Ordering number : EN6147E CPH3212 Bipolar Transistor 50V, 5A, Low VCE(sat), NPN Single CPH3 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO IC Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP IB PC Base Current Collector Dissipation Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2×0.8mm) 100 V 100 V 50 V 6 V 5 A 7 A 1.2 A 0.9 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3212-TL-E 0.6 2.9 0.15 Packing Type: TL 0.05 LOT No. 0.2 CM 3 1.6 2.8 Marking 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 CPH3 1 2 Semiconductor Components Industries, LLC, 2013 September, 2013 N1504 TSIM TB-00000305/91003 TSKT TA-4228/63003TS KTTA-4189/71299TS (KOTO) TA-1762 No.6147-1/6 62012 TKIM/62005EA MSIM TB-00001408/ CPH3212 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=500mA VCE=10V, IC=500mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=2A, IB=40mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Ratings Conditions min typ Unit max 200 0.1 μA 0.1 μA 560 330 MHz 26 IC=2A, IB=40mA pF 100 150 mV 0.80 1.2 V V(BR)CBO V(BR)CES IC=10μA, IE=0A 100 V IC=100μA, RBE=0Ω 100 V V(BR)CEO V(BR)EBO IC=1mA, RBE=∞ 50 V IE=10μA, IC=0A 6 Storage Time ton tstg Fall Time tf V See specified Test Circuit. 32 ns 420 ns 28 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB 24Ω 50Ω + 100μF VBE= --5V + 470μF VCC=12V IC=20IB1= --20IB2=2.5A Ordering Information Shipping memo CPH3 3,000pcs./reel Pb Free IC -- VCE VCE=2V 40mA 0.9 30mA 0.8 3 10mA 100 mA 2 1 0.7 0.6 0.5 0.4 0.3 0.2 --25°C 20mA C 5 25°C 4 IC -- VBE 1.0 0mA Collector Current, IC -- A 60m A 70 mA 80m A 90m A 5 Collector Current, IC -- A Package Ta=75 ° Device CPH3212-TL-E 0.1 IB=0mA 0 0 100 200 300 400 Collector-to-Emitter Voltage, VCE -- mV 500 IT06514 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Base-to-Emitter Voltage, VBE -- V 0.8 0.9 IT06516 No.6147-2/6 CPH3212 hFE -- IC 1000 VCE=2V DC Current Gain, hFE 5 Ta=75°C 25°C --25°C 2 100 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 7 5 3 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 100 IT06522 5 3 2 100 7 5 = Ta 3 2 °C 75 25 °C --25 2 3 5 7 0.1 2 3 °C 5 7 1.0 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 3 2 100 7 C 75° Ta= 5 3 25 --25°C 2 10 0.01 2 3 5 7 0.1 2 3 °C 5 7 1.0 2 3 VBE(sat) -- IC IC / IB=50 Collector Current, IC -- A s era s s op s 1.0 7 5 0m 1m DC ms 10 0μ 10 0μ 50 Collector Current, IC -- A ICP=7A IC=5A 3 2 tio n 3 2 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 Ta= --25°C 7 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 25°C 75°C 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06528 PC -- Ta 1.2 10 10 7 5 1000 Collector Current, IC -- A ASO 2 2 2 0.01 5 7 10 IT06526 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 5 7 10 IT06524 Collector Current, IC -- A 3 7 5 IC / IB=20 IC / IB=50 1000 3 IT06520 VCE(sat) -- IC 10 0.01 7 VCE(sat) -- IC 2 100 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 100 2 2 1000 f=1MHz 10 1.0 3 Collector Current, IC -- A Cob -- VCB 2 5 10 0.01 5 7 10 IT06518 Collector Current, IC -- A VCE=10V 7 Gain-Bandwidth Product, f T -- MHz 7 3 f T -- IC 1000 1.0 M 0.9 ou nte 0.8 do na ce ram 0.6 ic bo ard 0.4 (6 0 0m m2 ✕0 .8m 0.2 m) 0 5 7 100 IT06529 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06530 No.6147-3/6 CPH3212 Embossed Taping Specification CPH3212-TL-E No.6147-4/6 CPH3212 Outline Drawing CPH3212-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.6147-5/6 CPH3212 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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