AOSMD AON4413

AON4413
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4413 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard product AON4413 is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = -30V
(VGS = -10V)
ID = -6.5A
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 60mΩ (VGS = -6V)
D
D
D
D
D
D
D
G
S
G
DFN 3x2
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
VDS
Drain-Source Voltage
-30
VGS
±20
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
TA=70°C
Pulsed Drain Current
Power Dissipation
-6.5
A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
3.1
1.6
2.0
1.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
-3.7
A
-25
PD
TA=70°C
V
-4.7
-5.3
ID
IDM
B
Units
V
RθJA
RθJL
-55 to 150
Typ
34
66
20
Max
40
80
25
W
°C
Units
°C/W
°C/W
°C/W
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AON4413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-30
-1
TJ = 55°C
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.5
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-25
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10V, ID = -6.5A
TJ=125°C
VGS = -6V, ID = -5.3A
Forward Transconductance
VSD
IS = -1A,VGS = 0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS = -5V, ID = -6.5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
-2
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6.5A
±100
nA
-2.5
V
A
38
46
54
65
48
60
mΩ
-1
V
-3
A
830
pF
mΩ
11
0.77
668
VGS=0V, VDS=-15V, f=1MHz
Units
µA
-5
VGS(th)
gFS
Max
V
VDS = -30V, VGS = 0V
IGSS
IS
Typ
S
126
pF
92
pF
9
Ω
12.7
17
nC
6.4
8.5
nC
6
Qgs
Gate Source Charge
2
nC
Qgd
Gate Drain Charge
4
nC
tD(on)
Turn-On DelayTime
7.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-6.5A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
15
VGS=-10V, VDS=-15V, RL=2.3Ω,
RGEN=3Ω
6.8
ns
20
ns
10
ns
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
-5V
-10V
-4.5V
VDS=-5V
8
20
-4V
125°C
6
15
-ID(A)
-ID (A)
-6V
-3.5V
10
25°C
4
5
2
-40°C
VGS=-2.5V
0
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
80
1.6
VGS=-6V
60
40
VGS=-10V
Normalized On-Resistance
RDS(ON) (mΩ)
2
VGS=-10V
ID=-6.5A
1.4
VGS=-6V
ID=-5.3A
1.2
1.0
0.8
20
0
2
4
IF6=-6.5A, dI/dt=100A/µs
8
10
0.6
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
160
140
1E+00
ID=-6.5A
120
1E-01
-IS (A)
RDS(ON) (mΩ)
0
100
125°C
1E-02
125°C
80
1E-03
25°C FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
60
1E-04
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES
NOT ASSUME ANY LIABILITY ARISING
25°C
-40°C
-40°CDESIGN,
OUT OF SUCH
APPLICATIONS
OR
USES
OF
ITS
PRODUCTS.
AOS
RESERVES
THE
RIGHT
TO
IMPROVE
PRODUCT
40
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
Ciss
Capacitance (pF)
-VGS (Volts)
1000
VDS=-15V
ID=-6.5A
8
6
4
800
600
400
Coss
2
200
Crss
0
0
0
3
6
9
12
15
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
1ms
10ms
100mss
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
Power (W)
100µs
1
0.1
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10
-ID (Amps)
10
1
0.00001
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=66°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
10s
IF=-6.5A,
dI/dt=100A/µs
10
100
1
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
T
Single
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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