AO4728L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4728L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. ID = 20A (VGS = 10V) RDS(ON) < 4.3mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) VDS (V) = 30V - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! D SOIC-8 D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G G S S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH Power Dissipation B C TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead AD Alpha & Omega Semiconductor, Ltd. V 17 A 146 IAR 40 A EAR 80 mJ 3.1 TJ, TSTG t ≤ 10s Steady-State Steady-State W 2 -55 to 150 Symbol A ±20 IDM PD TC=70°C Units V 20 ID TC=70°C Maximum 30 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4728L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 146 RDS(ON) Static Drain-Source On-Resistance 20 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=18A gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Units V TJ=125°C VSD Max 0.1 IDSS IS Typ 1.8 mA 0.1 µA 2.2 V A 3.6 4.3 5.5 6.6 4.8 6 87 0.4 mΩ mΩ S 0.7 V 6 A 2975 3719 4463 pF VGS=0V, VDS=15V, f=1MHz 485 693 900 pF 204 340 476 pF VGS=0V, VDS=0V, f=1MHz 0.28 0.56 0.84 Ω 48 60 72 nC 20 25 30 nC 12 15 18 nC 10 14 nC VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 21 26.5 32 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.2 ns 10.7 ns 40 ns 12.5 ns ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev0: Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4728L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 120 10V VDS=5V 10V 140 100 5V 120 4V 4.5V ID(A) ID (A) 80 3.5V 100 80 60 60 40 40 125°C VGS=3V 20 25°C 20 0 0 0 1 2 3 4 0 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 7 Normalized On-Resistance 1.8 6 RDS(ON) (mΩ) 1 VGS=4.5V 5 4 3 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V10 1.2 1 ID=18A 0.8 1 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 11 ID=20A 1.0E+01 7 IS (A) RDS(ON) (mΩ) 9 125°C 125°C 1.0E+00 25°C 5 1.0E-01 25°C 3 1.0E-02 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4728L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 200 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 180 TA=25°C 100.0 160 140 120 ID (Amps) IAR (A) Peak Avalanche Current Ciss 4000 TA=100°C 100 80 60 TA=150°C 10µs 10.0 100µs 1ms 1.0 10ms 100ms 10s TJ(Max)=150°C TC=25°C 0.1 TA=125°C 40 RDS(ON) limited DC 20 0.0 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4728L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4728L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 0.6 1.0E-02 VDS=30V 10A 0.5 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 0.4 5A 0.3 1.0E-05 0.2 1.0E-06 0.1 100 150 200 Temperature (°C) Figure 13: Diode Reverse Leakage Current vs. Junction Temperature 38 di/dt=800A/µs 36 125ºC 0 14 16 12 14 25ºC Qrr 30 125ºC Irm 6 26 5 10 15 20 25 125ºC trr 1.5 2 2 0 0 20 25 30 2.5 2 125ºC trr (ns) 4 1.5 trr 12 25ºC 125º 1 S 8 25ºC 2 4 0 1000 0 5 15 20 Irm (A) Qrr (nC) 125ºC 10 10 16 6 Qrr 5 Is=20A 25ºC 15 0.5 24 8 20 25ºC IS (A) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 125ºC 25 1 0 0 10 Is=20A 125ºC S 4 IS (A) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 2 8 30 35 2.5 25ºC 6 4 25ºC 28 0 trr (ns) 32 3 di/dt=800A/µs 10 Irm (A) 8 100 150 200 Temperature (°C) Figure 14: Diode Forward voltage vs. Junction Temperature 12 10 34 50 S 50 S 0 Qrr (nC) IS=1A 25ºC 0.5 Irm 0 0 200 400 600 800 di/dt (A/µs) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AO4728L Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com