ACE1557B N-Channel Enhancement Mode Field Effect Transistor Description The ACE1557B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Features 30V/5A =-30V RDS(ON)=29mΩ @ VGS=10V RDS(ON)=41mΩ @ VGS=4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current * AC TA=25℃ TA=70℃ Pulsed Drain Current * B TA=25℃ Power Dissipation TA=70℃ ID IDM PD 5 4.1 20 2 1.6 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type SOT-223 Ordering information ACE1557B XX + H Halogen - free Pb - free XM : SOT-223 VER 1.2 1 ACE1557B N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 30 34 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1 1.4 Gate Leakage Current Zero Gate Voltage Drain Current IGSS VDS=0V,VGS=±20V 100 nA IDSS VDS=24V, VGS=0V 1 uA Drain-Source On-Resistance RDS(ON) Forward Transconductance V 2 VGS=10V, ID=4A 29 32 VGS=4.5V, ID=3A 41 51 gfs VDS=5V,ID=5A 15 Diode Forward Voltage VSD ISD=1A, VGS=0V 0.77 Maximum Body-Diode Continuous Current IS mΩ S 1.0 V 4.3 A Switching Total Gate Charge Qg 7.6 9.9 Gate-Source Charge Qgs 1.3 1.7 Gate-Drain Charge Qgd 1.7 2.2 Turn-On Delay Time td(on) 10.1 20.3 Turn-On Rise Time Tr 3.2 6.3 Turn-Off Delay Time td(off) 22.2 44.4 Turn-Off Fall Time Tf 3 6 VDS=15V, VGS=10V, ID=5A VGS=10V, RG=6Ω, VDS=15V, RL=15Ω, ID=1A nC nS Dynamic Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss Gate resistance Rg 391 VGS=0V, VDS=15V, f=1MHz Crss 86.2 pF 59.4 VGS=0V, VDS=0V, f=1MHz 1.4 2 VER 1.2 Ω 2 ACE1557B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1557B N-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-223 Units: mm VER 1.2 4 ACE1557B N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5