Transistors Transistors IC SMD Type SMD Type Product specification 2SC4672 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 +0.1 4.00-0.1 +0.1 1.80-0.1 Features +0.1 0.53-0.1 +0.1 0.48-0.1 2.60 +0.1 -0.1 Excellent DC Current Gain Characteristics +0.1 0.44-0.1 +0.1 0.80-0.1 Low Saturation Voltage, Typically VCE(sat) = 0.1V at IC/IB = 1A/50mA 1. Base +0.1 3.00-0.1 0.40 +0.1 -0.1 Complements the 2SA1797 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V IC Collector Current Collector Power Dissipation 3 A (DC) 6 A (Pulse) *1 0.5 PC W 2 *2 Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range *1 Single Pulse, PW = 10ms *2 40 x 40 x t 0.7mm Ceramic board Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter Symbol ICBO VCB = 60V Testconditons Min Typ 0.1 A Emitter Cut-off Current IEBO VEB = 5V 0.1 A Collector-Base Breakdown Voltage V(BR)CBO IC = 50uA 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA 50 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 50uA 6 V DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transistion frequency Collector Output Capacitance hFE VCE = 2V , IC = 0.5A * 82 VCE = 2V , IC = 1.5A * 45 VCE(sat) IC = 1A , IB = 50mA fT Cob * 270 0.13 0.35 V VCE = 2V , IE = -0.5A , f = 100MHz 210 MHz VCB = 10V , IE = 0 , f = 1MHz 25 pF * Measured using pulse current. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Transistors IC SMD Type SMD Type Product specification 2SC4672 hFE Classification DK Marking Rank P hFE 82 Q 180 120 270 Electrical Characteristics Curves 5000 10 V CE = 2V V CE = -2V 5 1000 DC CURRENT GAIN : h FE COLLECTOR CURRENT : IC (A) 2000 Ta = 25 2 1 0.5 0.2 Ta = 100 0.1 Ta = -40 0.05 0.02 Ta = 100 500 Ta = 25 200 100 Ta = -40 50 0.01 20 5m 10 2m 5 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1m 2m 1.4 5m 0.01 0.02 0.05 0.2 0.5 10 I C /I B = 20 Pw = 1ms* Pw = 10ms* COLLECTOR CURRENT : I C (A) 2 Ta = 100 Ta = 25 0.1 Ta = -40 0.02 1 500m Pw = 100ms* 200m 100m DC 50m 20m 10m 5m Ta = 25 * Single NONREPETITIVE PULSE 2m 1m 0.01 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Ic Max. (Pulse*) 5 0.5 0.05 2 DC current gain vs. Collector current 1 0.2 1 COLLECTOR CURRENT : I C (A) BASE TO EMITTER VOLTAGE : V BE (V) Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.1 5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : I C (A) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Collector-emitter saturation voltage vs. Collector current Safe Operating area http://www.twtysemi.com [email protected] 4008-318-123 2 of 2