ACE1522B P-Channel Enhancement Mode Field Effect Transistor Description Line current interrupter in telephone sets Relay High speed and line transformer drivers. Features VDS(V)=-50V, ID=-0.13A RDS(ON)＜10Ω@VGS=-5V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) ID -0.13 Drain Current (Pulse) ID -0.52 Power Dissipation(1) PD 0.35 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A W O C Packaging Type SOT-23-3 Ordering information ACE1522B XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 1 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit On/Off characteristics Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS VGS=0V, ID=-250uA -50 V VDS=-50V, VGS=0V VDS=-50V, VGS=0V, TJ=125℃ VGS=±20V, VDS=0V -15 -60 uA ±10 nA 10 Ω -2 V On characteristics b Static Drain-Source On-Resistance RDS(ON) VGS=-5V, ID=-0.1A Gate Threshold Voltage VGS(th) VDS=VGS, ID=-1mA -0.8 -1.75 Forward Transconductance gFS VDS=-25V, ID=-0.1A 0.05 0.6 Switching characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf S b VDS=-25V, ID=-0.1A VGS=-5V VDD=-30V, ID=-0.27A, VGS=-10V RGEN=6Ω 0.9 1.3 0.2 nC 0.3 2.5 5 6.3 13 10 20 4.8 9.6 ns Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance RG VDS=-10V, VGS=0V f=200KHz VGS=-15mV, f=1.0MHz 33 38 pF 36 Ω 9 Drain-source diode characteristics and maximum ratings b Drain-Source Diode Forward VSD VGS=0V, IS=-0.26A (2) -0.8 Voltage -1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% VER 1.2 2 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3 Unit: mm VER 1.2 5 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6