AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 60V 140A/78A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) RDS(ON) (at VGS=6V) < 4.0mΩ (< 3.8mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT266L/AOB266L Parameter Drain-Source Voltage VDS 60 Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 18 Steady-State Steady-State A 14 90 A 405 mJ TJ, TSTG Symbol t ≤ 10s A EAS PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 55 IAS PD TA=25°C V 450 IDSM TA=70°C Units V 78 110 IDM TA=25°C Continuous Drain Current ±20 140 ID TC=100°C C AOTF266L RθJA RθJC 268 45.5 134 22.5 2.1 W 1.3 -55 to 175 AOT266L/AOB266L 15 60 0.56 W °C AOTF266L 15 60 3.3 Units °C/W °C/W °C/W * Surface mount package TO263 1/7 www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 60 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 450 VGS=10V, ID=20A TO220/TO220F TJ=125°C VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A TO263 VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr nA 3.2 V 2.9 3.5 4.9 5.9 3.2 4 mΩ 2.6 3.2 mΩ 3 3.8 mΩ A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 0.4 mΩ S 1 V 140 A 5650 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs ±100 0.65 VGS=0V, VDS=30V, f=1MHz µA 2.7 80 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 VGS(th) Static Drain-Source On-Resistance Max VDS=60V, VGS=0V IGSS RDS(ON) Typ pF 720 pF 20 pF 0.9 1.4 Ω 65 90 nC 20 nC Gate Drain Charge 7 nC Turn-On DelayTime 21 ns 20 ns 36 ns VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 6 ns IF=20A, dI/dt=500A/µs 27 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 145 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 6V 80 80 10V 60 ID(A) ID (A) 60 4V 125°C 40 40 20 20 25°C Vgs=3.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2.2 6 RDS(ON) (mΩ Ω) 2.5 VGS=6V 4 2 VGS=10V 2 VGS=10V ID=20A 1.8 17 5 2 VGS=6V 10 1.6 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 40 125°C 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 3/7 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 VDS=30V ID=20A 7000 Ciss 8 Capacitance (pF) VGS (Volts) 6000 6 4 5000 4000 Coss 3000 2000 2 1000 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 10µs 10µs 100µs RDS(ON) 60 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 500 Power (W) 100.0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 600 1000.0 ID (Amps) Crss 0 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT266L and AOB266L (Note F) 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT266L and AOB266L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.56°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F) 4/7 www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 1000.0 100µs 1ms 10ms 10.0 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 500 Power (W) ID (Amps) 100.0 10µs RDS(ON) limited 400 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF266L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF266L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.3°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 0.00001 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F) 5/7 www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating (Note F) 175 1000 150 TA=25°C 100 Power (W) Current rating ID(A) 120 90 60 17 5 2 10 10 30 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 175 0 0.1 10 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) 6/7 www.freescale.net.cn AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 7/7 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn