TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2553-Q1 FEATURES 1 • • 2 • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C3B Up to 1.5 A Maximum Load Current ±6% Current-Limit Accuracy at 1.7 A (typ) Meets USB Current-Limiting Requirements Backwards Compatible with TPS2550/51 Adjustable current-limit, 75 mA–1300 mA (typ) Constant-Current (TPS2553-Q1) • • • • • • • • Fast Overcurrent Response - 2-μs (typ) 85-mΩ High-Side MOSFET (DBV Package) Reverse Input-Output Voltage Protection Operating Range: 2.5 V to 6.5 V Built-in Soft-Start 15 kV ESD Protection per IEC 61000-4-2 (with External Capacitance) UL Listed – File No. E169910 and NEMKO IEC60950-1-am1 ed2.0 See the TI Switch Portfolio APPLICATIONS • • • Automotive Power Distribution Current Limiting DESCRIPTION The TPS2553-Q1 power-distribution switches are intended for applications where precision current-limiting is required or heavy capacitive loads and short circuits are encountered and provide up to 1.5 A of continuous load current. These devices offer a programmable current-limit threshold between 75 mA and 1.7 A (typ) via an external resistor. Current-limit accuracy as tight as ±6% can be achieved at the higher current-limit settings. The power-switch rise and fall times are controlled to minimize current surges during turn on/off. TPS2553-Q1 devices limit the output current to a safe level by using a constant-current mode when the output load exceeds the current-limit threshold. An internal reverse- voltage comparator disables the power- switch when the output voltage is driven higher than the input to protect devices on the input side of the switch. The FAULT output asserts low during overcurrent and reverse-voltage conditions. TPS2553-Q1 DRV PACKAGE (TOP VIEW) OUT ILIM FAULT 1 2 3 PAD 6 IN 5 GND 4 EN TPS2553-Q1 DBV PACKAGE (TOP VIEW) IN GND EN 1 2 3 6 5 4 EN = Active Low for the TPS2553-Q1 EN = Active High for the TPS2553-Q1 Add -1 to part number for lach-off version 5V USB Input OUT ILIM FAULT TPS2553-Q1 0.1 mF USB Data IN OUT USB Port RFAULT 100 kW 120 mF Fault Signal Control Signal FAULT EN ILIM GND Power Pad RILIM 20 kW USB requirement only* *USB requirement that downstream facing ports are bypassed with at least 120 mF per hub Figure 1. Typical Application as USB Power Switch 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) TA (2) –40°C to 125°C (1) (2) 2 ENABLE ORDERABLE PART NUMBER TOP-SIDE MARKING TPS2553QDRVRQ1 Preview TPS2553QDBVRQ1 PYEQ Active high RECOMMENDED MAXIMUM CONTINUOUS LOAD CURRENT (2) CURRENT-LIMIT PROTECTION 1.5 A Constant-Current For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Maximum ambient temperature is a function of device junction temperature and system level considerations, such as load current, power dissipation and board layout. See dissipation rating table and recommended operating conditions for specific information related to these devices. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) (2) Voltage range on IN, OUT, EN or EN, ILIM, FAULT Voltage range from IN to OUT IO Continuous output current VALUE UNIT –0.3 to 7 V –7 to 7 V Internally Limited Continuous FAULT sink current 25 mA ILIM source current 1 mA Human Body Model Classification Level H2 2 kV 750 V ESD Charged Device Model ESD Classification Level C3B Ratings IEC system level (contact/air) (3) 8 / 15 kV TJ Maximum junction temperature –40 to 150 °C Tstg Storage temperature –65 to 150 °C (1) (2) (3) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Voltages are referenced to GND unless otherwise noted. Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold. THERMAL INFORMATION THERMAL METRIC (1) TPS2553-Q1 TPS2553-Q1 DBV (6 PINS) DRV (6 PINS) θJA Junction-to-ambient thermal resistance 182.6 72 θJCtop Junction-to-case (top) thermal resistance 122.2 85.3 θJB Junction-to-board thermal resistance 29.4 41.3 ψJT Junction-to-top characterization parameter 20.8 1.7 ψJB Junction-to-board characterization parameter 28.9 41.7 θJCbot Junction-to-case (bottom) thermal resistance n/a 11.1 (1) UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 3 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com RECOMMENDED OPERATING CONDITIONS VIN Input voltage, IN VEN Enable voltage VIH High-level input voltage on EN or EN VIL Low-level input voltage on EN or EN IOUT Continuous output current, OUT RILIM Current-limit threshold resistor range (nominal 1%) from ILIM to GND IO Continuous FAULT sink current Operating virtual junction temperature (1) (1) MAX 2.5 6.5 UNIT V 0 6.5 V 1.1 V 0.66 –40 °C ≤ TJ ≤ 125 °C 0 1.2 –40 °C ≤ TJ ≤ 105 °C 0 1.5 15 232 kΩ 0 10 mA Input de-coupling capacitance, IN to GND TJ MIN A μF 0.1 IOUT ≤ 1.2 A –40 125 IOUT ≤ 1.5 A -40 105 °C See "Dissipation Rating Table" and "Power Dissipation and Junction Temperature" sections for details on how to calculate maximum junction