AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD403 is Pb-free (meets ROHS & Sony 259 specifications). AOD403L is a Green Product ordering option. AOD403 and AOD403L are electrically identical. VDS (V) = -30V ID = -85A (VGS = -20V) RDS(ON) < 6mΩ (VGS = -20V) RDS(ON) < 7.6mΩ (VGS = -10V) TO-252 D-PAK D Top View Drain Connected to Tab G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B A V Junction and Storage Temperature Range -200 IAR -30 A 120 mJ EAR 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A -65 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case ±25 ID IDM PD TC=100°C TA=25°C Power Dissipation Units V -85 TA=100°C B Repetitive avalanche energy L=0.1mH Maximum -30 RθJA RθJL Typ 13 39 0.56 °C Max 20 50 1.5 Units °C/W °C/W °C/W AOD403 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 VDS=-24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 On state drain current VGS=-10V, VDS=-5V -60 RDS(ON) Static Drain-Source On-Resistance VGS=-20V, ID=-20A Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr V A 6.3 7.6 VDS=-5V, ID=-20A 44 -0.72 4360 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A Gate Drain Charge tD(on) -3.5 VGS=-10V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 6 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance -2.6 µA ±100 8.5 Forward Transconductance Units V 7.1 VSD Output Capacitance -1 5.1 TJ=125°C gFS Crss -0.01 -5 VGS(th) Coss Max TJ=55°C ID(ON) IS Typ mΩ mΩ S -1 V -104 A 5300 pF 1050 pF 762 pF 2.5 3 Ω 93.2 120 nC 18 nC 29.2 nC 18 25 ns 30 45 ns 51 75 ns 35 50 ns IF=-20A, dI/dt=100A/µs 39.5 48 Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 30.8 37 ns nC VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 4: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 -10V -6V VDS=-5V 50 -5V 60 40 -4.5V -ID(A) -ID (A) 80 40 30 125°C 20 -4V 20 10 VGS=-2V 0 0 1 2 3 4 25°C 0 5 2 10 Normalized On-Resistance RDS(ON) (mΩ) 3 3.5 4 4.5 5 1.6 8 VGS=-10V 6 4 VGS=-20V 2 0 0 10 20 30 40 50 ID=-20A VGS=-10V 1.2 1 0.8 60 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -15 1.0E+02 24 20 VGS=-20V 1.4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -12.8 1.0E+01 ID=-20A 1.0E+00 16 12 8 -IS (A) RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25°C 125°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 4 1.0E-05 COMPONENTS LIFE SUPPORT DEVICES OR SYSTEMS ARE20NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 4 IN25°C 8 12 16 1.0E-06 OUT OF SUCH APPLICATIONS OR OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, -VUSES GS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 FUNCTIONS AND RELIABILITY WITHOUT Figure 5: On-Resistance vs.NOTICE. Gate-Source Voltage -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 Capacitance (pF) 8 -VGS (Volts) 7000 VDS=-15V ID=-20A 6 4 2 5000 Ciss 4000 3000 2000 Coss 1000 0 0 10 20 30 40 50 60 70 80 90 Crss 0 100 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 100 100 1ms 100µs 10µs 10ms 0.1s 10 1s TJ(Max)=150°C TA=25°C 1 60 40 20 10s 0 0.01 DC 0.1 0.1 1 30 TJ(Max)=150°C TA=25°C 80 Power (W) RDS(ON) limited 25 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 -ID (Amps) 5 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=50°C/W -12.8 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Ton ASSUME ANY LIABILITY ARISING COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT T Single PulseOF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES 0.001 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd.