AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description The AOT298L & AOB298L & AOTF298L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 100V 58A/33A RDS(ON) (at VGS=10V) < 14.5mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT298L/AOB298L VDS Drain-Source Voltage 100 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current TA=25°C V 26 A 130 9 IDSM TA=70°C Units V 33 41 IDM A 7 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C EAS, EAR 20 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/7 ±20 58 ID TC=100°C C AOTF298L TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC 100 33 50 16 2.1 W 1.33 -55 to 175 AOT298L/AOB298L 15 60 1.5 W °C AOTF298L 15 60 4.5 Units °C/W °C/W °C/W www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.7 ID(ON) On state drain current VGS=10V, VDS=5V 130 TJ=55°C VGS=10V, ID=20A 5 ±100 nA 4.1 V 12 14.5 19 24 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω mΩ S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 Ω 19 27 nC G DYNAMIC PARAMETERS Ciss Input Capacitance µA 3.3 RDS(ON) TJ=125°C Units V VDS=100V, VGS=0V IDSS Coss Max 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 39 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 60 60 ID(A) 80 ID (A) 80 6V 40 40 125°C 20 20 25°C Vgs=5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.2 18 2 Normalized On-Resistance 20 RDS(ON) (mΩ Ω) 16 VGS=10V 14 12 10 3 4 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 8 VGS=10V ID=20A 1.8 17 5 2 10 1.6 1.4 1.2 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=20A 1.0E+01 40 32 1.0E+00 125°C 24 IS (A) RDS(ON) (mΩ Ω) 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 16 1.0E-04 25°C 1.0E-05 8 5 3/7 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=50V ID=20A 8 1600 Capacitance (pF) VGS (Volts) Ciss 6 4 2 800 Coss 400 0 Crss 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 100 TJ(Max)=175°C TC=25°C 10µs10µs 100.0 RDS(ON) limited 600 100µs DC Power (W) 10.0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 800 1000.0 ID (Amps) 1200 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 400 200 0.0 0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT298L and AOB298L (Note F) 0.0001 0.001 0.01 0.1 1 10 0 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT298L and AOB298L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F) 4/7 www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 800 600 RDS(ON) limited 10.0 100µs Power (W) ID (Amps) TJ(Max)=175°C TC=25°C 10µs 100.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 Figure 12: Maximum Forward Biased Safe Operating Area for AOTF298L (Note F) 100 5 2 10 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC Zθ JC Normalized Transient Thermal Resistance 10 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case for 17 AOTF298L (Note F) RθJC=4.5°C/W 1 0 18 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 40 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F) 40 Power Dissipation (W) 50 Current rating ID(A) 40 30 20 30 20 10 10 0 0 0 5/7 25 50 75 100 125 150 TCASE (° °C) Figure 15: Current De-rating for AOTF298 F) 175 (Note 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating for AOTF298L F) 175 (Note www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) Current rating ID(A) 80 60 40 20 90 60 30 0 0 0 25 50 0 75 100 125 150 175 TCASE (°C) Figure 17: Current De-rating for AOT298L and AOB298L (Note F) 100 25 50 75 100 125 150 175 TCASE (°C) Figure 18: Power De-rating for AOT298L and AOB298L (Note F) IAR (A) Peak Avalanche Current 10000 TA=25°C 1000 TA=100°C TA=125°C Power (W) TA=25°C 17 5 2 10 100 10 TA=150°C 1 10 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 20: Single Pulse Power Rating Junction-toAmbient (Note H) 1 10 100 Time in avalanche, tA (µ µs) Figure 19: Single Pulse Avalanche capability (Note C) 0.00001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance (Note H) 6/7 www.freescale.net.cn AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 7/7 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn