AOSMD AO7411

AO7411
20V P-Channel MOSFET
General Description
Product Summary
The AO7411 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with
gate voltages as low as 1.8V. This device is suitable for
use as a load switch or in PWM applications.
ID (at VGS=-4.5V)
-20V
-1.8A
RDS(ON) (at VGS=-4.5V)
< 120mΩ
RDS(ON) (at VGS =-2.5V)
< 150mΩ
RDS(ON) (at VGS=-1.8V)
< 200mΩ
Top View
VDS
SC-70-6
(SOT-323)
Bottom View
D
Top View
D
D
G
6
D
2
5
D
3
4
S
1
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 4: July 2010
Steady-State
Steady-State
A
-10
W
0.4
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
0.63
PD
TA=70°C
±8
-1.5
IDM
TA=25°C
Units
V
-1.8
ID
TA=70°C
Maximum
-20
RθJA
RθJL
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Typ
160
180
130
°C
Max
200
220
160
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO7411
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.4
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-10
TJ=55°C
±100
TJ=125°C
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
tD(on)
mΩ
mΩ
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qgd
160
10
IS=-1A,VGS=0V
Gate Source Charge
90
mΩ
Maximum Body-Diode Continuous Current
Qgs
120
200
Diode Forward Voltage
Gate resistance
65
150
VSD
Rg
V
A
80
IS
Reverse Transfer Capacitance
-1
nA
100
VDS=-5V, ID=-1.8A
Crss
-0.65
µA
VGS=-2.5V, ID=-1.6A
Forward Transconductance
Output Capacitance
Units
VGS=-1.8V, ID=-1.0A
gFS
Coss
-5
VDS=0V, VGS= ±8V
VGS=-4.5V, ID=-1.8A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-1.8A
S
-1
V
-1
A
745
pF
80
pF
70
pF
15
23.0
8.5
11
Ω
nC
1.2
nC
Gate Drain Charge
2.1
nC
Turn-On DelayTime
7.2
ns
36
ns
53
ns
56
ns
VGS=-4.5V, VDS=-10V,
RL=5.55Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-1.8A, dI/dt=100A/µs
37
Qrr
Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs
27
49
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: July 2010
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Page 2 of 5
AO7411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
12
-3V
-4.5V
VDS=-5V
10
15
8
-ID(A)
-ID (A)
-2.5V
10
-2V
6
4
25°C
125°C
5
2
VGS=-1.5V
0
0
0
1
2
3
4
0.5
5
140
1.5
2
2.5
120
VGS=-2.5V
110
100
90
VGS=-4.5V
80
70
Normalized On-Resistance
1.6
VGS=-1.8V
130
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
VGS=-2.5V
ID=-1.6A
1.4
VGS=-4.5V
ID=-1.8A
1.2
VGS=-1.8V
ID=-1.0A
1
17
5
2
10
0.8
0
2
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
200
1.0E+02
ID=-1.8A
1.0E+01
170
40
140
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°
110
125°
1.0E-01
1.0E-02
25°
1.0E-03
80
1.0E-04
25°
1.0E-05
50
1
4
5
6
7
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: July 2010
2
3
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO7411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-1.8A
1200
1000
Capacitance (pF)
-VGS (Volts)
4
3
2
800
Ciss
600
400
Coss
1
200
0
Crss
0
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
100
100.0
-ID (Amps)
10.0
10µs
100µs
RDS(ON)
limited
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
TA=25°C
10
1
10s
DC
0.0
0.1
0.01
0.1
1
-VDS (Volts)
10
100
0.0001 0.001
0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=220°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: July 2010
www.aosmd.com
Page 4 of 5
AO7411
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 4: July 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5