2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)60 V (--)50 V (--)6 V Collector Current VEBO IC (--)4 A Collector Current (Pulse) ICP (--)6 A 1.5 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 10 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7516A-002 • Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag 8.0 4.0 3.6 3.3 1.0 11.0 Marking B1143 D1683 RANK LOT No. RANK LOT No. 1.5 7.5 3.0 1.4 1.0 2SB1143S 2SB1143T 2SD1683S 2SD1683T 3.0 1.6 0.8 0.8 0.75 15.5 0.7 Electrical Connection 2 3 1.7 1 2 1 : Emitter 2 : Collector 3 : Base 3 2.4 4.8 2 3 SANYO : TO-126ML 2SB1143 1 2SD1683 1 http://www.sanyosemi.com/en/network/ 90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/7 2SB1143/2SD1683 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A hFE1 VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)3A hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 100* max Unit (--)1 μA (--)1 μA 560* 40 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA MHz (39)25 IC=(--)2A, IB=(--)100mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ VCE=(--)10V, IC=(--)50mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings min V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. pF (--350)190 (--700)500 (--)0.94 (--)1.2 mV V (--)60 V (--)50 V (--)6 V (70)70 ns (450)650 ns (30)35 ns * : The 2SB1143/2SD1683 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 25Ω 50Ω + 100μF + 470μF VBE= --5V VCC=25V IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.) Ordering Information Package Shipping 2SB1143S Device TO-126ML 200pcs./bag 2SB1143T TO-126ML 200pcs./bag 2SD1683S TO-126ML 200pcs./bag 2SD1683T TO-126ML 200pcs./bag memo Pb Free No.2063-2/7 2SB1143/2SD1683 IC -- VCE --5 IC -- VCE 5 2SB1143 2SD1683 A 100m 80mA 60mA mA --4 mA --50mA --3 --20mA --2 --10mA --1 0 --5mA IB=0mA 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V mA A 20mA 2 10mA 5mA 1 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09048 IC -- VCE 2.0 2SD1683 8mA 7mA --10mA --1.6 40mA 3 ITR09047 2SB1143 --12m --14 4 0 --2.0 IC -- VCE --2.0 Collector Current, IC -- A Collector Current, IC -- A --100 Collector Current, IC -- A Collector Current, IC -- A 0 --20 --8mA --6mA --1.2 --4mA --0.8 --2mA --0.4 1.6 6mA 5mA 1.2 4mA 0.8 3mA 2mA 0.4 1mA 0 IB=0mA 0 --4 --8 --12 --16 0 --20 IB=0mA 0 IC -- VBE --2.4 --1.6 0 --0.2 --0.4 --0.6 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 7 2.4 1.6 5 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09053 1.4 ITR09052 Ta=75°C 25°C --25°C 7 5 2 2 1.2 2SD1683 VCE=2V 100 2 7 --0.1 1.0 2 3 5 0.8 hFE -- IC 3 3 3 0.6 5 7 2 0.4 Base-to-Emitter Voltage, VBE -- V 7 Ta=75°C 25°C --25°C 7 --0.01 0.2 1000 100 10 0 ITR09051 DC Current Gain, hFE DC Current Gain, hFE 5 2 3.2 0 --1.4 2SB1143 VCE= --2V 3 2SD1683 VCE=2V 0.8 --0.8 20 Ta= 75 25° °C C --25 °C Collector Current, IC -- A --3.2 0 16 4.0 Ta= 75 25° °C --25 C °C Collector Current, IC -- A --4.0 12 IC -- VBE 4.8 2SB1143 VCE= --2V --0.8 8 Collector-to-Emitter Voltage, VCE -- V ITR09050 Collector-to-Emitter Voltage, VCE -- V ITR09049 --4.8 4 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09054 No.2063-3/7 2SB1143/2SD1683 f T -- IC 1000 5 3 2SD 168 2 3 2SB 1143 100 7 5 3 2 10 0.01 For PNP, the minus sign is omitted. 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --1000 7 5 3 2 --100 25°C 7 5 Ta= 3 --25°C 75°C 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 For PNP, the minus sign is omitted. 2 3 5 2 10 3 2 25°C 7 75°C 5 7 100 ITR09056 2SD1642 IC / IB=20 3 2 1000 7 5 3 2 100 7 5 25°C Ta=75°C 3 --25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A VBE(sat) -- IC 2 3 5 ITR09058 2SD1683 IC / IB=20 7 3 Ta= --25°C 7 VCE(sat) -- IC 10 5 5 2 10 5 2SB1143 IC / IB=20 --1.0 3 ITR09057 VBE(sat) -- IC --10 2SB1 143 2SD 168 3 5 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 100 5 2SB1143 IC / IB=20 3 2 10 1.0 5 7 10 ITR09055 VCE(sat) -- IC 5 2SB1143 / 2SD1683 f=1MHz 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 7 Cob -- VCB 5 2SB1143 / 2SD1683 VCE=10V 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 2 3 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 0.1 5 ms DC DC s 0m era 1.0 7 5 tio nT c= 25 °C op era tio nT a= 3 25 °C 2 0.1 7 5 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 5 7 1.0 2 3 5 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09061 7 0.1 2 3 5 7 1.0 2 3 5 ITR09060 PC -- Ta 12 op 2 2 Collector Current, IC -- A 2SB1143 / 2SD1683 1m s 10 IC=4A 3 10 7 0.01 ITR09059 Collector Dissipation, PC -- W ICP=6A 7 5 Collector Current, IC -- A 3 ASO 10 3 2 2 2SB1143 / 2SD1683 10 8 6 4 2 1.5 0 No heat si nk 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09062 No.2063-4/7 2SB1143/2SD1683 Bag Packing Specification 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T No.2063-5/7 2SB1143/2SD1683 Outline Drawing 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T Mass (g) Unit 0.97 mm * For reference No.2063-6/7 2SB1143/2SD1683 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.2063-7/7