Transistors IC IC SMD Type Product specification KQS4900 Features N-Channel 1.3 A, 60 V RDS(ON) = 0.55 RDS(ON) = 0.65 @ VGS = 10 V @ VGS =5V P-Channel -0.3 A, -300V RDS(ON) = 15.5 RDS(ON) = 16 @ VGS =- 10V @ VGS =-5V Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC) Fast switching Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 60 -300 V Gate to Source Voltage VGS 1.3 -0.3 -0.19 IDM 5.2 -1.2 A dv/dt 7 4.5 V/ns ID Ta = 70 *1 Peak Diode Recovery dv/dt Power Dissipation for Single Operation Ta = 25 PD Ta = 70 Operating and Storage Temperature Thermal Resistance Junction to Ambient V 0.82 Drain Current Continuous Ta = 25 Drain Current Pulsed 20 TJ, TSTG R JA 2 A W 1.3 -55 to 150 62.5 /W *1Repetitive Rating : Pulse width limited by maximum junction temperature http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC Transistors SMD Type Product specification KQS4900 Electrical Characteristics Ta = 25 Parameter Testconditons Symbol Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 Min A VGS = 0 V, ID = -250 A VDS = 60V, VGS = 0 V Zero Gate Voltage Drain Current IDSS IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(on) Static Drain-Source On-Resistance Forward Transconductance RDS(on) gFS Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS = -300 V, VGS = 0 V tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD * Pulse Test : Pulse width 300 s, Duty cycle http://www.twtysemi.com P-Ch -300 Typ Max 1 10 -1 -10 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 20 V, VDS = 0 V P-Ch 100 VDS = 4V, ID = 20mA N-Ch 1.0 1.95 VDS = 4V, ID = -20mA P-Ch -1.0 -1.95 VGS = 10 V, ID =0.65A N-Ch VGS = 5 V, ID = 0.65A VGS = -10 V, ID =-0.15 A P-Ch VGS = -5 V, ID =-0.15 A 0.39 0.65 11.2 15.5 11.4 16 N-Ch 1.7 VDS = -10V, ID = -0.15A P-Ch 0.6 N-Ch 5.7 21 P-Ch 10 30 VDD = 30 V, ID = 1.3 A,RG=25 * P-Channel * 21 50 P-Ch 25 60 N-Ch 11 32 P-Ch 35 80 N-Ch 17 45 P-Ch 47 105 N-Channel N-Ch 1.6 2.1 VDS =48V,ID=1.3A,VGS=5V * P-Ch 3.6 4.7 0.28 P-Channel P-Ch 0.42 VDS=-240V,ID=-30.3A,VGS=-5V * N-Ch 0.82 P-Ch 2.1 A nA V S N-Ch N-Ch A 0.55 0.46 VDS = 10V, ID = 0.65A N-Channel Unit V P-Ch VDD = -150 V, ID = -0.3 A,RG=25 Turn-Off Fall Time 60 N-Ch VDS = 48 V, TC = 55 VDS = -240 V, TC = 55 Gate-Body Leakage N-Ch ns ns ns ns nC nC nC N-Ch 1.3 P-Ch -0.3 VGS = 0 V, IS = 1.3A N-Ch 1.5 VGS = 0 V, IS = -0.3A P-Ch -4.0 A V 2% [email protected] 4008-318-123 2 of 2