ACE1500B P-Channel Enhancement Mode Field Effect Transistor Description The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Features VDS(V)=-20V ID=-1.6A (VGS=-4.5V) RDS(ON)＜155mΩ (VGS=-4.5V) RDS(ON)＜168mΩ (VGS=-2.5V) RDS(ON)＜220mΩ (VGS=-1.8V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25 OC ID -1.6 Drain Current (Pulse) IDM -5 Power Dissipation TA=25 OC PD 350 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A mW O C Packaging Type SOT-323 VER 1.2 1 ACE1500B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1500B XX + H Halogen - free Pb - free CM : SOT-323 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±12V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) -20 V VGS=-4.5V, ID=-1A 145 155 VGS=-2.5V, ID=-0.5A 150 168 VGS=-1.8V, ID=-0.3A 180 220 -0.7 -1 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.4 Forward Transconductance gFS VDS=-5V, ID=-2A 5 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=-1.6A, VGS=0V -0.93 IS mΩ V S -1.1 V -1.6 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=-6V, ID=-2.8A VGS=-4.5V 4.9 0.62 nC 1.07 10.1 VDS=-6V,RGEN=6Ω, VGS=-4.5V RL=6Ω 4.76 ns 84.1 25.2 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-6V, VGS=0V f=1MHz 472 71 pF 51 Notes: 1. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. 2. Guaranteed by design, not subject to production testing. VER 1.2 2 ACE1500B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1500B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE1500B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-323 Unit: mm VER 1.2 5 ACE1500B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6