temperature for specific applications and packages. ELECTRICAL CHARACTERISTICS over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted) TEST CONDITIONS (1) PARAMETER MIN TYP MAX UNIT POWER SWITCH DBV package, TA = 25°C 85 DBV package, –40°C ≤TA ≤125°C rDS(on) Static drain-source on-state resistance DRV package, TA = 25°C 100 DRV package, –40°C ≤TA ≤105°C tf Rise time, output Fall time, output VIN = 6.5 V mΩ 150 VIN = 6.5 V VIN = 2.5 V 115 140 DRV package, –40°C ≤TA ≤125°C tr 95 135 1.1 0.7 CL = 1 μF, RL = 100 Ω, (see Figure 2) VIN = 2.5 V 1.5 1 ms 0.2 0.5 0.2 0.5 0.66 1.1 V –0.5 0.5 μA 3 ms 3 ms ENABLE INPUT EN OR EN Enable pin turn on/off threshold IEN Input current ton Turnon time toff Turnoff time VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V CL = 1 μF, RL = 100 Ω, (see Figure 2) CURRENT-LIMIT RILIM = 15 kΩ RILIM = 20 kΩ IOS Current-limit threshold (Maximum DC output current IOUT delivered to load) and Short-circuit current, OUT connected to GND RILIM = 49.9 kΩ –40°C ≤TA ≤105°C 1610 1700 1800 TA = 25°C 1215 1295 1375 –40°C ≤TA ≤125°C 1200 1295 1375 TA = 25°C 490 520 550 –40°C ≤TA ≤125°C 475 520 565 100 130 150 50 75 100 RILIM = 210 kΩ ILIM shorted to IN tIOS Response time to short circuit VIN = 5 V (see Figure 3) mA μs 2 REVERSE-VOLTAGE PROTECTION Reverse-voltage comparator trip point (VOUT – VIN) Time from reverse-voltage condition to MOSFET turn off (1) 4 VIN = 5 V 95 135 190 mV 3 5 7 ms Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 ELECTRICAL CHARACTERISTICS (continued) over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted) TEST CONDITIONS (1) PARAMETER MIN TYP MAX UNIT SUPPLY CURRENT IIN_off Supply current, low-level output 0.1 1 μA RILIM = 20 kΩ 120 140 μA RILIM = 210 kΩ 100 120 μA TA = 25 °C 0.01 1 μA 2.35 2.45 VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V IIN_on Supply current, high-level output VIN = 6.5 V, No load on OUT IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V UNDERVOLTAGE LOCKOUT UVLO Low-level input voltage, IN Hysteresis, IN VIN rising TA = 25 °C 25 V mV FAULT FLAG VOL Output low voltage, FAULT I/FAULT = 1 mA Off-state leakage V/FAULT = 6.5 V FAULT deglitch 180 mV 1 μA FAULT assertion or de-assertion due to overcurrent condition 5 8 11 ms FAULT assertion or de-assertion due to reverse-voltage condition 2 4 6 ms THERMAL SHUTDOWN Thermal shutdown threshold 155 °C Thermal shutdown threshold in current-limit 135 °C Hysteresis 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 °C 5 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com DEVICE INFORMATION Pin Functions PIN TPS2553-Q1DBV NO. TPS2553-Q1DRV NO. I/O EN – – I Enable input, logic low turns on power switch EN 3 4 I Enable input, logic high turns on power switch GND 2 5 IN 1 6 I Input voltage; connect a 0.1 μF or greater ceramic capacitor from IN to GND as close to the IC as possible. FAULT 4 3 O Active-low open-drain output, asserted during overcurrent, overtemperature, or reverse-voltage conditions. OUT 6 1 O Power-switch output ILIM 5 2 O External resistor used to set current-limit threshold; recommended 15 kΩ ≤ RILIM ≤ 232 kΩ. PowerPAD™ – PAD NAME DESCRIPTION Ground connection; connect externally to PowerPAD Internally connected to GND; used to heat-sink the part to the circuit board traces. Connect PowerPAD to GND pin externally. Add -1 for Latch-Off version FUNCTIONAL BLOCK DIAGRAM - Reverse Voltage Comparator + IN OUT 4-ms Deglitch CS Current Sense Charge Pump Driver EN Current Limit (Note A) FAULT UVLO GND Thermal Sense 8-ms Deglitch ILIM Note A: TPS255x parts enter constant current mode during current limit condition; TPS255x-1 parts latch off 6 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 PARAMETER MEASUREMENT INFORMATION OUT tf tr CL RL 90% 90% VOUT 10% 10% TEST CIRCUIT VEN 50% 50% VEN ton VOUT toff toff toff ton 90% 50% 50% 90% VOUT 10% 10% VOLTAGE WAVEFORMS Figure 2. Test Circuit and Voltage Waveforms IOS IOUT tIOS Figure 3. Response Time to Short Circuit Waveform Decreasing Load Resistance VOUT Decreasing Load Resistance IOUT IOS Figure 4. Output Voltage vs. Current-Limit Threshold Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 7 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS TPS2553-Q1 VIN 10 mF IN VOUT OUT RFAULT 10 kW 150 mF ILIM Fault Signal FAULT Control Signal EN RILIM GND Power Pad Figure 5. Typical Characteristics Reference Schematic 8 Figure 6. Turnon Delay and Rise Time Figure 7. Turnoff Delay and Fall Time Figure 8. Device Enabled into Short-Circuit Figure 9. Full-Load to Short-Circuit Transient Response Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 TYPICAL CHARACTERISTICS (continued) Figure 10. Short-Circuit to Full-Load Recovery Response Figure 11. No-Load to Short-Circuit Transient Response Figure 12. Short-Circuit to No-Load Recovery Response Figure 13. No Load to 1Ω Transient Response Figure 14. 