Single Operation Ta = 25
PD
Ta = 70
Operating and Storage Temperature
Thermal Resistance Junction to Ambient
V
0.82
Drain Current Continuous Ta = 25
Drain Current Pulsed
20
TJ, TSTG
R
JA
2
A
W
1.3
-55 to 150
62.5
/W
*1Repetitive Rating : Pulse width limited by maximum junction temperature
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
IC
Transistors
SMD Type
Product specification
KQS4900
Electrical Characteristics Ta = 25
Parameter
Testconditons
Symbol
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
Min
A
VGS = 0 V, ID = -250
A
VDS = 60V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS(on)
Static Drain-Source On-Resistance
Forward Transconductance
RDS(on)
gFS
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDS = -300 V, VGS = 0 V
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Maximum Continuous Drain-Source
Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
* Pulse Test : Pulse width
300 s, Duty cycle
http://www.twtysemi.com
P-Ch
-300
Typ
Max
1
10
-1
-10
VGS =
20V, VDS = 0 V
N-Ch
100
VGS =
20 V, VDS = 0 V
P-Ch
100
VDS = 4V, ID = 20mA
N-Ch
1.0
1.95
VDS = 4V, ID = -20mA
P-Ch
-1.0
-1.95
VGS = 10 V, ID =0.65A
N-Ch
VGS = 5 V, ID = 0.65A
VGS = -10 V, ID =-0.15 A
P-Ch
VGS = -5 V, ID =-0.15 A
0.39
0.65
11.2
15.5
11.4
16
N-Ch
1.7
VDS = -10V, ID = -0.15A
P-Ch
0.6
N-Ch
5.7
21
P-Ch
10
30
VDD = 30 V, ID = 1.3 A,RG=25
*
P-Channel
*
21
50
P-Ch
25
60
N-Ch
11
32
P-Ch
35
80
N-Ch
17
45
P-Ch
47
105
N-Channel
N-Ch
1.6
2.1
VDS =48V,ID=1.3A,VGS=5V *
P-Ch
3.6
4.7
0.28
P-Channel
P-Ch
0.42
VDS=-240V,ID=-30.3A,VGS=-5V *
N-Ch
0.82
P-Ch
2.1
A
nA
V
S
N-Ch
N-Ch
A
0.55
0.46
VDS = 10V, ID = 0.65A
N-Channel
Unit
V
P-Ch
VDD = -150 V, ID = -0.3 A,RG=25
Turn-Off Fall Time
60
N-Ch
VDS = 48 V, TC = 55
VDS = -240 V, TC = 55
Gate-Body Leakage
N-Ch
ns
ns
ns
ns
nC
nC
nC
N-Ch
1.3
P-Ch
-0.3
VGS = 0 V, IS = 1.3A
N-Ch
1.5
VGS = 0 V, IS = -0.3A
P-Ch
-4.0
A
V
2%
[email protected]
4008-318-123
2 of 2