2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2719 ○ Solenoid Drive Applications ○ Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 60±10 V Emitter-base voltage VEBO 8 V DC IC 0.8 Pulse ICP 3 IB 0.5 Collector current Base current DC Collector power dissipation t = 10 s Junction temperature Storage temperature range PC (Note) 0.8 1.25 A 1. Base 2. Emitter 3. Collector A W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 2-3S1C Weight: 0.01 g (typ.) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≒5 kΩ Emitter ≒300 Ω 1 2007-06-07 2SD2719 Electrical Characteristics (Ta = 25°C) Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Turn-on time Symbol Test Condition Typ. Max Unit ICBO VCB = 45 V, IE = 0 ⎯ ⎯ 10 μA ICEO VCE = 45 V, IE = 0 ⎯ ⎯ 10 μA IEBO VEB = 8 V, IC = 0 0.80 ⎯ 4.0 mA V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V hFE VCE = 2 V, IC = 1 A 2000 ⎯ ⎯ VCE (sat) (1) IC = 0.5 A, IB = 1 mA ⎯ ⎯ 1.2 V VCE (sat) (2) IC = 1 A, IB = 1 mA ⎯ ⎯ 1.5 V VBE (sat) IC = 1 A, IB = 1 mA ⎯ ⎯ 2.0 V Output ⎯ 0.4 ⎯ ⎯ 4.0 ⎯ ⎯ 0.6 ⎯ ton Input 20 μs 5V Switching time Min RL = 30 Ω Characteristic Storage time tstg Fall time tf Duty cycle ≦1% VCC = 30 V μs Marking Part No. (or abbreviation code) W V Lot code (year) Dot: even year No dot: odd year Lot code (month) 2 2007-06-07 2SD2719 IC – VCE 3.2 0.5 1 (A) 0.3 2.4 0.22 1.6 0.20 0.8 Common emitter VCE = 2 V 2.4 Collector current IC Collector current IC (A) 3 IC – VBE 3.2 Common emitter Ta = 25°C 1.6 25 − 55 Ta = 100℃ 0.8 IB = 0.18 mA 0 0 2 4 6 Collector-emitter voltage 0 0 8 0.8 VCE (V) VCE (sat) – IC Common emitter VCE = 2 V 3000 Ta = 100°C −55 1000 25 500 3.2 VBE (V) 10 Collector-emitter saturation voltage VCE (sat) (V) 300 Common emitter IC/IB = 500 5 3 1 −55 25 0.5 Ta = 100°C ) DC current gain hFE 5000 2.4 Base-emitter voltage hFE – IC 10000 1.6 100 0.03 0.05 0.3 0.5 0.1 1 3 Collector current IC 0.3 0.1 10 5 1 Collector current IC (A) VCE – IB VBE (sat) – IC 10 Common emitter Ta = 25°C 2.0 2.5 1.6 2.0 IC = 3.0 A 1.5 1.2 1.0 0.5 0.1 0.4 0 0.1 0.3 1 3 10 30 100 Common emitter IC/IB = 500 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage VCE (V) 2.4 0.8 10 (A) 5 3 −55 25 1 0.5 0.3 0.1 300 Ta =100°C 1 Collector current IC Base current IB (mA) 3 10 (A) 2007-06-07 2SD2719 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 10 1 Pulse width 100 1000 tw (s) Safe Operating Area 10 IC max (pulse) * 1 ms* Collector current IC (A) 10 ms* 1 IC max (continuous) 100 ms* 10 s* DC operation Ta=25℃ 0.1 *: Single nonrepetitive pulse 0.01 1 Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation will be different when the devices aren’t mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu 2 area, 645 mm ). These characteristic curves must be derated linearly with increase in temperature. VCEO MAX. 10 100 Collector-emitter voltage VCE (V) 4 2007-06-07 2SD2719 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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