1Ω to No Load Transient Response Figure 15. Reverse-Voltage Protection Response Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 9 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) 2.40 UVLO - Undervoltage Lockout - V 2.39 RILIM = 20 kW 2.38 2.37 UVLO Rising 2.36 2.35 2.34 UVLO Falling 2.33 2.32 2.31 2.30 -50 Figure 16. Reverse-Voltage Protection Recovery 0.36 135 IIN - Supply Current, Output Enabled - mA IIN - Supply Current, Output Disabled - mA 100 150 150 RILIM = 20 kW 0.32 0.28 0.24 VIN = 6.5 V 0.20 0.16 0.12 0.08 VIN = 2.5 V 0.04 RILIM = 20 kW VIN = 6.5 V VIN = 5 V 120 105 90 75 VIN = 2.5 V VIN = 3.3 V 60 45 30 15 0 -50 0 50 TJ - Junction Temperature - °C 100 0 -50 150 Figure 18. IIN – Supply Current, Output Disabled – μA 0 50 TJ - Junction Temperature - °C 100 150 Figure 19. IIN – Supply Current, Output Enabled – μA 150 rDS(on) - Static Drain-Source On-State Resistance - mW 20 VIN = 5 V, 18 RILIM = 20 kW, TA = 25°C 16 Current Limit Response - ms 50 TJ - Junction Temperature - °C Figure 17. UVLO – Undervoltage Lockout – V 0.40 14 12 10 8 6 4 2 0 0 1.5 3 Peak Current - A 4.5 Figure 20. current-limit Response – μs 10 0 6 125 DRV Package 100 DBV Package 75 50 25 0 -50 0 50 TJ - Junction Temperature - °C 100 150 Figure 21. MOSFET rDS(on) Vs. Junction Temperature Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 TYPICAL CHARACTERISTICS (continued) 1400 150 1300 140 130 IDS - Static Drain-Source Current - mA IDS - Static Drain-Source Current - mA 1200 TA = -40°C 1100 1000 TA = 25°C 900 TA = 125°C 800 700 600 500 400 300 120 TA = 25°C TA = -40°C 110 TA = 125°C 100 90 80 70 60 50 40 30 200 VIN = 6.5 V, 20 VIN = 6.5 V, 100 RILIM = 20 kW 10 RILIM = 200 kW 0 0 100 200 300 400 500 600 VIN - VOUT - 100 mV/div 700 800 900 1000 Figure 22. Switch Current Vs. Drain-Source Voltage Across Switch 0 0 100 200 300 400 500 600 VIN - VOUT - 100 mV/div 700 800 900 1000 Figure 23. Switch Current Vs. Drain-Source Voltage Across Switch Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 11 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com DETAILED DESCRIPTION OVERVIEW The TPS2553-Q1 is current-limited. Power-distribution switches using N-channel MOSFETs for applications where short circuits or heavy capacitive loads will be encountered and provide up to 1.5 A of continuous load current. These devices allow the user to program the current-limit threshold between 75 mA and 1.7 A (typ) via an external resistor. Additional device shutdown features include overtemperature protection and reverse-voltage protection. The device incorporates an internal charge pump and gate drive circuitry necessary to drive the Nchannel MOSFET. The charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.5 V and requires little supply current. The driver controls the gate voltage of the power switch. The driver incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage surges and provides built-in soft-start functionality. The TPS2553-Q1 enters constant-current mode when the load exceeds the current-limit threshold. OVERCURRENT CONDITIONS The TPS2553-Q1 responds to overcurrent conditions by limiting the output current to the IOS levels shown in Figure 24. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Two possible overload conditions can occur. The first condition is when a short circuit or partial short circuit is present when the device is powered-up or enabled. The output voltage is held near zero potential with respect to ground and the TPS2553-Q1 ramps the output current to IOS. The TPS2553-Q1 device will limit the current to IOS until the overload condition is removed or the device begins to thermal cycle. The device will remain off until power is cycled or the device enable is toggled. The second condition is when a short circuit, partial short circuit, or transient overload occurs while the device is enabled and powered on. The device responds to the overcurrent condition within time tIOS (see Figure 3). The current-sense amplifier is overdriven during this time and momentarily disables the internal current-limit MOSFET. The current-sense amplifier recovers and limits the output current to IOS. Similar to the previous case, the TPS2553-Q1 will limit the current to IOS until the overload condition is removed or the device begins to thermal cycle. The TPS2553-Q1 thermal cycles if an overload condition is present long enough to activate thermal limiting in any of the above cases. The device turns off when the junction temperature exceeds 135°C (typ) while in current-limit. The device remains off until the junction temperature cools 10°C (typ) and then restarts. The TPS2553-Q1 cycles on/off until the overload is removed (see Figure 10 and Figure 12) . REVERSE-VOLTAGE PROTECTION The reverse-voltage protection feature turns off the N-channel MOSFET whenever the