Ordering number : EN2040C 2SB1122 Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons Voltage regulators relay drivers, lamp drivers, electrical equipment • Features Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid IC’s • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings VCBO VCEO Collector to Emitter Voltage Emitter to Base Voltage Unit --60 V --50 V VEBO IC ICP Collector Current Collector Current (Pulse) --5 V --1 A --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 4.5 1.6 1 2 Marking BE Packing Type: TD 4.0 1.0 2.5 1.5 2SB1122S-TD-E 2SB1122T-TD-E TD LOT No. Top View RANK 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 December, 2013 D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/4 2SB1122 Continued from preceding page. Parameter Symbol Collector Dissipation Conditions Ratings When mounted on ceramic substrate (250mm2×0.8mm) Junction Temperature PC Tj Storage Temperature Tstg Unit 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO hFE1 VCE=--2V, IC=--100mA 140* hFE2 fT VCE=--2V, IC=--1A VCE=--10V, IC=--50mA 30 Gain-Bandwidth Product Output Capacitance Cob Collector to Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=--10V, f=1MHz IC=--500mA, IB=--50mA Emitter Cutoff Current DC Current Gain Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VCB=--50V, IE=0A --100 nA VEB=--4V, IC=0A --100 nA 400* 150 MHz 12 IC=--500mA, IB=--50mA IC=--10μA, IE=0A IC=--1mA, RBE=∞ V(BR)CBO V(BR)CEO Unit max V(BR)EBO ton IE=--10μA, IC=0A tstg tf See specified Test Circuit. pF --180 --500 --0.9 --1.2 mV V --60 V --50 V --5 V 40 ns 300 ns 30 ns * : 2SB1122 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT IB2 OUTPUT RB VR RL 50Ω 50Ω + 470μF + 100μF VBE=5V VCC= --25V IC=10IB1= --10IB2= --500mA Ordering Information Package Shipping 2SB1122S-TD-E Device PCP 1,000pcs./reel 2SB1122T-TD-E PCP 1,000pcs./reel IC -- VCE 0mA mA --1 IC -- VBE VCE= --2V --8mA --1000 --0.8 --6mA --4mA --0.6 --0.4 --2mA --1mA --0.2 --800 --600 --400 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 2 --1 Pb Free --1200 Collector Current, IC -- mA --1.0 memo --200 IB=0mA 0 0 --1 --2 --3 --4 Collector to Emitter Voltage, VCE -- V 0 --5 ITR08877 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 ITR08879 No.2040-2/4 2SB1122 hFE -- IC 1000 Gain-Bandwidth Product, f T -- MHz 7 5 DC Current Gain, hFE 25°C Ta=75°C 3 2 --25°C 100 7 5 3 2 10 f T -- IC 5 VCE= --2V 7 5 VCE= --10V 3 2 100 7 5 3 2 10 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 3 Cob -- VCB 5 5 7 2 --10 5 7 --100 2 Collector to Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 2 10 7 5 3 2 7 --1.0 2 3 5 7 2 --10 3 3 2 °C 25 --100 7 5°C 7 Ta= 5 °C --25 3 2 5 5 7 --100 ITR08884 Collector to Base Voltage, VCB -- V 3 IC / IB=10 7 2 Collector Current, IC -- A 2 25°C Ta= --25°C --1.0 7 75°C 5 2 3 5 7 --100 2 3 5 7 --1000 2 ITR08885 SOA ICP= --2A --1.0 10 ms 10 IC= --1A 0m s s 1m 5 3 7 --10 Collector Current, IC -- mA VBE(sat) -- IC --10 Base to Emitter Saturation Voltage, VBE(sat) -- V 5 --10 5 7 5 DC 3 op era 2 tio n --0.1 7 5 3 3 2 2 --0.01 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 ITR08887 PC -- Ta 1.4 1.3 Ta=25°C Single pulse When mounted on ceramic substrate (250mm2✕0.8mm) 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector to Emitter Voltage, VCE -- V 7 --100 ITR08889 W he 1.2 Collector Dissipation, PC -- W 5 IC / IB=10 7 3 3 ITR08883 VCE(sat) -- IC --1000 f=1MHz 3 Collector Current, IC -- mA ITR08881 n m ou nt 1.0 ed on ce ra 0.8 m ic su bs tra 0.6 te 0.5 No 0.4 (2 50 heat m sink m2 ✕ 0. 8m m 0.2 ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08890 No.2040-3/4 2SB1122 Outline Drawing 2SB1122S-TD-E, 2SB1122T-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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