AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D1 D2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G2 VGS TA=25°C TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH TA=25°C B Power Dissipation TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD Junction and Storage Temperature Range Maximum 80 3.5 ID Pulsed Drain Current C S2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4830 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.5 VGS=10V, VDS=5V 18 TJ=55°C gFS Forward Transconductance VDS=5V, ID=3.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 100 nA 4.2 5 V 62 75 113.0 135 A ISM 0.77 Pulsed Body-diode Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 11 13 Qg(4.5V) Total Gate Charge 4 5.5 7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=40V, ID=3.5A 4 5 6 nC 0.7 1.2 1.7 nC VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω IF=3.5A, dI/dt=300A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs mΩ 15 C DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=3.5A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 80 VDS=80V, VGS=0V IDSS ID(ON) Typ 7.2 ns 2.2 ns 17 ns 2 ns 14 20 26 35 50 65 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with Rev 1 : Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 7V 16 16 6V 12 ID(A) ID (A) 12 8 8 125°C 5.5V 4 4 25°C 5V 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance RDS(ON) (mΩ ) 6 7 2.2 90 80 70 VGS=10V 60 2 VGS=10V ID=3.5A 1.8 1.6 17 5 2 10 1.4 1.2 1 0.8 50 0 4 8 12 16 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 150 1.0E+02 ID=3.5A 1.0E+01 130 40 1.0E+00 125°C 125°C 110 IS (A) RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.0E-01 1.0E-02 90 25°C 1.0E-03 70 25°C 1.0E-04 1.0E-05 50 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=40V ID=3.5A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 200 2 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 100.0 100 ID(A), Peak Avalanche Current 0 12 TA=25°C TA=100°C 10 TA=150°C 1 0.000001 0.00001 TA=125°C 10ms 100ms 0.0001 ID (Amps) 10.0 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100m DC 10s 0.0 0.1 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C Power (W) 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4830 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com