DINTEK DTM4606

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N- and P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
30
- 30
•
•
•
•
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.0355 at VGS = 10 V
6.8
0.0425 at VGS = 4.5 V
6.2
0.045 at VGS = - 10 V
- 5.8
0.062 at VGS = - 4.5 V
- 5.0
5.3
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
11.8
• Backlight Inverter for LCD Display
• Full Bridge Converter
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
- 30
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
6.8
- 5.8
5.4
- 4.7
TA = 25 °C
ID
IDM
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
b, c
- 4.7b, c
4.4b, c
- 3.7b, c
5.6
TA = 70 °C
Pulsed Drain Current
IS
- 20
- 2.5
1.6b, c
- 1.6b, c
ISM
20
- 20
Single Pulse Avalanche Current
IAS
7
- 10
EAS
2.45
5
3.0
3.1
L = 0 1 mH
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
1.9
2
2.0b, c
1.25b, c
1.25b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
mJ
2.0b, c
PD
TA = 70 °C
A
20
2.5
Pulsed Source-Drain Current
Single Pulse Avalanche Energy
V
± 20
TC = 70 °C
Unit
W
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
P-Channel
Symbol
Typ.
Max.
Typ.
Max.
t ≤ 10 s
RthJA
54
64
49
62.5
Steady State
RthJF
33
42
30
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
30
VGS = 0 V, ID = - 250 µA
P-Ch
- 30
V
ID = 250 µA
N-Ch
44
ID = - 250 µA
P-Ch
- 42
ID = 250 µA
N-Ch
- 5.5
mV/°C
IID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
1.4
3.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.2
- 2.5
VDS = 0 V, VGS = ± 20 V
4.6
N-Ch
100
P-Ch
- 100
VDS = 30 V, VGS = 0 V
N-Ch
1
VDS = - 30 V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS = 5 V, VGS = 10 V
N-Ch
10
VDS = - 5 V, VGS = - 10 V
P-Ch
- 10
VGS = 10 V, ID = 5 A
N-Ch
V
nA
µA
A
0.0295
0.0355
VGS = - 10 V, ID = - 5 A
P-Ch
0.037
0.045
VGS = 4.5 V, ID = 4 A
N-Ch
0.0355
0.0425
VGS = - 4.5 V, ID = - 4 A
P-Ch
0.050
0.062
VDS = 15 V, ID = 5 A
N-Ch
22
VDS = - 15 V, ID = - 5 A
P-Ch
14
N-Ch
640
P-Ch
970
Ω
S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
2
Ciss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Rg
73
P-Ch
120
N-Ch
41
pF
P-Ch
95
VDS = 20 V, VGS = 10 V, ID = 5 A
N-Ch
11.7
20
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
P-Ch
25
38
N-Ch
5.3
9
P-Ch
11.8
18
N-Ch
1.9
N-Channel
VDS = 20 V, VGS = 4.5 V ID = 5 A
P-Channel
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
P-Ch
3.0
N-Ch
1.7
Qgs
Qgd
N-Ch
P-Ch
f = 1 MHz
nC
5.2
N-Ch
0.5
2.2
4.5
P-Ch
1.0
5.5
11
Ω
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Dynamic
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tr
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
td(off)
tf
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
tr
tf
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
N-Ch
7
14
P-Ch
7
14
N-Ch
10
20
P-Ch
12
24
N-Ch
15
30
P-Ch
30
60
N-Ch
9
18
P-Ch
9
18
N-Ch
16
30
80
P-Ch
44
N-Ch
17
30
P-Ch
33
50
N-Ch
16
30
P-Ch
28
60
N-Ch
10
20
P-Ch
13
25
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
N-Ch
2.5
P-Ch
- 2.5
N-Ch
20
P-Ch
VSD
- 20
IS = 1.6 A
N-Ch
0.78
1.2
IS = - 1.6 A
P-Ch
- 0.76
- 1.2
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
N-Ch
19
30
P-Ch
26
50
N-Ch
14
25
P-Ch
18.5
35
N-Ch
13
P-Ch
12.5
N-Ch
6
P-Ch
13.5
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
3
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
VGS = 10 thru 5 V
4V
4
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
6
3
TC = 25 °C
2
1
TC = 125 °C
3V
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
3
2
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
800
0.052
640
5
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.044
VGS = 4.5 V
0.036
VGS = 10 V
480
320
Coss
0.028
160
0.020
0
0
6
12
18
24
30
Crss
0
6
ID - Drain Current (A)
12
30
Capacitance
1.8
10
ID = 5 A
ID = 5 A
VDS = 10 V
VDS = 30 V
4
2
(Normalized)
VDS = 20 V
6
0
0.0
VGS = 10 V
1.6
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.4
VGS = 4.5 V
1.2
1.0
0.8
2.5
5.0
7.5
Qg - Total Gate Charge (nC)
Gate Charge
4
18
10.0
12.5
0.6
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
100
ID = 5 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.16
0.12
0.08
TA = 125 °C
0.04
TA = 25 °C
0.001
0.0
0
0.4
0.2
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
80
0.4
0.2
ID = 250 µA
64
Power (W)
ID = 5 mA
- 0.2
48
32
- 0.4
16
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
10
I D - Drain Current (A)
V GS(th) Variance (V)
8
6
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.0
4
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
5
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
5
4
2
0
0
50
25
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0.0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
6
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
7
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
VGS = 10 thru 5 V
4
VGS = 4 V
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
6
3
2
TC = 25 °C
1
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
3
2
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
1600
0.08
1280
0.06
1
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
VGS = 4.5 V
VGS = 10 V
0.04
5
Ciss
960
640
Coss
0.02
320
Crss
0.00
0
6
12
18
24
0
0.0
30
2.4
4.8
1.8
ID = 5 A
ID = 5 A
VDS = 20 V
1.6
VDS = 10 V
6
VDS = 30 V
4
2
VGS = 10 V
1.4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12.0
Capacitance
10
8
9.6
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
0
0.0
7.2
VGS = 4.5 V
1.2
1.0
0.8
5.1
10.2
15.3
20.4
25.5
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
100
ID = 5 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.01
0.16
0.12
0.08
TJ = 125 °C
0.04
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.8
50
0.6
40
ID = 250 µA
Power (W)
0.4
ID = 1 mA
0.2
30
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
10
I D - Drain Current (A)
VGS(th) Variance (V)
1
Limited by RDS(on)*
1 ms
1
10 ms
100 ms
0.1
10 s
1s
DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
9
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7.0
I D - Drain Current (A)
5.6
4.2
2.8
1.4
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power (W)
Power (W)
Current Derating*
2.4
1.6
0.9
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
10
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
11
Package Information
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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1
Application Note
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Legal Disclaimer Notice
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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