AOSMD AO4494L

AO4494L
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4494L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 6.5mΩ
(VGS = 10V)
RDS(ON) < 9.5mΩ
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
D
SOIC-8
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
Power Dissipation B
C
TC=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±20
V
A
14
IDM
130
IAR
32
A
EAR
51
mJ
3.1
PD
TC=70°C
Units
V
18
ID
TC=70°C
Maximum
30
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
Typ
28
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4494L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
VDS=30V, VGS=0V
1
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
130
±100
nA
2.5
V
5.4
6.5
8.4
10.1
VGS=4.5V, ID=16A
7.5
9.5
VDS=5V, ID=18A
70
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
µA
2
VGS=10V, ID=18A
Coss
Units
V
TJ=125°C
IGSS
IS
Max
30
VGS(th)
RDS(ON)
Typ
A
0.75
mΩ
mΩ
S
1
V
3
A
1270
1590
1900
pF
VGS=0V, VDS=15V, f=1MHz
170
240
310
pF
87
145
200
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.5
2.3
Ω
24
30
36
nC
VGS=10V, VDS=15V, ID=18A
12
15
18
nC
4.2
5.2
6.2
nC
4.7
7.8
11
nC
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
6.7
ns
3.5
ns
22.5
ns
4
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=18A, dI/dt=500A/µs
22
28
34
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
19
24
30
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0: Sept 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
100
10V
5V
120
6V
VDS=5V
4.5V
80
100
60
4V
ID(A)
ID (A)
7V
80
60
40
3.5V
40
125°C
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
1
12
3
4
5
6
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
8
6
VGS=10V
4
1.6
VGS=10V
ID=18A
1.4
17
5
VGS=4.5V 2
ID=16A 10
1.2
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
1.0E+02
ID=18A
1.0E+01
20
40
15
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
10
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2200
10
Ciss
1800
Capacitance (pF)
8
VGS (Volts)
2000
VDS=15V
ID=18A
6
4
2
1600
1400
1200
1000
800
600
Coss
400
200
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
90.00
1000.0
TA=25°C
80.00
10µs
70.00
60.00
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
TA=150°C
50.00
TA=125°C
10µs
10.0
100µs
1ms
1.0
10ms
100ms
10s
DC
40.00
TJ(Max)=150°C
TA=25°C
0.1
30.00
20.00
0.000001
0.0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
30
RDS(ON)
limited
TA=100°C
ID (Amps)
ID(A), Peak Avalanche Current
Crss
0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
40
RθJA=40°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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