output voltage exceeds the input voltage by 135 mV (typ) for 4-ms (typ).A reverse current of (VOUT – VIN)/rDS(on)) will be present when this occurs. This prevents damage to devices on the input side of the TPS2553-Q1 by preventing significant current from sinking into the input capacitance. The TPS2553-Q1 device allows the N-channel MOSFET to turn on once the output voltage goes below the input voltage for the same 4-ms deglitch time. 12 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 FAULT RESPONSE The FAULT open-drain output is asserted (active low) during an overcurrent, overtemperature or reverse-voltage condition. The TPS2553-Q1 asserts the FAULT signal until the fault condition is removed and the device resumes normal operation. The TPS2553-Q1 is designed to eliminate false FAULT reporting by using an internal delay "deglitch" circuit for overcurrent (7.5-ms typ) and reverse-voltage (4-ms typ) conditions without the need for external circuitry. This ensures that FAULT is not accidentally asserted due to normal operation such as starting into a heavy capacitive load. The deglitch circuitry delays entering and leaving fault conditions. Overtemperature conditions are not deglitched and assert the FAULT signal immediately. UNDERVOLTAGE LOCKOUT (UVLO) The undervoltage lockout (UVLO) circuit disables the power switch until the input voltage reaches the UVLO turnon threshold. Built-in hysteresis prevents unwanted on/off cycling due to input voltage drop from large current surges. ENABLE (EN OR EN) The logic enable controls the power switch, bias for the charge pump, driver, and other circuits to reduce the supply current. The supply current is reduced to less than 1-μA when a logic high is present on EN or when a logic low is present on EN. A logic low input on EN or a logic high input on EN enables the driver, control circuits, and power switch. The enable input is compatible with both TTL and CMOS logic levels. THERMAL SENSE The TPS2553-Q1 has a self-protection feature using two independent thermal sensing circuits that monitor the operating temperature of the power switch. It disables the operation if the temperature exceeds recommended operating conditions. The TPS2553-Q1 device operates in constant-current mode during an overcurrent condition, which increases the voltage drop across the power-switch. The power dissipation in the package is proportional to the voltage drop across the power switch, which increases the junction temperature during an overcurrent condition. The first thermal sensor turns off the power switch when the die temperature exceeds 135°C (min) and the part is in current-limit. Hysteresis is built into the thermal sensor, and the switch turns on after the device has cooled approximately 10 °C. The TPS2553-Q1 also has a second ambient thermal sensor. The ambient thermal sensor turns off the powerswitch when the die temperature exceeds 155°C (min) regardless of whether the power switch is in current-limit and will turn on the power switch after the device has cooled approximately 10 °C. The TPS2553-Q1 continues to cycle off and on until the fault is removed. The open-drain fault reporting output FAULT is asserted (active low) immediately during an overtemperature shutdown condition. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 13 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com APPLICATION INFORMATION INPUT AND OUTPUT CAPACITANCE Input and output capacitance improves the performance of the device; the actual capacitance should be optimized for the particular application. For all applications, a 0.1μF or greater ceramic bypass capacitor between IN and GND is recommended as close to the device as possible for local noise de-coupling. This precaution reduces ringing on the input due to power-supply transients. Additional input capacitance may be needed on the input to reduce voltage overshoot from exceeding the absolute maximum voltage of the device during heavy transient conditions. This is especially important during bench testing when long, inductive cables are used to connect the evaluation board to the bench power-supply. Placing a high-value electrolytic capacitor on the output pin is recommended when large transient currents are expected on the output. PROGRAMMING THE CURRENT-LIMIT THRESHOLD The overcurrent threshold is user programmable via an external resistor. The TPS2553-Q1 uses an internal regulation loop to provide a regulated voltage on the ILIM pin. The current-limit threshold is proportional to the current sourced out of ILIM. The recommended 1% resistor range for RILIM is 15 kΩ ≤ RILIM ≤ 232 kΩ to ensure stability of the internal regulation loop. Many applications require that the minimum current-limit is above a certain current level or that the maximum current-limit is below a certain current level, so it