RoHS MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR D T ,. L * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 ) 1. Symbol Rating Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage Veb 4 V Collector Current Ic 500 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 R T Characteristic Collector-Base Breakdown Voltage O Collector-Emitter Voltage# Breakdown C E L Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain E Symbol Min BVcbo 80 BVceo BVebo 0.95 2.9 1 .9 Collector-Base Voltage ELECTRICAL CHARACTERISTICS at Ta=25 IC N Typ Max Unit C O 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm Test Conditions V Ic=100uA Ie=0 80 V Ic= 1mA 4 V Ie= 100uA Ic=0 Ib=0 Icbo 100 nA Vcb= 80V Ie=0 Ices 100 nA Vce= 60V Ib= 0 Hfe1 80 Hfe2 80 250 Vce=1V Ic=10mA Vce=1V Ic=100mA Collector-Emitter Saturation Voltage Vce(sat) 0.25 V Ic=100mA Ib=10mA Base-Emitter On Voltage Vbe(on) 1.2 V Ic=100mA Vce=1V MHz Vce=2V Ic=10mA J E Current Gain-Bandwidth Product W Unit 0.95 Characteristic 2.4 1.3 0.4 ABSOLUTE MAXIMUM RATINGS at Ta=25 fT 100 f=100MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: MMBTA06LT1=1G WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]