Transistors SMD Type PNP Transistors 2SB1427 1.70 0.1 ■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector Current - Pulse ICP -3 Collector Power Dissipation PC Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range 0.5 2 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -6 Collector-base cut-off current ICBO VCB= -16V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.5 Unit V Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50 mA -1.2 V DC current gain hFE VCE= -6V, IC= -500 mA Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 30 pF VCE= -10V, IE = 10 mA,f=100MHz 90 MHz Transition frequency fT 390 uA 820 ■ Marking Marking BJ * www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1427 ■ Typical Characterisitics −5A −2A DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC(mA) 5k Ta=25° C VCE= −2V −1A −500 −200 −100 −50 −20 −10 −5 −2 −1 −0 −0.5 −1.0 −1.5 VCE= −6V 2k 1k Ta=100° C 25° C 500 −50° C 200 100 50 20 −1m BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) 10 5 Ic Max. (Pulse ) Pw=10ms 2 1 500m Pw=100ms DC 200m 100m 50m 20m 10m 5m 2m Ta=25° C Single NONREPETITIVE PULS 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Safe Operating area 2 www.kexin.com.cn −100m −1 −10 COLLECTOR CURRENT : IC (A) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Grounded emitter propagation characteristics −10m −1 Ta=25° C IC/IB=20 −500m −200m −100m −50m −20m −10m −5m −2m −1m −1m −10m −100m −1 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current −10