is important to consider the tolerance of the overcurrent threshold when selecting a value for RILIM. The following equations and Figure 24 can be used to calculate the resulting overcurrent threshold for a given external resistor value (RILIM). Figure 24 includes current-limit tolerance due to variations caused by temperature and process. However, the equations do not account for tolerance due to external resistor variation, so it is important to account for this tolerance when selecting RILIM. The traces routing the RILIM resistor to the TPS2553-Q1 should be as short as possible to reduce parasitic effects on the current-limit accuracy. RILIM can be selected to provide a current-limit threshold that occurs 1) above a minimum load current or 2) below a maximum load current. To design above a minimum current-limit threshold, find the intersection of RILIM and the maximum desired load current on the IOS(min) curve and choose a value of RILIM below this value. Programming the current-limit above a minimum threshold is important to ensure start up into full load or heavy capacitive loads. The resulting maximum current-limit threshold is the intersection of the selected value of RILIM and the IOS(max) curve. To design below a maximum current-limit threshold, find the intersection of RILIM and the maximum desired load current on the IOS(max) curve and choose a value of RILIM above this value. Programming the current-limit below a maximum threshold is important to avoid current-limiting upstream power supplies causing the input voltage bus to droop. The resulting minimum current-limit threshold is the intersection of the selected value of RILIM and the IOS(min) curve. Current-Limit Threshold Equations (IOS): IOSmax (mA) = 22980V RILIM0.94kW IOSnom (mA) = 23950V RILIM0.977kW IOSmin (mA) = 25230V RILIM1.016kW (1) where 15 kΩ ≤ RILIM ≤ 232 kΩ. 14 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 While the maximum recommended value of RILIM is 232 kΩ, there is one additional configuration that allows for a lower current-limit threshold. The ILIM pin may be connected directly to IN to provide a 75 mA (typ) current-limit threshold. Additional low-ESR ceramic capacitance may be necessary from IN to GND in this configuration to prevent unwanted noise from coupling into the sensitive ILIM circuitry. 1800 1700 1600 Current Limit Threshold - mA 1500 1400 1300 1200 1100 1000 900 IOS(max) 800 700 600 IOS(nom) 500 400 300 IOS(min) 200 100 0 15 25 35 45 55 65 75 85 95 105 115 125 135 145 155 165 175 185 195 205 215 225 235 RILIM - Current Limit Resistor - kW Figure 24. Current-Limit Threshold vs RILIM Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 15 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com APPLICATION 1: DESIGNING ABOVE A MINIMUM current-limit Some applications require that current-limiting cannot occur below a certain threshold. For this example, assume that 1 A must be delivered to the load so that the minimum desired current-limit threshold is 1000 mA. Use the IOS equations and Figure 24 to select RILIM. IOSmin (mA) = 1000mA IOSmin (mA) = 25230V RILIM1.016 k W 1 æ 25230V ÷ö1.016 RILIM (k W ) = ççç ÷÷ çè I mA ÷ø OSmin RILIM (k W ) = 24k W (2) Select the closest 1% resistor less than the calculated value: RILIM = 23.7 kΩ. This sets the minimum current-limit threshold at 1 A . Use the IOS equations, Figure 24, and the previously calculated value for RILIM to calculate the maximum resulting current-limit threshold. RILIM (kW) = 23.7kW IOSmax (mA) = IOSmax (mA) = 22980V RILIM0.94kW 22980V 23.70.94kW IOSmax (mA) = 1172.4mA (3) The resulting maximum current-limit threshold is 1172.4 mA with a 23.7 kΩ resistor. APPLICATION 2: DESIGNING BELOW A MAXIMUM current-limit Some applications require that current-limiting must occur below a certain threshold. For this example, assume that the desired upper current-limit threshold must be below 500 mA to protect an up-stream power supply. Use the IOS equations and Figure 24 to select RILIM. IOSmax (mA) = 500mA IOSmax (mA) = 22980V RILIM0.94kW 1 æ 22980V ÷ö0.94 ÷ RILIM (kW) = ççç çèIOSmax mA ÷÷ø RILIM (kW) = 58.7kW (4) Select the closest 1% resistor greater than the calculated value: RILIM = 59 kΩ. This sets the maximum currentlimit threshold at 500 mA . Use the IOS equations, Figure 24, and the previously calculated value for RILIM to calculate the minimum resulting current-limit threshold. RILIM (kW) = 59kW IOSmin (mA) = IOSmin (mA) = 25230V RILIM1.016kW 25230V 591.016kW IOSmin (mA) = 400.6mA (5) The resulting minimum current-limit threshold is 400.6 mA with a 59 kΩ resistor. 16 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 ACCOUNTING FOR RESISTOR TOLERANCE The previous sections described the selection of RILIM given certain application requirements and the importance of understanding the current-limit threshold tolerance. The analysis focused only on the TPS2553-Q1 performance and assumed an exact resistor value. However, resistors sold in quantity are not exact and are bounded by an upper and lower tolerance centered around a nominal resistance. The additional RILIM resistance tolerance directly affects the current-limit threshold accuracy at a system level. The following table shows a process that accounts for worst-case resistor tolerance assuming 1% resistor values. Step one follows the selection process outlined in the application examples above. Step two determines the upper and lower resistance bounds of the selected resistor. Step three uses the upper and lower resistor bounds in the IOS equations to calculate the threshold limits. It is important to use tighter tolerance resistors, e.g. 0.5% or 0.1%, when precision current-limiting is desired. Table 1. Common RILIM Resistor Selections Ideal Resistor (kΩ) Closest 1% Resistor (kΩ) 120 226.1 226 200 134.0 300 Desired Nominal current-limit (mA) Resistor Tolerance Actual Limits 1% high (kΩ) IOS MIN (mA) IOS Nom (mA) IOS MAX (mA) 223.7 228.3 50.0 75.0 100.0 101.3 120.0 133 131.7 134.3 142.1 173.7 201.5 88.5 88.7 87.8 233.9 89.6 262.1 299.4 342.3 400 65.9 66.5 500 52.5 52.3 65.8 67.2 351.2 396.7 448.7 51.8 52.8 448.3 501.6 600 43.5 562.4 43.2 42.8 43.6 544.3 604.6 673.1 700 800 37.2 37.4 37.0 37.8 630.2 696.0 770.8 32.4 32.4 32.1 32.7 729.1 800.8 882.1 900 28.7 28.7 28.4 29.0 824.7 901.5 988.7 1000 25.8 26.1 25.8 26.4 908.3 989.1 1081.0 1100 23.4 23.2 23.0 23.4 1023.7 1109.7 1207.5 1200 21.4 21.5 21.3 21.7 1106.0 1195.4 1297.1 1300 19.7 19.6 19.4 19.8 1215.1 1308.5 1414.9 1400 18.3 18.2 18.0 18.4 1310.1 1406.7 1517.0 1500 17.0 16.9 16.7 17.1 1412.5 1512.4 1626.4 1600 16.0 15.8 15.6 16.0 1512.5 1615.2 1732.7 1700 15.0 15.0 14.9 15.2 1594.5 1699.3 1819.4 75 1% low (kΩ) SHORT ILIM to IN CONSTANT-CURRENT VS. LATCH-OFF OPERATION AND IMPACT ON OUTPUT VOLTAGE During normal operation the constant-current device (TPS2553-Q1) has a load current that is less than the current-limit threshold and the device is not limiting current. During normal operation the N-channel MOSFET is fully enhanced, and VOUT = VIN - (IOUT x rDS(on)). The voltage drop across the MOSFET is relatively small compared to VIN, and VOUT ≉ VIN. During the initial onset of an overcurrent event, the constant-current device (TPS2553-Q1) limits current to the programmed current-limit threshold set by RILIM by operating the N-channel MOSFET in the linear mode. During current-limit operation, the N-channel MOSFET is no longer fully-enhanced and the resistance of the device increases. This allows the device to effectively regulate the current to the current-limit threshold. The effect of increasing the resistance of the MOSFET is that the voltage drop across the device is no longer negligible (VIN ≠ VOUT), and VOUT decreases. The amount that VOUT decreases is proportional to the magnitude of the overload condition. The expected VOUT can be calculated by IOS × RLOAD, where IOS is the current-limit threshold and RLOAD is the magnitude of the overload condition. For example, if IOS is programmed to 1 A and a 1 Ω overload condition is applied, the resulting VOUT is 1 V. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 17 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com The constant-current device (TPS2553-Q1) operates during the initial onset of an overcurrent event, if the overcurrent event lasts longer than the internal delay "deglitch" circuit (7.5-ms typ). The constant-current device (TPS2553-Q1) asserts the FAULT flag after the deglitch period and continues to regulate the current to the current-limit threshold indefinitely. In practical circuits, the power dissipation in the package will increase the die temperature above the overtemperature shutdown threshold (135°C min), and the device will turn off until the die temperature decreases by the hysteresis of the thermal shutdown circuit (10°C typ). The device will turn on and continue to thermal cycle until the overload condition is removed. The constant-current devices resume normal operation once the overload condition is removed. POWER DISSIPATION AND JUNCTION TEMPERATURE The low on-resistance of the N-channel MOSFET allows small surface-mount packages to pass large currents. It is good design practice to estimate power dissipation and junction temperature. The below analysis gives an approximation for calculating junction temperature based on the power dissipation in the package. However, it is important to note that thermal analysis is strongly dependent on additional system level factors. Such factors include air flow, board layout, copper thickness and surface area, and proximity to other devices dissipating power. Good thermal design practice must include all system level factors in addition to