DINTEK DTM9926

DT.
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Dual N-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)
0.022 at VGS = 4.5 V
6.5
0.030 at VGS = 2.5 V
5.5
• Halogen-free Option Available
• TrenchFET® Power MOSFETs
RoHS*
COMPLIANT
D1
SO-8
S1
G1
S2
G2
8
D1
2
7
D1
3
6
D2
4
5
D2
1
Pb-free
Available
D2
G1
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
5.2
5.5
3.5
30
1.5
A
1.0
1.5
1.0
0.96
0.64
TJ, Tstg
Operating Junction and Storage Temperature Range
V
6.5
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typ.
Max.
72
83
100
120
55
70
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Typ.a
Max.
Unit
1.6
V
VDS = 0 V, VGS = ± 4.5 V
± 200
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 70 °C
25
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = 250 µA
0.6
IGSS
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Voltageb
30
A
VGS = 4.5 V, ID = 6.5 A
0.0165
0.022
VGS = 2.5 V, ID = 5.5 A
0.023
0.030
gfs
VDS = 10 V, ID = 6.5 A
30
VSD
IS = 1.5 A, VGS = 0 V
0.71
1.2
12
18
VDS = 10 V, VGS = 4.5 V, ID = 6.5 A
2.2
RDS(on)
Forward Transconductanceb
Diode Forward
VDS ≤ 5 V, VGS = 4.5 V
µA
Ω
S
V
a
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
3.6
Turn-On Delay Time
td(on)
245
365
330
495
860
1300
510
765
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
nC
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10000
1000
8
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
10
6
4
100
10
TJ = 150 °C
1
2
TJ = 25 °C
0.1
0
0.01
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
2
18
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 5 thru 3 V
2.5 V
25
I D - Drain Current (A)
I D - Drain Current (A)
25
20
15
10
2V
5
20
15
10
TC = 125 °C
5
25 °C
- 55 °C
0
0
1
2
3
4
0
0.0
5
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
5
VGS - Gate-to-Source Voltage (V)
0.05
0.04
0.03
VGS = 2.5 V
VGS = 4.5 V
0.02
VDS = 10 V
ID = 6.5 A
4
3
2
1
0
0.01
5
0
10
15
20
25
0
30
3
6
On-Resistance vs. Drain Current
15
40
VGS = 4.5 V
ID = 6.5 A
I S - Source Current (A)
10
1.2
1.0
0.8
0.6
- 50
12
Gate Charge
1.6
1.4
9
Qg - Total Gate Charge (nC)
ID - Drain Current (A)
R DS(on) - On-Resistance
(Normalized)
1.5
VDS - Drain-to-Source Voltage (V)
0.06
R DS(on) - On-Resistance (Ω)
0.5
TJ = 150 °C
TJ = 25 °C
1
0.1
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
0.4
0.04
0.2
0.03
V GS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
ID = 250 µA
ID = 6.5 A
0.02
0.01
0.0
- 0.2
- 0.4
0.00
0
1
2
3
4
5
- 0.6
- 50
6
VGS - Gate-to-Source Voltage (V)
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
200
Limited by R DS(on)*
10
1 ms
1
10 ms
I D - Drain Current (A)
Power (W)
160
120
80
100 ms
0.1
40
1s
10 s
TC = 25 °C
Single Pulse
DC
0.01
0
0.001
0.01
0.1
1
10
0.1
Time (s)
Single Pulse Power
10
100
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 115 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
100
600
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
5
Package Information
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
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0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Legal Disclaimer Notice
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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