VS-ST330CL Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • High profile hockey PUK • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS TO-200AC (B-PUK) • DC motor controls • Controlled DC power supplies PRODUCT SUMMARY Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 650 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V VTM 1.90 V IGT 100 mA TJ -40 °C to 125 °C • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 650 A 55 °C 1230 A 25 °C 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM 400 to 1600 tq Typical TJ A kA2s V 100 μs -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST330C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 50 Revision: 04-Aug-14 Document Number: 94408 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330CL Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing IT(AV) IT(RMS) ITSM I2t I2t TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled VALUES UNITS 650 (314) A 55 (75) °C DC at 25 °C heatsink temperature double side cooled 1230 t = 10 ms No voltage reapplied 9000 7570 t = 8.3 ms t = 10 ms 100 % VRRM t = 8.3 ms reapplied t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100 % VRRM t = 8.3 ms reapplied 9420 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 4050 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.57 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.57 Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.90 Maximum on-state voltage VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 262 t = 0.1 to 10 ms, no voltage reapplied Low level value of threshold voltage Maximum holding current A 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 04-Aug-14 Document Number: 94408 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330CL Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM VALUES TEST CONDITIONS Typ. Max. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 °C TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD - 100 Maximum required gate trigger/ 50 current/voltage are the lowest value which will trigger all units 2.5 12 V anode to cathode applied 1.8 TJ = -40 °C VGT V 200 TJ = 125 °C DC gate voltage required to trigger A 5.0 TJ = -40 °C DC gate current required to trigger 200 Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied mA 3.0 1.1 TJ = TJ maximum W 20 TJ = TJ maximum, tp 5 ms UNITS V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 RthJ-hs RthC-hs DC operation single side cooled 0.11 DC operation double side cooled 0.06 DC operation single side cooled 0.011 DC operation double side cooled 0.005 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 9800 (1000) N (kg) 250 g TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 04-Aug-14 Document Number: 94408 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330CL Series 130 Vishay Semiconductors ST330C..L Series (Single Side Cooled) RthJ-hs (DC) = 0.11 K/ W 120 110 100 90 Conduction Angle 80 70 30° 60° 60 90° 120° 50 180° 40 30 0 50 100 150 200 250 300 350 400 450 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST330C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.05 K/ W 120 110 100 90 Conduction Period 80 70 30° 60 60° 50 90° 120° 40 30 DC 20 0 100 90 Conduction Period 80 70 60 50 30° 40 60° 90° 120° 30 180° 20 0 200 400 DC 600 800 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST330C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.11 K/ W 110 180° 120° 90° 60° 30° 1400 1200 RMS Limit 1000 800 600 Conduc tion Angle 400 ST330C..L Series TJ = 125°C 200 0 0 Fig. 5 - On-State Power Loss Characteristics 100 90 Conduction Angle 80 70 60 30° 50 60° 40 90° 120° 180° 30 20 0 200 400 600 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 800 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST330C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.05 K/ W 110 100 200 300 400 500 600 700 800 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 120 600 800 1000 1200 1400 1600 Average On-state Current (A) 130 400 Fig. 4 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 120 200 Average On-state Current (A) Average On-state Current (A) 130 180° 2200 DC 180° 120° 90° 60° 30° 2000 1800 1600 1400 1200 RMSLimit 1000 800 Conduction Period 600 ST330C..L Series TJ = 125°C 400 200 0 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 04-Aug-14 Document Number: 94408 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330CL Series 8000 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 4000 ST330C..L Series 3500 1 10 9000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 7500 No Voltage Reapplied Rated VRRM Reapplied 7000 8500 6500 6000 5500 5000 4500 4000 ST330C..L Series 3500 0.01 100 0.1 1 Pulse Train Duration (s) Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 Tj = 125 °C 1000 Tj = 25 °C ST330C..L Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 1 Steady State Value RthJ-hs = 0.11 K/ W (Single Side Cooled) 0.1 RthJ-hs = 0.05 K/ W (Double Side Cooled) (DC Operation) 0.01 ST330C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 04-Aug-14 Document Number: 94408 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330CL Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms (a) (b) 1 Tj=-40 °C Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) Device: ST330C..L Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 33 0 C 16 L 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case TO-200AC (B-PUK) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95076 Revision: 04-Aug-14 Document Number: 94408 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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