individual component analysis. Begin by determining the rDS(on) of the N-channel MOSFET relative to the input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(on) from the typical characteristics graph. Using this value, the power dissipation can be calculated by: PD = rDS(on) × IOUT 2 Where: PD = Total power dissipation (W) rDS(on) = Power switch on-resistance (Ω) IOUT = Maximum current-limit threshold (A) This step calculates the total power dissipation of the N-channel MOSFET. Finally, calculate the junction temperature: TJ = PD × θJA + TA Where: TA = Ambient temperature (°C) θJA = Thermal resistance (°C/W) PD = Total power dissipation (W) Compare the calculated junction temperature with the initial estimate. If they are not within a few degrees, repeat the calculation using the "refined" rDS(on) from the previous calculation as the new estimate. Two or three iterations are generally sufficient to achieve the desired result. The final junction temperature is highly dependent on thermal resistance θJA, and thermal resistance is highly dependent on the individual package and board layout. The Thermal Information Table provides example thermal resistance for specific packages and board layouts. 18 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 UNIVERSAL SERIAL BUS (USB) POWER-DISTRIBUTION REQUIREMENTS One application for this device is for current-limiting in universal serial bus (USB) applications. The original USB interface was a 12-Mb/s or 1.5-Mb/s, multiplexed serial bus designed for low-to-medium bandwidth PC peripherals (e.g., keyboards, printers, scanners, and mice). As the demand for more bandwidth increased, the USB 2.0 standard was introduced increasing the maximum data rate to 480-Mb/s. The four-wire USB interface is conceived for dynamic attach-detach (hot plug-unplug) of peripherals. Two lines are provided for differential data, and two lines are provided for 5-V power distribution. USB data is a 3.3-V level signal, but power is distributed at 5 V to allow for voltage drops in cases where power is distributed through more than one hub across long cables. Each function must provide its own regulated 3.3 V from the 5-V input or its own internal power supply. The USB specification classifies two different classes of devices depending on its maximum current draw. A device classified as low-power can draw up to 100 mA as defined by the standard. A device classified as high-power can draw up to 500 mA. It is important that the minimum current-limit threshold of the current-limiting power-switch exceed the maximum current-limit draw of the intended application. The latest USB standard should always be referenced when considering the currentlimit threshold The USB specification defines two types of devices as hubs and functions. A USB hub is a device that contains multiple ports for different USB devices to connect and can be self-powered (SPH) or bus-powered (BPH). A function is a USB device that is able to transmit or receive data or control information over the bus. A USB function can be embedded in a USB hub. A USB function can be one of three types included in the list below. • Low-power, bus-powered function • High-power, bus-powered function • Self-powered function SPHs and BPHs distribute data and power to downstream functions. The TPS2553-Q1 has higher current capability than required for a single USB port allowing it to power multiple downstream ports. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 19 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com SELF-POWERED AND BUS-POWERED HUBS A SPH has a local power supply that powers embedded functions and downstream ports. This power supply must provide between 4.75 V to 5.25 V to downstream facing devices under full-load and no-load conditions. SPHs are required to have current-limit protection and must report overcurrent conditions to the USB controller. Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs. A BPH obtains all power from an upstream port and often contains an embedded function. It must power up with less than 100 mA. The BPH usually has one embedded function, and power is always available to the controller of the hub. If the embedded function and hub require more than 100 mA on power up, the power to the embedded function may need to be kept off until enumeration is completed. This is accomplished by removing power or by shutting off the clock to the embedded function. Power switching the embedded function is not necessary if the aggregate power draw for the function and controller is less than 100 mA. The total current drawn by the bus-powered device is the sum of the current to the controller, the embedded function, and the downstream ports, and it is limited to 500 mA from an upstream port. LOW-POWER BUS-POWERED AND HIGH-POWER BUS-POWERED FUNCTIONS Both low-power