DTM8201 www.din-tek.jp Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 6.5 0.020 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET® Power MOSFETs • ESD Protected: 3000 V Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 6 S2 5 G2 Top View G2 S2 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.2 5.5 3.5 30 1.5 A 1.0 1.5 1.0 0.96 0.64 TJ, Tstg Operating Junction and Storage Temperature Range V 6.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typ. Max. 72 83 100 120 55 70 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. 1 DTM8201 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Typ.a Max. Unit 1.6 V VDS = 0 V, VGS = ± 4.5 V ± 200 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 25 Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.6 IGSS Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Voltageb 30 A VGS = 4.5 V, ID = 6.5 A 0.0155 0.017 VGS = 2.5 V, ID = 5.5 A 0.017 0.020 gfs VDS = 10 V, ID = 6.5 A 30 VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 12 18 VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2.2 RDS(on) Forward Transconductanceb Diode Forward VDS ≤ 5 V, VGS = 4.5 V µA Ω S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 245 365 330 495 860 1300 510 765 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 1000 8 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10 6 4 100 10 TJ = 150 °C 1 2 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage 2 18 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 DTM8201 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 3 V 2.5 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 2V 5 20 15 10 TC = 125 °C 5 25 °C - 55 °C 0 0 1 2 3 0 0.0 5 4 1.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 5 VGS - Gate-to-Source Voltage (V) 0.05 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 VDS = 10 V ID = 6.5 A 4 3 2 1 0 0.01 5 0 10 15 20 25 0 30 3 6 On-Resistance vs. Drain Current 40 VGS = 4.5 V ID = 6.5 A I S - Source Current (A) 10 1.2 1.0 0.8 0.6 - 50 15 Gate Charge 1.6 1.4 12 9 Qg - Total Gate Charge (nC) ID - Drain Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.5 VDS - Drain-to-Source Voltage (V) 0.06 R DS(on) - On-Resistance (Ω) 0.5 TJ = 150 °C TJ = 25 °C 1 0.1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 DTM8201 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) R DS(on) - On-Resistance (Ω) ID = 250 µA ID = 6.5 A 0.02 0.01 0.0 - 0.2 - 0.4 0.00 0 1 2 3 4 5 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 200 Limited by R DS(on)* 10 1 ms 1 10 ms I D - Drain Current (A) Power (W) 160 120 80 100 ms 0.1 40 1s 10 s TC = 25 °C Single Pulse DC 0.01 0 0.001 0.1 0.01 1 10 0.1 Time (s) Single Pulse Power 10 100 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 115 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 DTM8201 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 5 Package Information www.din-tek.jp TSSOP: 8ĆLEAD JEDEC Part Number: MO-153 R 0.10 Corners) A1 A A2 D e 0.25 (Gage Plane) E1 MILLIMETERS E C L B R 0.10 (4 Corners) oK1 L1 Dim A A1 A2 B C D E E1 e L L1 Y oK1 Min Nom Max – – 1.20 0.05 0.10 0.15 0.80 1.00 1.05 0.19 0.28 0.30 – 0.127 – 2.90 3.00 3.10 6.20 6.40 6.60 4.30 4.40 4.50 – 0.65 – 0.45 0.60 0.75 0.90 1.00 1.10 – – 0.10 0_ 3_ 6_ ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5844 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR TSSOP-8 0.092 (2.337) 0.026 (4.623) (1.016) 0.182 0.040 (6.655) 0.262 (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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