DT. www.daysemi.jp Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET® Power MOSFETs RoHS* COMPLIANT D1 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 Pb-free Available D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.2 5.5 3.5 30 1.5 A 1.0 1.5 1.0 0.96 0.64 TJ, Tstg Operating Junction and Storage Temperature Range V 6.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typ. Max. 72 83 100 120 55 70 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. 1 DT. www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Typ.a Max. Unit 1.6 V VDS = 0 V, VGS = ± 4.5 V ± 200 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 25 Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.6 IGSS Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Voltageb 30 A VGS = 4.5 V, ID = 6.5 A 0.0165 0.022 VGS = 2.5 V, ID = 5.5 A 0.023 0.030 gfs VDS = 10 V, ID = 6.5 A 30 VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 12 18 VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2.2 RDS(on) Forward Transconductanceb Diode Forward VDS ≤ 5 V, VGS = 4.5 V µA Ω S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 245 365 330 495 860 1300 510 765 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 1000 8 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10 6 4 100 10 TJ = 150 °C 1 2 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage 2 18 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 3 V 2.5 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 2V 5 20 15 10 TC = 125 °C 5 25 °C - 55 °C 0 0 1 2 3 4 0 0.0 5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 5 VGS - Gate-to-Source Voltage (V) 0.05 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 VDS = 10 V ID = 6.5 A 4 3 2 1 0 0.01 5 0 10 15 20 25 0 30 3 6 On-Resistance vs. Drain Current 15 40 VGS = 4.5 V ID = 6.5 A I S - Source Current (A) 10 1.2 1.0 0.8 0.6 - 50 12 Gate Charge 1.6 1.4 9 Qg - Total Gate Charge (nC) ID - Drain Current (A) R DS(on) - On-Resistance (Normalized) 1.5 VDS - Drain-to-Source Voltage (V) 0.06 R DS(on) - On-Resistance (Ω) 0.5 TJ = 150 °C TJ = 25 °C 1 0.1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) R DS(on) - On-Resistance (Ω) ID = 250 µA ID = 6.5 A 0.02 0.01 0.0 - 0.2 - 0.4 0.00 0 1 2 3 4 5 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 200 Limited by R DS(on)* 10 1 ms 1 10 ms I D - Drain Current (A) Power (W) 160 120 80 100 ms 0.1 40 1s 10 s TC = 25 °C Single Pulse DC 0.01 0 0.001 0.01 0.1 1 10 0.1 Time (s) Single Pulse Power 10 100 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 115 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 DT. www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 5 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 www.daysemi.jp 1 Application Note RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.daysemi.jp 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1