AO4496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 19.5mΩ (VGS = 10V) (VGS = 4.5V) RDS(ON) < 26mΩ UIS TESTED! Rg, Ciss, Coss, Crss Tested -RoHS Compliant -AO4496L is Halogen Free D S D S D S D G D G S SOIC-8 Absolute Maximum Ratings TJ=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A B Avalanche Current G Repetitive avalanche energy L=0.1mH Power Dissipation A G TA=25°C ±20 V ID IDM 7.5 IAR 17 EAR 14 Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. mJ 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A 50 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 10 TA=70°C Pulsed Drain Current 30 Maximum RθJA RθJL -55 to 150 Typ 31 59 16 Max 40 75 24 °C Units °C/W °C/W °C/W www.aosmd.com AO4496 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C 5 Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.4 ID(ON) On state drain current VGS = 10V, VDS = 5V 50 ±100 VGS = 10V, ID = 10A TJ=125°C VDS = 5V, ID = 10A 30 0.76 Output Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 550 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A 3 µA nA V A 26 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 19.5 29 Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current Crss 16 21 VSD Coss 2.5 24 Forward Transconductance IS 1.8 VGS = 4.5V, ID = 7.5A gFS Units V VDS = 30V, VGS = 0V Static Drain-Source On-Resistance Max 30 IGSS RDS(ON) Typ mΩ S 1 V 3 A 715 pF 110 pF 55 pF 4 5.5 Ω 9.8 13 nC 4.6 6.1 nC 1.8 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, RL= 1.5Ω, RGEN=3Ω 3.2 ns 24 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 14 6 ns 29 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev2: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS= 5V 4.5V 4V 40 40 30 ID(A) ID (A) 30 3.5V 20 20 10 125°C 10 VGS= 3V 25°C 0 0 0 1 2 3 4 5 1 26 Normalized On-Resistance RDS(ON) (mΩ) 3 4 5 1.8 24 VGS= 4.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID= 7.5A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 50 ID= 10A 45 1E+01 1E+00 40 1E-01 35 IS (A) RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 125°C 30 1E-02 125°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL 25 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 20 25°C 25°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS 15 AND RELIABILITY WITHOUT NOTICE. 1E-06 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 10A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 200 Coss Crss 0 0 0 2 4 6 8 0 10 5 10 15 20 TJ(Max)=150°C TA=25°C 10µs 1ms RDS(ON) limited 1 10ms 100ms 10s 0.1 TJ(Max)=150°C TA=25°C 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 1 0.0001 IF=-6.5A, dI/dt=100A/µs 1 10 100 DC 0.01 0.1 Power (W) 100µs 10 ID (Amps) 30 1000 100 ZθJA Normalized Transient Thermal Resistance 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4496 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com