RoHS 2SC2412 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity 0.95 0.95 2.9 1.9 2.4 1.3 Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Electrical Characteristics Parameter IC N ABSOLUTE MAXIMUM RATINGS O T stg Symbol C 0.4 Collector-Emiller Voltage:V CE =45V Storage Temperature D T ,. L O 3 o (Ta=25 C) Rating Unit 50 V 45 V 5 V 100 mA 225 mW 150 O -55~150 O o MIN. TYP. MAX. Unit Condition BV CBO 50 V I C =100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO 45 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 5 V I E =100 A I C =0 Collector -Base Cutoff Current I CBO 50 nA V CB =50V, V C =0 Emitter-Base Cutoff Current J E I EBO 50 nA V CB =5V, I C =0 DC Current Gain H FE 60 C C (Ta=25 C) Collector-Base Breakdown Voltage E Unit:mm 300 1000 V CE =5V, I C =1mA Collector-Emitter Saturation Voltage V CE(sat) 0.3 V I C =100mA, I B =5mA Base-Emitter Saturation Voltage V BE(sat) 1.00 I C =100mA, I B =5mA Base-Emitter on Voltage V BE(on) 6.7 V V Output Capacitance C ob 3.5 PF V CB =10V, I E =10mA,f=100MHz Current Gain-Bandwidth Product fT Noise Figure NF W 0.58 0.63 2.2 V C e =5V, I C =2mA MHz V CE =5V I C =10mA 150 270 dB 10 V CE =5V I C =0.2mA f=1MHz Rs=2Kohm o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SC2412=F14 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]