AO6402A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO6402A and AO6402AL are electrically identical. -RoHS Compliant -AO6402AL is Halogen Free VDS (V) = 30V ID = 7A RDS(ON) < 27mΩ RDS(ON) < 40mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.5V) TSOP-6 D Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Pulsed Drain Current TA=70°C ID B Junction and Storage Temperature Range Maximum Junction-to-Lead C A Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t ≤ 10s Steady-State Steady-State A 30 -55 to 150 Symbol A V 2.0 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient ±20 5.6 IDM TA=25°C Power Dissipation Units V 7.0 TA=25°C Continuous Drain Current A,F Maximum 30 RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO6402A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=7A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current TJ=55°C VGS=10V, ID=7A TJ=125°C VGS=4.5V, ID=5.6A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge 5 1.6 100 nA 2.5 V 22.5 27 32 39 32.5 40 VGS=10V, VDS=15V, ID=7A mΩ mΩ S 1 V 2.5 A 820 pF 118 pF 85 VGS=0V, VDS=0V, f=1MHz µA A 621 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Units 30 VDS=30V, VGS=0V IDSS Coss Max pF 0.8 1.5 Ω 11.3 17 nC 5.7 8 nC 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nC nC 6.5 ns VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω 3.1 5 ns 15.1 23 ns 2.7 5 ns trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs 15.5 21 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 7.1 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: Aug. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 6V 50 VDS=5V 16 12 4.5V ID(A) ID (A) 40 30 8 20 125°C VGS=3.5V 4 10 0 25°C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 45 1.6 Normalized On-Resistance 40 VGS=4.5V 35 RDS(ON) (mΩ ) 2.5 30 25 20 15 VGS=10V 10 VGS=10V Id=7A 1.4 VGS=4.5V Id=5.6A 1.2 1 0.8 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7A 1.0E+00 50 125°C IS (A) RDS(ON) (mΩ ) 1.0E-01 40 125°C 1.0E-02 25°C AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT 25°CNOTICE. 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6402A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 VDS=15V ID=7A Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 2 200 0 0 0 2 4 6 8 10 12 Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 30 10µs TJ(Max)=150°C TA=25°C RDS(ON) limited 100µ 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 0.1s DC Zθ JA Normalized Transient Thermal Resistance 20 10 10s 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Power (W) ID (Amps) 10.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS NOT ASSUME ANY LIABILITY ARISING D 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS PDOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com