2SB1122 - ON Semiconductor

Ordering number : EN2040C
2SB1122
Bipolar Transistor
–50V, –1A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
Voltage regulators relay drivers, lamp drivers, electrical equipment
•
Features
Adoption of FBET process
Ultrasmall size making it easy to provide high-density hybrid IC’s
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector to Emitter Voltage
Emitter to Base Voltage
Unit
--60
V
--50
V
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
--5
V
--1
A
--2
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
4.5
1.6
1
2
Marking
BE
Packing Type: TD
4.0
1.0
2.5
1.5
2SB1122S-TD-E
2SB1122T-TD-E
TD
LOT No.
Top View
RANK
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/4
2SB1122
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
Conditions
Ratings
When mounted on ceramic substrate (250mm2×0.8mm)
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Unit
1.3
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
typ
ICBO
IEBO
hFE1
VCE=--2V, IC=--100mA
140*
hFE2
fT
VCE=--2V, IC=--1A
VCE=--10V, IC=--50mA
30
Gain-Bandwidth Product
Output Capacitance
Cob
Collector to Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=--10V, f=1MHz
IC=--500mA, IB=--50mA
Emitter Cutoff Current
DC Current Gain
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
VCB=--50V, IE=0A
--100
nA
VEB=--4V, IC=0A
--100
nA
400*
150
MHz
12
IC=--500mA, IB=--50mA
IC=--10μA, IE=0A
IC=--1mA, RBE=∞
V(BR)CBO
V(BR)CEO
Unit
max
V(BR)EBO
ton
IE=--10μA, IC=0A
tstg
tf
See specified Test Circuit.
pF
--180
--500
--0.9
--1.2
mV
V
--60
V
--50
V
--5
V
40
ns
300
ns
30
ns
* : 2SB1122 is classified by 100mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
IB2
OUTPUT
RB
VR
RL
50Ω
50Ω
+
470μF
+
100μF
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --500mA
Ordering Information
Package
Shipping
2SB1122S-TD-E
Device
PCP
1,000pcs./reel
2SB1122T-TD-E
PCP
1,000pcs./reel
IC -- VCE
0mA
mA
--1
IC -- VBE
VCE= --2V
--8mA
--1000
--0.8
--6mA
--4mA
--0.6
--0.4
--2mA
--1mA
--0.2
--800
--600
--400
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
2
--1
Pb Free
--1200
Collector Current, IC -- mA
--1.0
memo
--200
IB=0mA
0
0
--1
--2
--3
--4
Collector to Emitter Voltage, VCE -- V
0
--5
ITR08877
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base to Emitter Voltage, VBE -- V
--1.2
ITR08879
No.2040-2/4
2SB1122
hFE -- IC
1000
Gain-Bandwidth Product, f T -- MHz
7
5
DC Current Gain, hFE
25°C
Ta=75°C
3
2
--25°C
100
7
5
3
2
10
f T -- IC
5
VCE= --2V
7
5
VCE= --10V
3
2
100
7
5
3
2
10
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
3
Cob -- VCB
5
5
7
2
--10
5
7 --100
2
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
2
10
7
5
3
2
7 --1.0
2
3
5
7
2
--10
3
3
2
°C
25
--100
7
5°C
7
Ta=
5
°C
--25
3
2
5
5
7 --100
ITR08884
Collector to Base Voltage, VCB -- V
3
IC / IB=10
7
2
Collector Current, IC -- A
2
25°C
Ta= --25°C
--1.0
7
75°C
5
2
3
5
7 --100
2
3
5 7 --1000
2
ITR08885
SOA
ICP= --2A
--1.0
10
ms
10
IC= --1A
0m
s
s
1m
5
3
7 --10
Collector Current, IC -- mA
VBE(sat) -- IC
--10
Base to Emitter
Saturation Voltage, VBE(sat) -- V
5
--10
5
7
5
DC
3
op
era
2
tio
n
--0.1
7
5
3
3
2
2
--0.01
5
7 --10
2
3
5
7 --100
2
3
5 7 --1000
Collector Current, IC -- mA
2
ITR08887
PC -- Ta
1.4
1.3
Ta=25°C Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
5
7 --1.0
2
3
5
7
--10
2
3
5
Collector to Emitter Voltage, VCE -- V
7 --100
ITR08889
W
he
1.2
Collector Dissipation, PC -- W
5
IC / IB=10
7
3
3
ITR08883
VCE(sat) -- IC
--1000
f=1MHz
3
Collector Current, IC -- mA
ITR08881
n
m
ou
nt
1.0
ed
on
ce
ra
0.8
m
ic
su
bs
tra
0.6
te
0.5
No
0.4
(2
50
heat
m
sink
m2
✕
0.
8m
m
0.2
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08890
No.2040-3/4
2SB1122
Outline Drawing
2SB1122S-TD-E, 2SB1122T-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
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PS No.2040-4/4