WHXPCB AO4488

万和兴电子有限公司 www.whxpcb.com
AO4488
30V N-Channel MOSFET
General Description
Product Summary
The AO4488 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ESD protected and it is suitable for
use as a load switch or in PWM applications.
VDS (V) = 30V
ID = 20A
(VGS = 10V)
RDS(ON) < 4.6mΩ (VGS = 10V)
RDS(ON) < 6.4mΩ (VGS = 4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
Bottom View
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
10 Sec
Symbol
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
±20
V
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
ID
B
Steady State
20
15
17
12
IDM
80
Avalanche Current G
IAR
50
Repetitive avalanche energy L=0.3mH G
TA=25°C
Power Dissipation A
TA=70°C
EAR
375
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
PD
Symbol
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJL
mJ
3.1
1.7
2.0
1.1
-55 to 150
Typ
31
59
16
A
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4488
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
ID = 250µA, VGS = 0V
Min
Typ
30
35.5
VDS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±16V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.0
On state drain current
VGS = 10V, VDS = 5V
80
TJ = 55°C
Static Drain-Source On-Resistance
V
5
TJ=125°C
1.7
2.5
3.8
4.6
5.3
6.5
5.2
6.4
Forward Transconductance
VDS = 5V, ID = 20A
72
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
0.69
5450
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=20A
V
A
VGS = 4.5V, ID = 18A
gFS
µA
±10
VGS = 10V, ID = 20A
RDS(ON)
Units
1
IDSS
ID(ON)
Max
mΩ
S
1
V
3
A
6800
pF
760
pF
540
pF
1
1.5
Ω
84
112
nC
42
56
nC
12
nC
Gate Drain Charge
21
nC
Turn-On DelayTime
13
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/µs
42
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
9.8
ns
49
ns
16
ns
56
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
0
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev6: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4488
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
80
10V
70
4V
60
3.5V
125°C
20
ID(A)
50
ID (A)
VDS= 5V
25
4.5V
40
30
15
25°C
10
20
5
10
-40°C
VGS= 3V
0
0
0
1
2
3
4
5
0
1
6
Normalized On-Resistance
RDS(ON) (mΩ )
3
4
1.6
5.5
VGS= 4.5V
5
4.5
VGS= 10V
4
3.5
3
VGS= 10V
ID= 20A
1.4
1.2
VGS= 4.5V
ID= 18A
1.0
0.8
0.6
0
4
16
20
IF12
=-6.5A, dI/dt=100A/µs
8
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
1E+01
14
ID= 20A
1E+00
12
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
1E-01
10
IS (A)
125°C
1E-02
8
25°C
125°CAND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
THIS PRODUCT HAS BEEN DESIGNED
1E-03
6
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF4SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
THE RIGHT 25°C
TO IMPROVE PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
-40°C
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
-40°C
1E-05
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AO4488
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10
VDS= 15V
ID= 20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
4000
Coss
2
2000
0
0
Crss
0
10
20
30
40
50
60
70
80
90
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
1000
1ms
1
10ms
100ms
s10s
TJ(Max)=150°C
TA=25°C
0.01
0.01
0.1
Power (W)
100µs
10
0.1
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10
1
100
10
DC
1
1E-04 0.001 0.01
I =-6.5A,
dI/dt=100A/µs
10
100
F
1
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=59°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
5
VDS (Volts)
Figure 8: Capacitance Characteristics
100
ID (Amps)
Ciss
6000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4488
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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