DT. www.daysemi.jp N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 • • • • ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.045 at VGS = - 10 V - 5.8 0.062 at VGS = - 4.5 V - 5.0 5.3 Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS 11.8 • Backlight Inverter for LCD Display • Full Bridge Converter D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C 6.8 - 5.8 5.4 - 4.7 TA = 25 °C ID IDM Source-Drain Current Diode Current TC = 25 °C TA = 25 °C b, c - 4.7b, c 4.4b, c - 3.7b, c 5.6 TA = 70 °C Pulsed Drain Current IS - 20 - 2.5 1.6b, c - 1.6b, c ISM 20 - 20 Single Pulse Avalanche Current IAS 7 - 10 EAS 2.45 5 3.0 3.1 L = 0 1 mH TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C 1.9 2 2.0b, c 1.25b, c 1.25b, c TJ, Tstg Operating Junction and Storage Temperature Range mJ 2.0b, c PD TA = 70 °C A 20 2.5 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 20 TC = 70 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ. Max. Typ. Max. t ≤ 10 s RthJA 54 64 49 62.5 Steady State RthJF 33 42 30 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W. 1 DT. www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 V ID = 250 µA N-Ch 44 ID = - 250 µA P-Ch - 42 ID = 250 µA N-Ch - 5.5 mV/°C IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.4 3.0 VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5 VDS = 0 V, VGS = ± 20 V 4.6 N-Ch 100 P-Ch - 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 10 VDS = - 5 V, VGS = - 10 V P-Ch - 10 VGS = 10 V, ID = 5 A N-Ch V nA µA A 0.0295 0.0355 VGS = - 10 V, ID = - 5 A P-Ch 0.037 0.045 VGS = 4.5 V, ID = 4 A N-Ch 0.0355 0.0425 VGS = - 4.5 V, ID = - 4 A P-Ch 0.050 0.062 VDS = 15 V, ID = 5 A N-Ch 22 VDS = - 15 V, ID = - 5 A P-Ch 14 N-Ch 640 P-Ch 970 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 2 Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz Coss Crss Qg P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz Rg 73 P-Ch 120 N-Ch 41 pF P-Ch 95 VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 11.7 20 VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 25 38 N-Ch 5.3 9 P-Ch 11.8 18 N-Ch 1.9 N-Channel VDS = 20 V, VGS = 4.5 V ID = 5 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A P-Ch 3.0 N-Ch 1.7 Qgs Qgd N-Ch P-Ch f = 1 MHz nC 5.2 N-Ch 0.5 2.2 4.5 P-Ch 1.0 5.5 11 Ω DT. www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamic Symbol Test Conditions Min. Typ.a Max. Unit a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω td(off) tf td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tr tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 7 14 P-Ch 7 14 N-Ch 10 20 P-Ch 12 24 N-Ch 15 30 P-Ch 30 60 N-Ch 9 18 P-Ch 9 18 N-Ch 16 30 80 P-Ch 44 N-Ch 17 30 P-Ch 33 50 N-Ch 16 30 P-Ch 28 60 N-Ch 10 20 P-Ch 13 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM N-Ch 2.5 P-Ch - 2.5 N-Ch 20 P-Ch VSD - 20 IS = 1.6 A N-Ch 0.78 1.2 IS = - 1.6 A P-Ch - 0.76 - 1.2 trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 19 30 P-Ch 26 50 N-Ch 14 25 P-Ch 18.5 35 N-Ch 13 P-Ch 12.5 N-Ch 6 P-Ch 13.5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 DT. www.daysemi.jp N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 5 V 4V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 3 TC = 25 °C 2 1 TC = 125 °C 3V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 3 2 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 800 0.052 640 5 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.044 VGS = 4.5 V 0.036 VGS = 10 V 480 320 Coss 0.028 160 0.020 0 0 6 12 18 24 30 Crss 0 6 ID - Drain Current (A) 12 30 Capacitance 1.8 10 ID = 5 A ID = 5 A VDS = 10 V VDS = 30 V 4 2 (Normalized) VDS = 20 V 6 0 0.0 VGS = 10 V 1.6 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.4 VGS = 4.5 V 1.2 1.0 0.8 2.5 5.0 7.5 Qg - Total Gate Charge (nC) Gate Charge 4 18 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 DT. www.daysemi.jp N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 ID = 5 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.16 0.12 0.08 TA = 125 °C 0.04 TA = 25 °C 0.001 0.0 0 0.4 0.2 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 80 0.4 0.2 ID = 250 µA 64 Power (W) ID = 5 mA - 0.2 48 32 - 0.4 16 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 10 I D - Drain Current (A) V GS(th) Variance (V) 8 6 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.0 4 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 5 DT. www.daysemi.jp N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 I D - Drain Current (A) 6 5 4 2 0 0 50 25 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 DT. www.daysemi.jp N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 7 DT. www.daysemi.jp P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 5 V 4 VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 3 2 TC = 25 °C 1 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 3 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 1600 0.08 1280 0.06 1 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 VGS = 4.5 V VGS = 10 V 0.04 5 Ciss 960 640 Coss 0.02 320 Crss 0.00 0 6 12 18 24 0 0.0 30 2.4 4.8 1.8 ID = 5 A ID = 5 A VDS = 20 V 1.6 VDS = 10 V 6 VDS = 30 V 4 2 VGS = 10 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12.0 Capacitance 10 8 9.6 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 0 0.0 7.2 VGS = 4.5 V 1.2 1.0 0.8 5.1 10.2 15.3 20.4 25.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 DT. www.daysemi.jp P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 ID = 5 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.16 0.12 0.08 TJ = 125 °C 0.04 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 50 0.6 40 ID = 250 µA Power (W) 0.4 ID = 1 mA 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 10 I D - Drain Current (A) VGS(th) Variance (V) 1 Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 10 s 1s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 9 DT. www.daysemi.jp P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7.0 I D - Drain Current (A) 5.6 4.2 2.8 1.4 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power (W) Power (W) Current Derating* 2.4 1.6 0.9 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 10 DT. www.daysemi.jp P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 11 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 www.daysemi.jp 1 Application Note RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.daysemi.jp 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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