DTM4606BDY www.din-tek.jp N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 ID (A)a RDS(on) () 0.018 at VGS = 10 V 7.0 0.024 at VGS = 4.5 V 5.2 0.036 at VGS = - 10 V - 6.9 0.040 at VGS = - 4.5 V - 5.4 Qg (Typ.) 2.75 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 S2 • DC/DC Converter • Load Switch SO-8 G2 G1 Top View S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 7.0 ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS - 6.9 4.9 - 4.4 5.9b, c - 5.4b, c 3.9b, c - 3.7b, c - 15 - 2.3 1.5b, c - 1.5b, c 24 - 12 ISM Single Pulse Avalanche Current IAS 7 8 EAS 2.5 3.2 2.78 2.78 L = 0.1 mH TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C PD TA = 70 °C mJ 1.78 1.78 1.78b, c 1.78b, c 1.14b, c 1.14b, c TJ, Tstg Operating Junction and Storage Temperature Range A 24 2.3 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 20 TC = 25 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ. Max. Typ. Max. t 10 s RthJA 57 70 57 70 Steady State RthJF 37 45 37 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). 1 DTM4606BDY www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 ID = 250 µA N-Ch V 33 ID = - 250 µA P-Ch - 33 ID = 250 µA N-Ch - 5.8 mV/°C IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.0 3.0 VDS = VGS, ID = - 250 µA P-Ch - 1.0 - 3.0 VDS = 0 V, VGS = ± 20 V 4.5 N-Ch 100 P-Ch - 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch VDS =5 V, VGS = 10 V N-Ch 20 VDS = -5 V, VGS = - 10 V P-Ch - 12 V nA µA -5 A VGS = 10 V, ID = 3.5 A N-Ch 0.011 0.018 VGS = - 10 V, ID = - 3.5 A P-Ch 0.023 0.036 VGS = 4.5 V, ID = 2.8 A N-Ch 0.012 0.024 VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.03 VDS = 15 V, ID = 2.5 A N-Ch 7 VDS = - 15 V, ID = - 3.5 A P-Ch 7 N-Ch 305 P-Ch 340 N-Ch 65 P-Ch 67 N-Ch 29 P-Ch 51 0.04 S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 2 Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 2.5 A N-Ch 6 9 VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A P-Ch 7.8 12 N-Ch 2.75 4.5 N-Channel VDS = 15 V, VGS = 4.5 V ID = 2.5 A P-Ch 4.1 6.2 N-Ch 1.3 P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A P-Ch 1.3 N-Ch 0.9 Qgs Qgd Rg pF P-Ch f = 1 MHz nC 1.8 N-Ch 0.6 3.1 6.2 P-Ch 2.0 10 20 DTM4606BDY www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamic Test Conditions Symbol Min. Typ.a Max. Unit a Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time td(off) tf Fall Time Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time P-Channel VDD = - 15 V, RL = 15 ID - 1 A, VGEN = - 10 V, Rg = 1 N-Channel VDD = 15 V, RL = 15 ID 1 A, VGEN = 4.5 V, Rg = 1 tf P-Channel VDD = - 15 V, RL = 15 ID - 1 A, VGEN = - 4.5 V, Rg = 1 IS TC = 25 °C td(off) Fall Time N-Channel VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 7 11 P-Ch 5.5 10 N-Ch 12 18 P-Ch 13 25 N-Ch 14 25 P-Ch 17 30 N-Ch 6 10 P-Ch 7.7 15 N-Ch 16 30 60 P-Ch 40 N-Ch 16 30 P-Ch 40 60 N-Ch 9 18 P-Ch 20 40 N-Ch 9 18 P-Ch 17 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ISM N-Ch 4.3 P-Ch - 4.3 N-Ch 24 P-Ch VSD A - 12 IS = 1.25 A N-Ch 0.8 1.2 IS = - 0.75 A P-Ch - 0.8 - 1.2 N-Ch 14 21 P-Ch 17 30 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 6 10 P-Ch 11 20 Reverse Recovery Fall Time ta P-Channel IF = - 2.5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 9 P-Ch 12 Reverse Recovery Rise Time tb N-Ch 5 P-Ch 5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 DTM4606BDY www.din-tek.jp N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 24 1.0 VGS = 10 V thru 6 V I D - Drain Current (A) I D - Drain Current (A) 18 VGS = 5 V 12 0.8 0.6 TC = 25 °C 0.4 6 TC = 125 °C 0.2 VGS = 4 V TC = - 55 °C 0.0 0 0 2 4 6 8 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 400 Ciss 300 0.06 C - Capacitance (pF) R DS(on) - On-Resistance () 350 0.08 VGS = 4.5 V VGS = 10 V 0.04 250 200 150 100 Coss 0.02 Crss 50 0.00 0 0 2 4 6 8 10 12 14 16 0 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.7 ID = 2.5 A ID = 6 A VDS = 7.5 V 1.5 8 VDS = 15 V 6 VDS = 22.5 V 4 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current and Gate Voltage 10 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 2 4 Qg - Total Gate Charge (nC) Gate Charge 4 5 6 0.7 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 DTM4606BDY www.din-tek.jp N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.25 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.20 0.15 0.10 TJ = 125 °C 0.05 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 40 Power (W) 0.0 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) V GS(th) Variance (V) ID = 250 µA 10 µs 100 µs 10 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 BVDSS Limited 0.01 0.1 1 1s 10 s 100 s, DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 5 DTM4606BDY www.din-tek.jp N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 I D - Drain Current (A) 6 Package Limited 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.6 0.3 0.7 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 DTM4606BDY www.din-tek.jp N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 7 DTM4606BDY www.din-tek.jp P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 2.0 VGS = 5 V VGS = 10 V thru 6 V I D - Drain Current (A) I D - Drain Current (A) 12 9 VGS = 4 V 6 1.5 1.0 TC = 25 °C 0.5 3 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0.0 0.5 1.0 1.5 0.0 1.0 2.0 1.5 VDS - Drain-to-Source Voltage (V) 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 600 0.15 450 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 4.5 V 0.10 VGS = 10 V Ciss 300 0.05 150 0.00 0 Coss Crss 0 3 6 9 12 15 0 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 ID = 2.5 A ID = 3.2 A VDS = 15 V VGS = 10 V 1.6 8 VDS = 7.5 V 6 VDS = 22.5 V 4 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 12 ID - Drain Current (A) 10 VGS = 4.5 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge 8 6 8 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 DTM4606BDY www.din-tek.jp P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 10 ID = 3.5 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 25 °C 1 TJ = 150 °C 0.1 TJ = - 50 °C 0.01 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.0 0.001 0.0 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 ID = 1 mA 0.2 0.0 -0.2 -0.4 - 50 Power (W) ID = 250 µA 30 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) VGS(th) Variance (V) 4 10 µs 100 µs 10 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 1s 10 s 100 s, DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 9 DTM4606BDY www.din-tek.jp P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 7 I D - Drain Current (A) 6 5 4 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.6 0.3 0.7 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 10 DTM4606BDY www.din-tek.jp P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 11 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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