and high-power bus-powered functions obtain all power from upstream ports. Low-power functions always draw less than 100 mA; high-power functions must draw less than 100 mA at power up and can draw up to 500 mA after enumeration. If the load of the function is more than the parallel combination of 44 Ω and 10 μF at power up, the device must implement inrush current-limiting. USB POWER-DISTRIBUTION REQUIREMENTS USB can be implemented in several ways regardless of the type of USB device being developed. Several powerdistribution features must be implemented. • SPHs must: – current-limit downstream ports – Report overcurrent conditions • BPHs must: – Enable/disable power to downstream ports – Power up at <100 mA – Limit inrush current (<44 Ω and 10 μF) • Functions must: – Limit inrush currents – Power up at <100 mA The feature set of the TPS2553-Q1 meets each of these requirements. The integrated current-limiting and overcurrent reporting is required by self-powered hubs. The logic-level enable and controlled rise times meet the need of both input and output ports on bus-powered hubs and the input ports for bus-powered functions. 20 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 TPS2553-Q1 www.ti.com SLVSBD0 – NOVEMBER 2012 AUTO-RETRY FUNCTIONALITY Some applications require that an overcurrent condition disables the part momentarily during a fault condition and re-enables after a pre-set time. This auto-retry functionality can be implemented with an external resistor and capacitor. During a fault condition, FAULT pulls low disabling the part. The part is disabled when EN is pulled low, and FAULT goes high impedance allowing CRETRY to begin charging. The part re-enables when the voltage on EN reaches the turnon threshold, and the auto-retry time is determined by the resistor/capacitor time constant. The part will continue to cycle in this manner until the fault condition is removed. TPS2553-Q1 0.1 mF Input Output IN OUT RLOAD RFAULT CLOAD 100 kW ILIM RILIM FAULT 20 kW GND EN CRETRY Power Pad 0.1 mF Figure 25. Auto-Retry Functionality Some applications require auto-retry functionality and the ability to enable/disable with an external logic signal. The figure below shows how an external logic signal can drive EN through RFAULT and maintain auto-retry functionality. The resistor/capacitor time constant determines the auto-retry time-out period. TPS2553-Q1 Input 0.1 mF Output IN OUT RLOAD CLOAD External Logic Signal & Driver RFAULT 100 kW ILIM RILIM FAULT 20 kW GND EN CRETRY 0.1 mF Power Pad Figure 26. Auto-Retry Functionality With External EN Signal Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 21 TPS2553-Q1 SLVSBD0 – NOVEMBER 2012 www.ti.com TWO-LEVEL CURRENT-LIMIT CIRCUIT Some applications require different current-limit thresholds depending on external system conditions. Figure 27 shows an implementation for an externally controlled, two-level current-limit circuit. The current-limit threshold is set by the total resistance from ILIM to GND (see the Programming the Current-Limit Threshold section). A logiclevel input enables/disables MOSFET Q1 and changes the current-limit threshold by modifying the total resistance from ILIM to GND. Additional MOSFET/resistor combinations can be used in parallel to Q1/R2 to increase the number of additional current-limit levels. NOTE ILIM should never be driven directly with an external signal. Input 0.1 mF Output IN OUT RFAULT 100 kW ILIM Fault Signal Control Signal CLOAD R1 210 kW FAULT RLOAD R2 22.1 kW GND EN Power Pad Q1 2N7002 Current Limit Control Signal Figure 27. Two-Level Current-Limit Circuit 22 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS2553-Q1 PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 PACKAGING INFORMATION Orderable Device Status (1) TPS2553QDBVRQ1 ACTIVE Package Type Package Pins Package Qty Drawing SOT-23 DBV 6 3000 Eco Plan Lead/Ball Finish (2) Green (RoHS & no Sb/Br) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) CU NIPDAU Level-2-260C-1 YEAR (4) PYEQ (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. 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OTHER QUALIFIED VERSIONS OF TPS2553-Q1 : • Catalog: TPS2553 NOTE: Qualified Version Definitions: Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 • Catalog - TI's standard catalog product Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPS2553QDBVRQ1 Package Package Pins Type Drawing SPQ SOT-23 3000 DBV 6 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 178.0 9.0 Pack Materials-Page 1 3.23 B0 (mm) K0 (mm) P1 (mm) 3.17 1.37 4.0 W Pin1 (mm) Quadrant 8.0 Q3 PACKAGE MATERIALS INFORMATION www.ti.com 5-Dec-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS2553QDBVRQ1 SOT-23 DBV 6 3000 180.0 180.0 18.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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