ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features VDS(V)=20V ID=6A (VGS=4.5V) RDS(ON)<30mΩ (VGS=4.5V) RDS(ON)<40mΩ (VGS=2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V VGSS ±12 V Gate-Source Voltage O Drain Current (Continuous) * AC TA=25 C O TA=70 C Drain Current (Pulse) * B ID IDM O Power Dissipation TA=25 C O TA=70 C PD 6 5 24 2 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A A W O C Packaging Type SOP-8 VER 1.2 1 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Ordering information ACE9926B XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±12V, VDS=0V 100 nA Drain-Source On-State Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Forward Transconductance gFS VDS=5V, ID=6A 12 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD VGS=0V, ISD=1.7A 0.8 VGS=4.5V, ID=6A 21 30 VGS=2.5V, ID=5.2A 30 40 0.78 1 0.65 IS mΩ V S 1.0 V 1.7 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=10V, VGS=4.5V, ID=6A VGS=4.5V, VDS=10V, RL=10Ω, RGEN=6Ω 6.24 8.11 1.64 2.13 1.34 1.74 10.4 20.8 4.4 8.8 27.36 54.72 4.16 8.32 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=8V, VGS=0V f=1MHz 522.3 98.48 pF 74.69 Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 5 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Packing Information SOP-8 Unit: mm VER 1.2 6 ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7