AOD410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 8A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G G S G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Avalanche Current B C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V 6 IDM 20 A IAR 8 A EAR 10 mJ 25 2.1 W 1.33 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 12.5 PDSM TA=70°C Maximum Junction-to-Case C ±20 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 8 TC=100°C Pulsed Drain Current Maximum 30 RθJA RθJL Typ 20 46 5.3 °C Max 30 60 7 Units °C/W °C/W °C/W www.aosmd.com AOD410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 30 Max Units V VDS=24V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 10 ID(ON) Typ TJ=55°C VGS=10V, ID=8A 5 100 nA 1.8 3 V 48 65 76 100 105 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2A 75 gFS Forward Transconductance VDS=5V, ID=8A 6.2 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance µA mΩ mΩ S 1 V 4.3 A 288 pF 57 pF 39 pF 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.72 nC Qg(4.5V) Total Gate Charge 3.34 nC 0.76 nC 1.78 nC 3.7 ns Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 3.7 ns 15.6 ns 2.6 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 12.6 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 5.1 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature for 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 6V 4.5V 8 4V 6 VDS=5V ID(A) 15 ID (A) 10 5V 10V 8V 10 4 3.5V 5 125°C 25°C 2 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1.5 5 100 Normalized On-Resistance RDS(ON) (mΩ ) 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1.8 VGS=4.5V 80 4.5 ID=8A VGS=4.5V 1.6 70 VGS=10V 1.4 60 1.2 VGS=10V 50 40 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 175 1.0E+01 150 1.0E+00 ID=8A 100 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 2.5 2 90 125 2 1.0E-02 125°C 25°C 1.0E-03 75 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.20 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 1.0E-04 AOS 46 DOES NOT ASSUME ANY LIABILITY ARISING 50 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 5.3 TO IMPROVE 7 PRODUCT DESIGN, 1.0E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=8A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss Crss 100 0 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 8 100.0 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 30 TJ(Max)=150°C TA=25°C 20 Power (W) ID (Amps) 10µs 1ms RDS(ON) limited 10.0 100µs 10ms 0.1s 10 1s 1.0 TJ(Max)=150°C TA=25°C 10s 0 0.001 DC 0.1 0.1 Zθ JA Normalized Transient Thermal Resistance 10 1 10 VDS (Volts) Biased Safe Figure 9: Maximum Forward Operating Area (Note F) D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=60°C/W 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.20 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS 46 DOES NOTTASSUME ANY LIABILITY ARISING on Single Pulse OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 5.3 TO IMPROVE 7TPRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com AOD410 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com